| Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ... Journal of Applied Physics 110 (12), 2011 | 540 | 2011 |
| Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures M Lanza, K Zhang, M Porti, M Nafría, ZY Shen, LF Liu, JF Kang, D Gilmer, ... Applied Physics Letters 100 (12), 2012 | 228 | 2012 |
| Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich Applied Physics Letters 101 (19), 2012 | 202 | 2012 |
| Emerging yield and reliability challenges in nanometer CMOS technologies G Gielen, P De Wit, E Maricau, J Loeckx, J Martin-Martinez, B Kaczer, ... Proceedings of the conference on Design, automation and test in Europe, 1322 …, 2008 | 188 | 2008 |
| Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ... 2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010 | 163 | 2010 |
| Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ... Solid-State Electronics 65, 146-150, 2011 | 154 | 2011 |
| Grain boundary mediated leakage current in polycrystalline HfO2 films K McKenna, A Shluger, V Iglesias, M Porti, M Nafría, M Lanza, G Bersuker Microelectronic Engineering 88 (7), 1272-1275, 2011 | 123 | 2011 |
| Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics E Miranda, J Suñé, R Rodríguez, M Nafria, X Aymerich, L Fonseca, ... IEEE Transactions on Electron Devices 47 (1), 82-89, 2000 | 121 | 2000 |
| Exploratory observations of post‐breakdown conduction in polycrystalline‐silicon and metal‐gated thin‐oxide metal‐oxide‐semiconductor capacitors M Nafria, J Suñé, X Aymerich Journal of Applied Physics 73 (1), 205-215, 1993 | 95 | 1993 |
| A function-fit model for the soft breakdown failure mode E Miranda, J Sune, R Rodriguez, M Nafria, X Aymerich IEEE Electron Device Letters 20 (6), 265-267, 1999 | 91 | 1999 |
| Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M Nafría, G Bersuker Journal of Applied Physics 114 (13), 2013 | 89 | 2013 |
| Probabilistic defect occupancy model for NBTI J Martin-Martinez, B Kaczer, M Toledano-Luque, R Rodriguez, M Nafria, ... 2011 International Reliability Physics Symposium, XT. 4.1-XT. 4.6, 2011 | 86 | 2011 |
| Point contact conduction at the oxide breakdown of MOS devices J Sune, E Miranda, M Nafria, X Aymerich International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 85 | 1998 |
| New weighted time lag method for the analysis of random telegraph signals J Martin-Martinez, J Diaz, R Rodriguez, M Nafria, X Aymerich IEEE Electron Device Letters 35 (4), 479-481, 2014 | 72 | 2014 |
| Nanometer-scale electrical characterization of stressed ultrathin films using conducting atomic force microscopy M Porti, M Nafrı́a, X Aymerich, A Olbrich, B Ebersberger Applied Physics Letters 78 (26), 4181-4183, 2001 | 72 | 2001 |
| Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures V Iglesias, M Porti, M Nafría, X Aymerich, P Dudek, T Schroeder, ... Applied physics letters 97 (26), 2010 | 71 | 2010 |
| Soft breakdown fluctuation events in ultrathin layers E Miranda, J Suñé, R Rodriguez, M Nafria, X Aymerich Applied physics letters 73 (4), 490-492, 1998 | 71 | 1998 |
| Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization. M Lanza, A Bayerl, T Gao, M Porti, M Nafria, GY Jing, YF Zhang, ZF Liu, ... Advanced Materials (Deerfield Beach, Fla.) 25 (10), 1440-1444, 2012 | 70 | 2012 |
| Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation M Lanza, Y Wang, A Bayerl, T Gao, M Porti, M Nafria, H Liang, G Jing, ... Journal of Applied Physics 113 (10), 2013 | 68 | 2013 |
| Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Applied Physics Letters 99 (21), 2011 | 60 | 2011 |
