Yi Song
Citata da
Citata da
Mobility enhancement technology for scaling of CMOS devices: overview and status
Y Song, H Zhou, Q Xu, J Luo, H Yin, J Yan, H Zhong
Journal of electronic materials 40 (7), 1584-1612, 2011
Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures
SH Kim, PK Mohseni, Y Song, T Ishihara, X Li
Nano letters 15 (1), 641-648, 2015
Field effect transistor structure comprising a stack of vertically separated channel nanowires
X Li, Y Song
US Patent 9,224,809, 2015
III-V junctionless gate-all-around nanowire MOSFETs for high linearity low power applications
Y Song, C Zhang, R Dowdy, K Chabak, PK Mohseni, W Choi, X Li
IEEE Electron Device Letters 35 (3), 324-326, 2014
Method for manufacturing suspended fin and gate-all-around field effect transistor
H Zhou, Y Song, Q Xu
US Patent 8,361,869, 2013
High-performance silicon nanowire gate-all-around nMOSFETs fabricated on bulk substrate using CMOS-compatible process
Y Song, H Zhou, Q Xu, J Niu, J Yan, C Zhao, H Zhong
IEEE electron device letters 31 (12), 1377-1379, 2010
Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching
L Kong, Y Song, JD Kim, L Yu, D Wasserman, WK Chim, SY Chiam, X Li
ACS nano 11 (10), 10193-10205, 2017
Ultra-high aspect ratio InP junctionless FinFETs by a novel wet etching method
Y Song, PK Mohseni, SH Kim, JC Shin, T Ishihara, I Adesida, X Li
IEEE Electron Device Letters 37 (8), 970-973, 2016
Performance breakthrough in gate-all-around nanowire n-and p-type MOSFETs fabricated on bulk silicon substrate
Y Song, Q Xu, J Luo, H Zhou, J Niu, Q Liang, C Zhao
IEEE transactions on electron devices 59 (7), 1885-1890, 2012
Fabrication of Bulk-Si FinFET using CMOS compatible process
H Zhou, Y Song, Q Xu, Y Li, H Yin
Microelectronic engineering 94, 26-28, 2012
Scaling Junctionless Multigate Field-Effect Transistors by Step-doping
XL Yi Song
Applied Physics Letters 108, 223506, 2014
Source/drain technologies for the scaling of nanoscale CMOS device
Y Song, H Zhou, Q Xu
Solid State Sciences 13 (2), 294-305, 2011
Vertically stacked individually tunable nanowire field effect transistors for low power operation with ultrahigh radio frequency linearity
Y Song, J Luo, X Li
Applied Physics Letters 101 (9), 093509, 2012
Fringe-induced barrier lowering (FIBL) included sub-threshold swing model for double-gate MOSFETs
P Liang, J Jiang, Y Song
Journal of Physics D: Applied Physics 41 (21), 215109, 2008
Design and optimization considerations for bulk gate-all-around nanowire MOSFETs
Y Song, Q Xu, H Zhou, X Cai
Semiconductor science and technology 24 (10), 105006, 2009
Method for manufacturing a MOSFET with a surrounding gate of bulk Si
Y Song, H Zhou, Q Xu
US Patent 7,960,235, 2011
InP FinFETs with damage-free and record high-aspect-ratio (45∶ 1) fins fabricated by metal-assisted chemical etching
Y Song, PK Mohseni, SH Kim, JC Shin, C Zhang, K Chabak, X Li
2015 73rd Annual Device Research Conference (DRC), 253-254, 2015
Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques
Y Song
University of Illinois at Urbana-Champaign, 2016
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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