Segui
Michael G. Stanford
Michael G. Stanford
General Graphene Corporation
Email verificata su generalgraphenecorp.com
Titolo
Citata da
Citata da
Anno
Gram-scale bottom-up flash graphene synthesis
DX Luong, KV Bets, WA Algozeeb, MG Stanford, C Kittrell, W Chen, ...
Nature 577 (7792), 647-651, 2020
2662020
Laser-induced graphene for flexible and embeddable gas sensors
MG Stanford, K Yang, Y Chyan, C Kittrell, JM Tour
ACS nano 13 (3), 3474-3482, 2019
1622019
Simulation-Guided 3D Nanomanufacturing via Focused Electron Beam Induced Deposition
JD Fowlkes, R Winkler, BB Lewis, MG Stanford, H Plank, PD Rack
ACS nano 10 (6), 6163-6172, 2016
1352016
Laser-induced graphene triboelectric nanogenerators
MG Stanford, JT Li, Y Chyan, Z Wang, W Wang, JM Tour
ACS nano 13 (6), 7166-7174, 2019
1162019
High-resolution laser-induced graphene. Flexible electronics beyond the visible limit
MG Stanford, C Zhang, JD Fowlkes, A Hoffman, IN Ivanov, PD Rack, ...
ACS applied materials & interfaces 12 (9), 10902-10907, 2020
852020
Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions
MG Stanford, PR Pudasaini, A Belianinov, N Cross, JH Noh, MR Koehler, ...
Scientific reports 6 (1), 1-10, 2016
852016
High-performance multilayer WSe2 field-effect transistors with carrier type control
PR Pudasaini, A Oyedele, C Zhang, MG Stanford, N Cross, AT Wong, ...
Nano Research, 1-9, 2017
822017
Self-sterilizing laser-induced graphene bacterial air filter
MG Stanford, JT Li, Y Chen, EA McHugh, A Liopo, H Xiao, JM Tour
ACS nano 13 (10), 11912-11920, 2019
762019
Nanoforging single layer MoSe2 through defect engineering with focused helium ion beams
V Iberi, L Liang, AV Ievlev, MG Stanford, MW Lin, X Li, M Mahjouri-Samani, ...
Scientific reports 6 (1), 1-9, 2016
762016
Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene
MG Stanford, PD Rack, D Jariwala
npj 2D Materials and Applications 2 (1), 1-15, 2018
722018
High-fidelity 3D-nanoprinting via focused electron beams: computer-aided design (3BID)
JD Fowlkes, R Winkler, BB Lewis, A Fernandez-Pacheco, L Skoric, ...
ACS Applied Nano Materials 1 (3), 1028-1041, 2018
572018
Advanced nanoscale patterning and material synthesis with gas field helium and neon ion beams
MG Stanford, BB Lewis, K Mahady, JD Fowlkes, PD Rack
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2017
552017
High conduction hopping behavior induced in transition metal dichalcogenides by percolating defect networks: toward atomically thin circuits
MG Stanford, PR Pudasaini, ET Gallmeier, N Cross, L Liang, A Oyedele, ...
Advanced Functional Materials 27 (36), 1702829, 2017
492017
Purification of nanoscale electron beam induced platinum deposits via pulsed laser induced oxidation reaction
MG Stanford, BB Lewis, JH Noh, JD Fowlkes, NA Roberts, H Plank, ...
ACS applied materials & interfaces 6 (23), 21256-21263, 2014
482014
Laser‐Induced Silicon Oxide for Anode‐Free Lithium Metal Batteries
W Chen, RV Salvatierra, M Ren, J Chen, MG Stanford, JM Tour
Advanced Materials 32 (33), 2002850, 2020
462020
Flash graphene morphologies
MG Stanford, KV Bets, DX Luong, PA Advincula, W Chen, JT Li, Z Wang, ...
ACS nano 14 (10), 13691-13699, 2020
452020
Laminated laser-induced graphene composites
JT Li, MG Stanford, W Chen, SE Presutti, JM Tour
ACS nano 14 (7), 7911-7919, 2020
432020
Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair
JH Noh, MG Stanford, BB Lewis, JD Fowlkes, H Plank, PD Rack
Applied Physics A 117 (4), 1705-1713, 2014
422014
Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching
MG Stanford, PR Pudasaini, N Cross, K Mahady, AN Hoffman, ...
Small Methods 1 (4), 1600060, 2017
392017
In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating
MG Stanford, BB Lewis, V Iberi, JD Fowlkes, S Tan, R Livengood, ...
Small 12 (13), 1779-1787, 2016
332016
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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