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Włodzimierz Nakwaski
Włodzimierz Nakwaski
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Titolo
Citata da
Citata da
Anno
Vertical-Cavity Surface-Emitting Laser Devices ed H Li and K Iga
M Osinski, W Nakwaski
Berlin: Springer, 2003
321*2003
Thermal conductivity of binary, ternary, and quaternary III‐V compounds
W Nakwaski
Journal of Applied Physics 64 (1), 159-166, 1988
2141988
Physics of Semiconductor Lasers 1North-Holland
B Mroziewicz, M Bugajski, W Nakwaski
Amsterdam, 1991
200*1991
Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds
W Nakwaski
Physica B: Condensed Matter 210 (1), 1-25, 1995
1481995
Thermal properties of etched-well surface-emitting semiconductor lasers
W Nakwaski, M Osinski
IEEE journal of quantum electronics 27 (6), 1391-1401, 1991
1061991
Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation
RP Sarzała, W Nakwaski
Journal of Physics: Condensed Matter 16 (31), S3121, 2004
972004
Erratum: Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays
W Nakwaski, M Osiński
Electronics Letters 28, 1283, 1992
87*1992
Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers
W Nakwaski
Optical and quantum electronics 28 (4), 335-352, 1996
671996
Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors
W Nakwaski, M Osinski
IEEE Journal of quantum Electronics 29 (6), 1981-1995, 1993
641993
Effective thermal conductivity analysis of 1.55 mu m InGaAsP/InP vertical-cavity top-surface-emitting microlasers
M Osinski, W Nakwaski
Electronics Letters 11 (29), 1015-1016, 1993
631993
77 K operation of AlGaAs/GaAs quantum cascade laser at 9 um
K Kosiel, M Bugajski, A Szerling, J Kubacka-Traczyk, P Karbownik, ...
Photonics Letters of Poland 1 (1), 16-18, 2009
592009
Transient thermal properties of high-power diode laser bars
M Ziegler, F Weik, JW Tomm, T Elsaesser, W Nakwaski, RP Sarzała, ...
Applied physics letters 89 (26), 2006
552006
Thermal analysis of the catastrophic mirror damage in laser diodes
W Nakwaski
Journal of applied physics 57 (7), 2424-2430, 1985
551985
Dynamical thermal properties of stripe-geometry laser diodes
W Nakwaski
IEE Proceedings I (Solid-State and Electron Devices) 131 (3), 94-102, 1984
531984
III: Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers
W Nakwaski, M Osiński
Progress in Optics 38, 165-262, 1998
511998
Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures
M Osinski, T Svimonishvili, GA Smolyakov, VA Smagley, P Mackowiak, ...
IEEE Photonics Technology Letters 13 (7), 687-689, 2001
492001
Transverse modes in gain-guided vertical-cavity surface-emitting lasers
W Nakwaski, RP Sarzała
Optics communications 148 (1-3), 63-69, 1998
431998
Thermal analysis of closely-packed two-dimensional etched-well surface-emitting laser arrays
M Osinski, W Nakwaski
IEEE Journal of Selected Topics in Quantum Electronics 1 (2), 681-696, 1995
421995
Thermal effects in vertical-cavity surface-emitting lasers
M OSIŃSKI, W NAKWASKI
International Journal of High Speed Electronics and Systems 5 (04), 667-730, 1994
421994
Oxidation kinetics of AlAs and (AlGa) As layers in GaAs-based diode laser structures: comparative analysis of available experimental data
W Nakwaski, M Wasiak, P Maćkowiak, W Bedyk, M Osiński, A Passaseo, ...
Semiconductor science and technology 19 (3), 333, 2003
412003
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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