Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
Physical Review B 92 (23), 235419, 2015
71 2015 The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ...
Ultramicroscopy 176, 93-98, 2017
38 2017 The microstructure of non-polar a-plane (112¯ 0) InGaN quantum wells JT Griffiths, F Oehler, F Tang, S Zhang, WY Fu, T Zhu, SD Findlay, ...
Journal of Applied Physics 119 (17), 2016
24 2016 Evaluation of growth methods for the heteroepitaxy of non-polar (112¯ 0) GAN on sapphire by MOVPE F Oehler, D Sutherland, T Zhu, R Emery, TJ Badcock, MJ Kappers, ...
Journal of crystal growth 408, 32-41, 2014
19 2014 An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire D Sutherland, F Oehler, T Zhu, JT Griffiths, TJ Badcock, P Dawson, ...
physica status solidi (c) 11 (3‐4), 541-544, 2014
17 2014 Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire D Kundys, S Schulz, F Oehler, D Sutherland, TJ Badcock, P Dawson, ...
Journal of Applied Physics 115 (11), 2014
16 2014 Optical studies of non‐polar m‐plane () InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN D Sutherland, T Zhu, JT Griffiths, F Tang, P Dawson, D Kundys, F Oehler, ...
physica status solidi (b) 252 (5), 965-970, 2015
15 2015 Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells S Schulz, DSP Tanner, EP O'Reilly, MA Caro, F Tang, JT Griffiths, ...
Applied Physics Letters 109 (22), 2016
13 2016 Defect reduction in semi-polar (1122) gallium nitride grown using epitaxial lateral overgrowth T Zhu, D Sutherland, TJ Badcock, R Hao, MA Moram, P Dawson, ...
Japanese Journal of Applied Physics 52 (8S), 08JB01, 2013
11 2013 A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a -plane and m -plane GaN substrates D Kundys, D Sutherland, MJ Davies, F Oehler, J Griffiths, P Dawson, ...
Science and Technology of advanced MaTerialS 17 (1), 736-743, 2016
10 2016 Optical Characterisation of Non-polar InGaN/GaN Quantum Wells D Sutherland
University of Manchester, 2015
1 2015 The atomic structure of polar and non-polar InGaN quantum wells and CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ...
2017 Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of -plane InGaN/GaN quantum wells S Schulz, DSP Tanner, EP O'Reilly, MA Caro, F Tang, JT Griffiths, ...
American Institute of Physics, 2016
2016 Research data supporting" The microstructure of non-polar a-plane (11-20) InGaN quantum wells" JT Griffiths, F Oehler, F Tang, S Zhang, WY Fu, T Zhu, SD Findlay, ...
University of Cambridge, 2016
2016 A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on -plane and -plane GaN substrates D Kundys, D Sutherland, MJ Davies, F Oehler, J Griffiths, P Dawson, ...
Institute of Physics, 2016
2016 Research data supporting" Structural, electronic and optical properties of m-plane (In, Ga) N/GaN quantum wells" S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
University of Cambridge, 2015
2015 Optical studies of non-polar m-plane (. D Sutherland, T Zhu, JT Griffiths, F Tang, P Dawson, D Kundys, F Oehler, ...
Physica Status Solidi (B) 252 (5), 2015
2015