Fabio Carta
Fabio Carta
IBM - Research Staff Member
Email verificata su us.ibm.com
TitoloCitata daAnno
Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures
H Hlaing, CH Kim, F Carta, CY Nam, RA Barton, N Petrone, J Hone, ...
Nano letters 15 (1), 69-74, 2015
682015
Templating and charge injection from copper electrodes into solution-processed organic field-effect transistors
CH Kim, H Hlaing, F Carta, Y Bonnassieux, G Horowitz, I Kymissis
ACS applied materials & interfaces 5 (9), 3716-3721, 2013
262013
ALD-based confined PCM with a metallic liner toward unlimited endurance
W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016
232016
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017
182017
Bimorph actuator with monolithically integrated CMOS OFET control
F Carta, YJ Hsu, J Sarik, I Kymissis
Organic Electronics 14 (1), 286-290, 2013
112013
Sequential lateral solidification of silicon thin films on cu BEOL-integrated wafers for monolithic 3-D integration
F Carta, SM Gates, AB Limanov, JS Im, DC Edelstein, I Kymissis
IEEE Transactions on Electron Devices 62 (11), 3887-3891, 2015
82015
Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning
W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ...
2019 Symposium on VLSI Technology, T66-T67, 2019
42019
A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory
WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ...
IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018
42018
Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration
F Carta, SM Gates, AB Limanov, H Hlaing, JS Im, DC Edelstein, I Kymissis
Applied Physics Letters 105 (24), 242904, 2014
42014
High endurance self-heating OTS-PCM pillar cell for 3D stackable memory
CW Yeh, WC Chien, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ...
2018 IEEE Symposium on VLSI Technology, 205-206, 2018
32018
Ofet including pvdf-trfe-cfe dielectric
Z Jia, N Pervez, F Carta, I Kymissis
US Patent 9,099,661, 2015
22015
Reliability benefits of a metallic liner in confined PCM
W Kim, S Kim, R Bruce, F Carta, G Fraczak, A Ray, C Lam, M BrightSky, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 5-1-6D. 5-5, 2018
12018
Lateral bipolar transistor
F Carta, DC Edelstein, SM Gates, B Hekmatshoartabari, TH Ning
US Patent 9,425,298, 2016
12016
Excimer Laser Crystallization of Silicon Thin-Films for Monolithic 3D Integration
F Carta
Columbia University, 2015
12015
Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium
F Carta, T Masuda, GWY Fraczak, R Bruce, NE Sosa, MJ BrightSky
US Patent App. 15/976,443, 2019
2019
Crystallized silicon vertical diode on beol for access device for confined pcm arrays
F Carta, CH Lam, MJ BrightSky, B Hekmatshoartabari
US Patent App. 16/414,406, 2019
2019
Crystallized silicon vertical diode on beol for access device for confined pcm arrays
F Carta, CH Lam, MJ BrightSky, B Hekmatshoartabari
US Patent App. 15/938,625, 2019
2019
3D cross-point phase-change memory for storage-class memory
HY Cheng, F Carta, WC Chien, HL Lung, MJ BrightSky
Journal of Physics D: Applied Physics 52 (47), 473002, 2019
2019
Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays
F Carta, CH Lam, MJ BrightSky, B Hekmatshoartabari
US Patent 10,374,103, 2019
2019
Comprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM Applications
WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ...
2019 Symposium on VLSI Technology, T60-T61, 2019
2019
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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