Giuseppe Moschetti
Giuseppe Moschetti
RF & Microwave Specialist, Qamcom Research and Technology AB
Email verificata su qamcom.se
Titolo
Citata da
Citata da
Anno
A 183 GHz metamorphic HEMT low-noise amplifier with 3.5 dB noise figure
G Moschetti, A Leuther, H Maler, B Aja, M Rsch, M Schlechtweg, ...
IEEE Microwave and Wireless Components Letters 25 (9), 618-620, 2015
362015
Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications
G Moschetti, N Wadefalk, P Nilsson, M Abbasi, L Desplanque, X Wallart, ...
IEEE microwave and wireless components letters 22 (3), 144-146, 2012
252012
Anisotropic transport properties in InAs/AlSb heterostructures
G Moschetti, H Zhao, P Nilsson, S Wang, A Kalabukhov, G Dambrine, ...
Applied Physics Letters 97 (24), 243510, 2010
232010
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
BG Vasallo, H Rodilla, T Gonzlez, G Moschetti, J Grahn, J Mateos
Journal of Applied Physics 108 (9), 094505, 2010
232010
Sb-HEMT: toward 100-mV cryogenic electronics
A Noudeviwa, Y Roelens, F Danneville, A Olivier, N Wichmann, ...
IEEE transactions on electron devices 57 (8), 1903-1909, 2010
222010
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-and Q-band LNAs
E Cha, G Moschetti, N Wadefalk, P Nilsson, S Bevilacqua, ...
IEEE Transactions on Microwave Theory and Techniques 65 (12), 5171-5180, 2017
202017
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
G Moschetti, N Wadefalk, P Nilsson, Y Roelens, A Noudeviwa, ...
Solid-State Electronics 64 (1), 47-53, 2011
192011
Planar InAs/AlSb HEMTs with ion-implanted isolation
G Moschetti, P Nilsson, A Hallen, L Desplanque, X Wallart, J Grahn
IEEE electron device letters 33 (4), 510-512, 2012
162012
AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
L Desplanque, S El Kazzi, JL Codron, Y Wang, P Ruterana, G Moschetti, ...
Applied Physics Letters 100 (26), 262103, 2012
152012
0.3–14 and 16–28 GHz wide-bandwidth cryogenic MMIC low-noise amplifiers
E Cha, N Wadefalk, P Nilsson, J Schleeh, G Moschetti, A Pourkabirian, ...
IEEE Transactions on Microwave Theory and Techniques 66 (11), 4860-4869, 2018
122018
Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
BG Vasallo, H Rodilla, T Gonzlez, G Moschetti, J Grahn, J Mateos
Semiconductor Science and Technology 27 (6), 065018, 2012
122012
Stability investigation of large gate-width metamorphic high electron-mobility transistors at cryogenic temperature
G Moschetti, F Thome, M Ohlrogge, J Goliasch, F Schfer, B Aja, ...
IEEE Transactions on Microwave Theory and Techniques 64 (10), 3139-3150, 2016
112016
Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
H Rodilla, T Gonzlez, G Moschetti, J Grahn, J Mateos
Semiconductor Science and Technology 26 (2), 025004, 2010
112010
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
G Moschetti, PA Nilsson, N Wadefalk, M Malmkvist, E Lefebvre, J Grahn, ...
2009 IEEE International Conference on Indium Phosphide & Related Materials…, 2009
82009
Cryogenic W-band LNA for ALMA band 2+ 3 with average noise temperature of 24 K
Y Tang, N Wadefalk, JW Kooi, J Schleeh, G Moschetti, P Nilsson, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 176-179, 2017
72017
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation
G Moschetti, E Lefebvre, M Fagerlind, P Nilsson, L Desplanque, ...
Solid-state electronics 87, 85-89, 2013
72013
Cryogenic LNAs for SKA band 2 to 5
J Schleeh, G Moschetti, N Wadefalk, E Cha, A Pourkabirian, G Alestig, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 164-167, 2017
62017
Fabrication and DC characterization of InAs/AlSb self-switching diodes
A Westlund, G Moschetti, H Zhao, P Nilsson, J Grahn
2012 International Conference on Indium Phosphide and Related Materials, 65-68, 2012
62012
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers
E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn
IEEE Electron Device Letters 41 (7), 1005-1008, 2020
52020
Low noise amplifiers for MetOp-SG
M Rsch, A Tessmann, A Leuther, R Weber, G Moschetti, B Aja, ...
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on…, 2016
52016
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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