A microprocessor based on a two-dimensional semiconductor S Wachter, DK Polyushkin, O Bethge, T Mueller
Nature communications 8 (1), 14948, 2017
363 2017 Controlled generation of ap–n junction in a waveguide integrated graphene photodetector S Schuler, D Schall, D Neumaier, L Dobusch, O Bethge, B Schwarz, ...
Nano letters 16 (11), 7107-7112, 2016
216 2016 Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and … M Capriotti, P Lagger, C Fleury, M Oposich, O Bethge, C Ostermaier, ...
Journal of Applied Physics 117 (2), 2015
61 2015 All-oxide solar cells based on electrodeposited Cu2O absorber and atomic layer deposited ZnMgO on precious-metal-free electrode J Kaur, O Bethge, RA Wibowo, N Bansal, M Bauch, R Hamid, ...
Solar Energy Materials and Solar Cells 161, 449-459, 2017
57 2017 Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability M Capriotti, A Alexewicz, C Fleury, M Gavagnin, O Bethge, D Visalli, ...
Applied Physics Letters 104 (11), 2014
48 2014 Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness S Abermann, O Bethge, C Henkel, E Bertagnolli
Applied Physics Letters 94 (26), 2009
41 2009 Atomic layer-deposited platinum in high-k/metal gate stacks C Henkel, S Abermann, O Bethge, E Bertagnolli
Semiconductor science and technology 24 (12), 125013, 2009
38 2009 Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric O Bethge, C Henkel, S Abermann, G Pozzovivo, M Stoeger-Pollach, ...
Applied surface science 258 (8), 3444-3449, 2012
32 2012 Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics S Abermann, G Pozzovivo, J Kuzmik, C Ostermaier, C Henkel, O Bethge, ...
Electronics letters 45 (11), 570-572, 2009
27 2009 ALD grown bilayer junction of ZnO: Al and tunnel oxide barrier for SIS solar cell O Bethge, M Nobile, S Abermann, M Glaser, E Bertagnolli
Solar energy materials and solar cells 117, 178-182, 2013
26 2013 Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium S Abermann, C Henkel, O Bethge, G Pozzovivo, P Klang, E Bertagnolli
Applied Surface Science 256 (16), 5031-5034, 2010
25 2010 Zirconium dioxide nanolayer passivated impedimetric sensors for cell-based assays D Sticker, M Rothbauer, V Charwat, J Steinkuehler, O Bethge, ...
Sensors and Actuators B: Chemical 213, 35-44, 2015
24 2015 Artificial cilia of magnetically tagged polymer nanowires for biomimetic mechanosensing P Schroeder, J Schotter, A Shoshi, M Eggeling, O Bethge, A Hütten, ...
Bioinspiration & Biomimetics 6 (4), 046007, 2011
24 2011 Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors O Bethge, S Abermann, C Henkel, CJ Straif, H Hutter, J Smoliner, ...
Applied Physics Letters 96 (5), 2010
24 2010 Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality C Henkel, O Bethge, S Abermann, S Puchner, H Hutter, E Bertagnolli
Applied Physics Letters 97 (15), 2010
23 2010 Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing O Bethge, C Zimmermann, B Lutzer, S Simsek, J Smoliner, ...
Journal of Applied Physics 116 (21), 2014
22 2014 Streptavidin binding as a model to characterize thiol–ene chemistry-based polyamine surfaces for reversible photonic protein biosensing E Melnik, P Muellner, O Bethge, E Bertagnolli, R Hainberger, ...
Chemical communications 50 (19), 2424-2427, 2014
22 2014 Ge p-MOSFETs With Scaled ALD C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, M Reiche, ...
IEEE transactions on electron devices 57 (12), 3295-3302, 2010
21 2010 Tip geometry effects in scanning capacitance microscopy on GaAs Schottky and metal-oxide-semiconductor-type junctions C Eckhardt, W Brezna, O Bethge, E Bertagnolli, J Smoliner
Journal of Applied Physics 105 (11), 2009
20 2009 Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, ...
Microelectronic engineering 88 (3), 262-267, 2011
19 2011 