Electron transport at metal-semiconductor interfaces: General theory RT Tung
Physical Review B 45 (23), 13509, 1992
1776 1992 Recent advances in Schottky barrier concepts RT Tung
Materials Science and Engineering: R: Reports 35 (1-3), 1-138, 2001
1447 2001 The physics and chemistry of the Schottky barrier height RT Tung
Applied Physics Reviews 1 (1), 2014
1298 2014 Electron transport of inhomogeneous Schottky barriers: A numerical study JP Sullivan, RT Tung, MR Pinto, WR Graham
Journal of applied physics 70 (12), 7403-7424, 1991
882 1991 Schottky-barrier formation at single-crystal metal-semiconductor interfaces RT Tung
Physical review letters 52 (6), 461, 1984
541 1984 Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-Ni Epitaxial Structures RT Tung, JM Gibson, JM Poate
Physical review letters 50 (6), 429, 1983
517 1983 Chemical bonding and Fermi level pinning at metal-semiconductor interfaces RT Tung
Physical review letters 84 (26), 6078, 2000
474 2000 Electron transport of inhomogeneous Schottky barriers RT Tung
Applied physics letters 58 (24), 2821-2823, 1991
438 1991 Formation of an electric dipole at metal-semiconductor interfaces RT Tung
Physical review B 64 (20), 205310, 2001
369 2001 Origin of the excess capacitance at intimate Schottky contacts J Werner, AFJ Levi, RT Tung, M Anzlowar, M Pinto
Physical review letters 60 (1), 53, 1988
281 1988 Electrostatic Properties of Ideal and Non‐ideal Polar Organic Monolayers: Implications for Electronic Devices A Natan, L Kronik, H Haick, RT Tung
Advanced Materials 19 (23), 4103-4117, 2007
265 2007 Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements S Huang, S Banerjee, RT Tung, S Oda
Journal of applied physics 93 (1), 576-581, 2003
264 2003 Epitaxial silicides RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson
Thin Solid Films 93 (1-2), 77-90, 1982
259 1982 Schottky-barrier inhomogeneity at epitaxial interfaces on Si(100) RT Tung, AFJ Levi, JP Sullivan, F Schrey
Physical review letters 66 (1), 72, 1991
258 1991 Growth of single‐crystal CoSi2 on Si(111) RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson
Applied Physics Letters 40 (8), 684-686, 1982
240 1982 Transistor action in Si/CoSi2/Si heterostructures JC Hensel, AFJ Levi, RT Tung, JM Gibson
Applied physics letters 47 (2), 151-153, 1985
239 1985 Oxide mediated epitaxy of CoSi2 on silicon RT Tung
Applied Physics Letters 68 (24), 3461-3463, 1996
233 1996 Growth of single crystal epitaxial silicides on silicon by the use of template layers RT Tung, JM Gibson, JM Poate
Applied physics letters 42 (10), 888-890, 1983
185 1983 Single atom self-diffusion on nickel surfaces RT Tung, WR Graham
Surface Science 97 (1), 73-87, 1980
185 1980 Control of a natural permeable CoSi2 base transistor RT Tung, AFJ Levi, JM Gibson
Applied physics letters 48 (10), 635-637, 1986
176 1986