Eliana Kaminska
Eliana Kaminska
Institute of Electron Technology, Institute of High Pressure Physics
Email verificata su unipress.waw.pl
Titolo
Citata da
Citata da
Anno
Determination of the effective mass of GaN from infrared reflectivity and Hall effect
P Perlin, E Litwin‐Staszewska, B Suchanek, W Knap, J Camassel, T Suski, ...
Applied physics letters 68 (8), 1114-1116, 1996
1881996
Electrical and optical properties of NiO films deposited by magnetron sputtering.
M Guziewicz, J Grochowski, M Borysiewicz, E Kaminska, JZ Domagala, ...
Optica Applicata 41 (2), 2011
982011
Theory of doping properties of Ag acceptors in ZnO
O Volnianska, P Boguslawski, J Kaczkowski, P Jakubas, A Jezierski, ...
Physical Review B 80 (24), 245212, 2009
832009
Interband optical absorption in free standing layer of
P Perlin, P Wiśniewski, C Skierbiszewski, T Suski, E Kamińska, ...
Applied Physics Letters 76 (10), 1279-1281, 2000
822000
Third-order nonlinear optical properties of thin sputtered gold films
E Xenogiannopoulou, P Aloukos, S Couris, E Kaminska, A Piotrowska, ...
Optics communications 275 (1), 217-222, 2007
702007
Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing
E Litwin-Staszewska, T Suski, R Piotrzkowski, I Grzegory, M Bockowski, ...
Journal of Applied Physics 89 (12), 7960-7965, 2001
612001
Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2
E Kaminska, A Piotrowska, J Kossut, A Barcz, R Butkute, W Dobrowolski, ...
Solid state communications 135 (1-2), 11-15, 2005
592005
Planar optical waveguides based on thin ZnO layers
P Struk, T Pustelny, K Gut, K Golaszewska, E Kaminska, M Ekielski, ...
Acta Physica Polonica-Series A General Physics 116 (3), 414, 2009
442009
Magneto-optical properties of the diluted magnetic semiconductor p-type ZnMnO
E Przeździecka, E Kamińska, M Kiecana, M Sawicki, W Pacuski, J Kossut
Solid state communications 139 (10), 541-544, 2006
362006
Optical characterizations of ZnO, SnO 2, and TiO 2 thin films for butane detection
T Mazingue, L Escoubas, L Spalluto, F Flory, P Jacquouton, A Perrone, ...
Applied optics 45 (7), 1425-1435, 2006
352006
p‐type conducting ZnO: fabrication and characterisation
E Kaminska, A Piotrowska, J Kossut, R Butkutė, W Dobrowolski, ...
physica status solidi (c) 2 (3), 1119-1124, 2005
332005
Ohmic contacts to III–V compound semiconductors
A Piotrowska, E Kaminska
Thin Solid Films 193, 511-527, 1990
331990
Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas
AV Antonov, VI Gavrilenko, EV Demidov, SV Morozov, AA Dubinov, ...
Physics of the Solid State 46 (1), 146-149, 2004
322004
Ni-based ohmic contacts to n-type 4H-SiC: the formation mechanism and thermal stability
AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz, R Ratajczak, ...
Advances in Condensed Matter Physics 2016, 2016
292016
Ohmic contact to n-GaN with TiN diffusion barrier
E Kamińska, A Piotrowska, M Guziewicz, S Kasjaniuk, A Barcz, ...
MRS Online Proceedings Library Archive 449, 1996
291996
Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC
N Kwietniewski, M Sochacki, J Szmidt, M Guziewicz, E Kaminska, ...
Applied surface science 254 (24), 8106-8110, 2008
282008
Surface properties of nanostructured, porous ZnO thin films prepared by direct current reactive magnetron sputtering
M Kwoka, B Lyson-Sypien, A Kulis, M Maslyk, MA Borysiewicz, ...
Materials 11 (1), 131, 2018
222018
Hydrogen sensing properties of thin NiO films deposited by RF sputtering
M Guziewicz, P Klata, J Grochowski, K Golaszewska, E Kaminska, ...
Procedia Engineering 47, 746-749, 2012
212012
Ag and N acceptors in ZnO: An ab initio study of acceptor pairing, doping efficiency, and the role of hydrogen
O Volnianska, P Boguslawski, E Kaminska
Physical Review B 85 (16), 165212, 2012
202012
Amorphous Ta–Si–N diffusion barriers on GaAs
A Kuchuk, E Kaminska, A Piotrowska, K Golaszewska, E Dynowska, ...
Thin Solid Films 459 (1-2), 292-296, 2004
202004
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
Articoli 1–20