| Electron transport at metal-semiconductor interfaces: General theory RT Tung Physical Review B 45 (23), 13509, 1992 | 1775 | 1992 |
| Recent advances in Schottky barrier concepts RT Tung Materials Science and Engineering: R: Reports 35 (1-3), 1-138, 2001 | 1446 | 2001 |
| The physics and chemistry of the Schottky barrier height RT Tung Applied Physics Reviews 1 (1), 2014 | 1295 | 2014 |
| Electron transport of inhomogeneous Schottky barriers: A numerical study JP Sullivan, RT Tung, MR Pinto, WR Graham Journal of applied physics 70 (12), 7403-7424, 1991 | 882 | 1991 |
| Schottky-barrier formation at single-crystal metal-semiconductor interfaces RT Tung Physical review letters 52 (6), 461, 1984 | 541 | 1984 |
| Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-Ni Epitaxial Structures RT Tung, JM Gibson, JM Poate Physical review letters 50 (6), 429, 1983 | 517 | 1983 |
| Chemical bonding and Fermi level pinning at metal-semiconductor interfaces RT Tung Physical review letters 84 (26), 6078, 2000 | 474 | 2000 |
| Electron transport of inhomogeneous Schottky barriers RT Tung Applied physics letters 58 (24), 2821-2823, 1991 | 437 | 1991 |
| Formation of an electric dipole at metal-semiconductor interfaces RT Tung Physical review B 64 (20), 205310, 2001 | 369 | 2001 |
| Origin of the excess capacitance at intimate Schottky contacts J Werner, AFJ Levi, RT Tung, M Anzlowar, M Pinto Physical review letters 60 (1), 53, 1988 | 281 | 1988 |
| Electrostatic Properties of Ideal and Non‐ideal Polar Organic Monolayers: Implications for Electronic Devices A Natan, L Kronik, H Haick, RT Tung Advanced Materials 19 (23), 4103-4117, 2007 | 265 | 2007 |
| Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements S Huang, S Banerjee, RT Tung, S Oda Journal of applied physics 93 (1), 576-581, 2003 | 264 | 2003 |
| Epitaxial silicides RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson Thin Solid Films 93 (1-2), 77-90, 1982 | 259 | 1982 |
| Schottky-barrier inhomogeneity at epitaxial interfaces on Si(100) RT Tung, AFJ Levi, JP Sullivan, F Schrey Physical review letters 66 (1), 72, 1991 | 258 | 1991 |
| Growth of single‐crystal CoSi2 on Si(111) RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson Applied Physics Letters 40 (8), 684-686, 1982 | 240 | 1982 |
| Transistor action in Si/CoSi2/Si heterostructures JC Hensel, AFJ Levi, RT Tung, JM Gibson Applied physics letters 47 (2), 151-153, 1985 | 239 | 1985 |
| Oxide mediated epitaxy of CoSi2 on silicon RT Tung Applied Physics Letters 68 (24), 3461-3463, 1996 | 232 | 1996 |
| Growth of single crystal epitaxial silicides on silicon by the use of template layers RT Tung, JM Gibson, JM Poate Applied physics letters 42 (10), 888-890, 1983 | 185 | 1983 |
| Single atom self-diffusion on nickel surfaces RT Tung, WR Graham Surface Science 97 (1), 73-87, 1980 | 185 | 1980 |
| Control of a natural permeable CoSi2 base transistor RT Tung, AFJ Levi, JM Gibson Applied physics letters 48 (10), 635-637, 1986 | 176 | 1986 |
