Ezra Bussmann
Citata da
Citata da
Dynamics of solid thin-film dewetting in the silicon-on-insulator system
E Bussmann, F Cheynis, F Leroy, P Müller, O Pierre-Louis
New Journal of Physics 13 (4), 043017, 2011
Dewetting dynamics of silicon-on-insulator thin films
F Cheynis, E Bussmann, F Leroy, T Passanante, P Müller
Physical Review B 84 (24), 245439, 2011
Sub-10 nm lateral spatial resolution in scanning capacitance microscopy achieved with solid platinum probes
E Bussmann, CC Williams
Review of scientific instruments 75 (2), 422-425, 2004
Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface
E Bussmann, CC Williams
Applied physics letters 88 (26), 263108, 2006
Single-electron tunneling to insulator surfaces measured by frequency detection electrostatic force microscopy
E Bussmann, DJ Kim, CC Williams
Applied physics letters 85 (13), 2538-2540, 2004
All-optical lithography process for contacting nanometer precision donor devices
DR Ward, MT Marshall, DM Campbell, TM Lu, JC Koepke, ...
Applied Physics Letters 111 (19), 193101, 2017
One-Dimensional Defect-Mediated Diffusion of Si Adatoms on the Si (111)−(5× 2)− Au Surface
E Bussmann, S Bockenhauer, FJ Himpsel, BS Swartzentruber
Physical review letters 101 (26), 266101, 2008
Single-electron manipulation to and from a surface by electrostatic force microscopy
E Bussmann, N Zheng, CC Williams
Applied Physics Letters 86 (16), 163109, 2005
Scanning capacitance microscopy registration of buried atomic-precision donor devices
E Bussmann, M Rudolph, GS Subramania, S Misra, SM Carr, E Langlois, ...
Nanotechnology 26 (8), 085701, 2015
Thermal instability of silicon-on-insulator thin films measured by low-energy electron microscopy
E Bussmann, F Cheynis, F Leroy, P Müller
IOP Conference Series: Materials Science and Engineering 12 (1), 012016, 2010
Stress effects on solid–state dewetting of nano–thin films
F Cheynis, E Bussmann, F Leroy, T Passanante, P Müller
International journal of nanotechnology 9 (3-7), 396-411, 2012
Imaging of localized electronic states at a nonconducting surface by single-electron tunneling force microscopy
EB Bussmann, N Zheng, CC Williams
Nano letters 6 (11), 2577-2580, 2006
Nonequilibrium diffusion of reactive solid islands
F Leroy, Y Saito, F Cheynis, E Bussmann, O Pierre-Louis, P Müller
Physical Review B 89 (23), 235406, 2014
Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures
DA Scrymgeour, A Baca, K Fishgrab, RJ Simonson, M Marshall, ...
Applied Surface Science 423, 1097-1102, 2017
Atomic precision advanced manufacturing for digital electronics
DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ...
arXiv preprint arXiv:2002.11003, 2020
Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si (001)
F Leroy, T Passanante, F Cheynis, S Curiotto, EB Bussmann, P Müller
Applied Physics Letters 108 (11), 111601, 2016
Ge diffusion at the Si (100) surface
E Bussmann, BS Swartzentruber
Physical review letters 104 (12), 126101, 2010
A three-dimensional model of single-electron tunneling between a conductive probe and a localized electronic state in a dielectric
N Zheng, CC Williams, EG Mishchenko, E Bussmann
Journal of applied physics 101 (9), 093702, 2007
Electrostatic force microscopy analysis of lipid miscibility in two-component monolayers
T Goodman, E Bussmann, C Williams, M Taveras, D Britt
Langmuir 20 (9), 3684-3689, 2004
Buried Pd slows self-diffusion on Cu (001)
E Bussmann, I Ermanoski, PJ Feibelman, NC Bartelt, GL Kellogg
Physical Review B 84 (24), 245440, 2011
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