Room-temperature high spin–orbit torque due to quantum confinement in sputtered Bix (1–x ) films M Dc, R Grassi, JY Chen, M Jamali, D Reifsnyder Hickey, D Zhang, ...
Nature materials 17 (9), 800-807, 2018
459 2018 Multilayer black phosphorus as a versatile mid-infrared electro-optic material C Lin, R Grassi, T Low, AS Helmy
Nano letters 16 (3), 1683-1689, 2016
197 2016 Midinfrared electro-optic modulation in few-layer black phosphorus R Peng, K Khaliji, N Youngblood, R Grassi, T Low, M Li
Nano letters 17 (10), 6315-6320, 2017
126 2017 Graphene-edge dielectrophoretic tweezers for trapping of biomolecules A Barik, Y Zhang, R Grassi, BP Nadappuram, JB Edel, T Low, SJ Koester, ...
Nature communications 8 (1), 1867, 2017
89 2017 Scaling of the energy gap in pattern-hydrogenated graphene R Grassi, T Low, M Lundstrom
Nano letters 11 (11), 4574-4578, 2011
58 2011 Optimization of n- and p-type TFETs Integrated on the Same E Baravelli, E Gnani, R Grassi, A Gnudi, S Reggiani, G Baccarani
IEEE transactions on electron devices 61 (1), 178-185, 2013
55 2013 Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures C Choi, J Huang, HC Cheng, H Kim, AK Vinod, SH Bae, VO Özçelik, ...
npj 2D Materials and Applications 2 (1), 30, 2018
54 2018 Graphene-base heterojunction transistor: An attractive device for terahertz operation V Di Lecce, R Grassi, A Gnudi, E Gnani, S Reggiani, G Baccarani
IEEE transactions on electron devices 60 (12), 4263-4268, 2013
54 2013 Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs R Grassi, S Poli, E Gnani, A Gnudi, S Reggiani, G Baccarani
Solid-state electronics 53 (4), 462-467, 2009
48 2009 Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode T Li, D Mao, NW Petrone, R Grassi, H Hu, Y Ding, Z Huang, GQ Lo, ...
npj 2D Materials and Applications 2 (1), 36, 2018
36 2018 Contact-induced negative differential resistance in short-channel graphene FETs R Grassi, T Low, A Gnudi, G Baccarani
IEEE transactions on electron devices 60 (1), 140-146, 2012
33 2012 Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells G Zerveas, E Caruso, G Baccarani, L Czornomaz, N Daix, D Esseni, ...
Solid-State Electronics 115, 92-102, 2016
30 2016 High-performance black phosphorus MOSFETs using crystal orientation control and contact engineering N Haratipour, S Namgung, R Grassi, T Low, SH Oh, SJ Koester
IEEE Electron Device Letters 38 (5), 685-688, 2017
29 2017 Anomalous temperature dependence in metal–black phosphorus contact X Li, R Grassi, S Li, T Li, X Xiong, T Low, Y Wu
Nano letters 18 (1), 26-31, 2018
27 2018 Graphene base transistors: A simulation study of DC and small-signal operation V Di Lecce, R Grassi, A Gnudi, E Gnani, S Reggiani, G Baccarani
IEEE transactions on electron devices 60 (10), 3584-3591, 2013
27 2013 Electrical control of excitons in van der Waals heterostructures with type-II band alignment A Chaves, JG Azadani, VO Özçelik, R Grassi, T Low
Physical Review B 98 (12), 121302, 2018
26 2018 Mode space approach for tight binding transport simulation in graphene nanoribbon FETs R Grassi, A Gnudi, E Gnani, S Reggiani, G Baccarani
IEEE transactions on nanotechnology 10 (3), 371-378, 2010
25 2010 Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains R Grassi, A Gnudi, V Di Lecce, E Gnani, S Reggiani, G Baccarani
IEEE Transactions on electron devices 61 (2), 617-624, 2013
20 2013 Spatial/temporal photocurrent and electronic transport in monolayer molybdenum disulfide grown by chemical vapor deposition Z Yang, R Grassi, M Freitag, YH Lee, T Low, W Zhu
Applied Physics Letters 108 (8), 2016
16 2016 Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback R Grassi, A Gnudi, V Di Lecce, E Gnani, S Reggiani, G Baccarani
Solid-state electronics 100, 54-60, 2014
16 2014 