Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption P Vogt, O Bierwagen
Applied Physics Letters 108 (7), 2016
162 2016 Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001) R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied physics express 8 (1), 011101, 2014
130 2014 The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy P Vogt, O Bierwagen
Applied Physics Letters 106 (8), 2015
106 2015 Metal-exchange catalysis in the growth of sesquioxides: Towards heterostructures of transparent oxide semiconductors P Vogt, O Brandt, H Riechert, J Lähnemann, O Bierwagen
Physical review letters 119 (19), 196001, 2017
88 2017 Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructures P Vogt, A Mauze, F Wu, B Bonef, JS Speck
Applied Physics Express 11 (11), 115503, 2018
80 2018 Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction Z Cheng, M Hanke, P Vogt, O Bierwagen, A Trampert
Applied Physics Letters 111 (16), 2017
74 2017 Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy P Mazzolini, P Vogt, R Schewski, C Wouters, M Albrecht, O Bierwagen
APL Materials 7 (2), 2019
73 2019 Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy P Vogt, FVE Hensling, K Azizie, CS Chang, D Turner, J Park, ...
Apl Materials 9 (3), 2021
53 2021 Influence of Polymorphism on the Electronic Structure of Ga2 O3 JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ...
Chemistry of Materials 32 (19), 8460-8470, 2020
45 2020 Evidence of -wave superconductivity in K Na Fe As ( ) single crystals from low-temperature specific-heat measurements M Abdel-Hafiez, V Grinenko, S Aswartham, I Morozov, M Roslova, ...
Physical Review B 87 (18), 180507, 2013
45 2013 Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ...
Applied Physics Letters 119 (6), 2021
40 2021 Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1− x) 2O3 P Vogt, O Bierwagen
APL Materials 4 (8), 2016
37 2016 Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to , , and P Vogt, O Bierwagen
Physical Review Materials 2 (12), 120401, 2018
36 2018 Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy P Vogt, O Bierwagen
Applied Physics Letters 109 (6), 2016
36 2016 Domain matching epitaxy of cubic In2 O3 on r ‐plane sapphire P Vogt, A Trampert, M Ramsteiner, O Bierwagen
physica status solidi (a) 212 (7), 1433-1439, 2015
21 2015 Controlled Si doping of β-Ga2O3 by molecular beam epitaxy DJ J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T ...
Applied Physics Letters 121, 072108, 2022
19 2022 Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy K Azizie, FVE Hensling, CA Gorsak, Y Kim, NA Pieczulewski, DM Dryden, ...
APL materials 11 (4), 2023
17 2023 Growth kinetics, thermodynamics, and phase formation of group-III and IV oxides during molecular beam epitaxy P Vogt
Berlin: Humboldt-Universität zu Berlin, 2017
13 2017 Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide-catalyzed epitaxy P Vogt, FVE Hensling, K Azizie, JP McCandless, J Park, K DeLello, ...
Physical Review Applied 17 (3), 034021, 2022
11 2022 Nucleation Window of Ga2 O3 and In2 O3 for Molecular Beam Epitaxy on (0001) Al2 O3 A Karg, JA Bich, A Messow, M Schowalter, S Figge, A Rosenauer, P Vogt, ...
Crystal Growth & Design 23 (6), 4435-4441, 2023
4 2023