High peak power JP Commin, DG Revin, SY Zhang, AB Krysa, K Kennedy, JW Cockburn
Applied Physics Letters 97 (3), 031108, 2010
49 2010 Optical properties of J Bai, T Wang, P Comming, PJ Parbrook, JPR David, AG Cullis
Journal of applied physics 99 (2), 023513, 2006
35 2006 Room-temperature GaAs/AlGaAs quantum cascade lasers grown by metal–organic vapor phase epitaxy AB Krysa, DG Revin, JP Commin, CN Atkins, K Kennedy, Y Qiu, T Walther, ...
IEEE Photonics Technology Letters 23 (12), 774-776, 2011
22 2011 InP-based midinfrared quantum cascade lasers for wavelengths below 4 μm DG Revin, JP Commin, SY Zhang, AB Krysa, K Kennedy, JW Cockburn
IEEE Journal of Selected Topics in Quantum Electronics 17 (5), 1417-1425, 2011
21 2011 High performance, high temperature JP Commin, DG Revin, SY Zhang, AB Krysa, JW Cockburn
Applied Physics Letters 95 (11), 111113, 2009
21 2009 Low threshold room temperature GaAs/AlGaAs quantum cascade laser with InAlP waveguide CN Atkins, AB Krysa, DG Revin, K Kennedy, JP Commin, JW Cockburn
Electronics letters 47 (21), 1193-1194, 2011
10 2011 Room temperature λ~ 3.3 μm InP-based inGaAs/AIAs (Sb) quantum cascade lasers SY Zhang, DG Revin, JP Commin, K Kennedy, AB Krysa, JW Cockburn
Electronics letters 46 (6), 439-440, 2010
8 2010 JP Commin, K Kennedy, DG Revin, SY Zhang, AB Krysa, JW Cockburn
Applied Physics Letters 97 (11), 111113, 2010
7 2010 Next generation 9xx/10xx nm high power laser diode bars for multi-kilowatt industrial applications P Commin, R Todt, M Krejci, R Bättig, R Brunner, N Lichtenstein
High-Power Diode Laser Technology and Applications XI 8605, 86050Y, 2013
4 2013 High-Peak-Power Room-Temperature DG Revin, S Zhang, JP Commin, K Kennedy, AB Krysa, JW Cockburn
IEEE Photonics Technology Letters 22 (11), 757-759, 2010
4 2010 Single grating period quantum cascade laser array with broad wavelength tuning range K Kennedy, DG Revin, JP Commin, AB Krysa, MP Semtsiv, ...
Electronics Letters 44 (22), 1306-1307, 2008
4 2008 Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3–4 µm range DG Revin, SY Zhang, JP Commin, JW Cockburn, K Kennedy, AB Krysa, ...
Conference on Lasers and Electro-Optics, CThAA5, 2009
3 2009 Recent progress in short wavelength quantum cascade lasers DG Revin, JP Commin, JW Cockburn, SY Zhang, K Kennedy, AB Krysa, ...
2011 IEEE Photonics Society Summer Topical Meeting Series, 57-58, 2011
2 2011 High temperature λ∼ 4 µm In0. 7Ga0. 3As/In0. 34Al0. 66As quantum cascade lasers grown by MOVPE DG Revin, K Kennedy, JP Commin, Y Qiu, T Walther, JW Cockburn, ...
Electronics Letters 47 (9), 559-561, 2011
2 2011 Probing diagonal laser transitions in InGaAs/AlInAs/InP quantum cascade lasers MR Soulby, DG Revin, JP Commin, AB Krysa, JS Roberts, JW Cockburn
Journal of Applied Physics 106 (12), 123106, 2009
2 2009 High performance short wavelength InP-based quantum cascade lasers DG Revin, JP Commin, SY Zhang, AB Krysa, K Kennedy, JW Cockburn
Novel In-Plane Semiconductor Lasers IX 7616, 761612, 2010
1 2010 Semiconductor device F Mohn, P Commin
US Patent 10,192,800, 2019
2019 Thyristor with improved plasma spreading M Bellini, J Vobecky, P Commin
US Patent 10,170,557, 2019
2019 Room temperature GaAs/AlGaAs quantum cascade lasers with InGaP and InAlP waveguides DG Revin, CN Atkins, JP Commin, JW Cockburn, Y Qiu, T Walther, ...
CLEO: Science and Innovations, CTuP5, 2011
2011 Short wavelength InP based quantum cascade lasers DG Revin, JP Commin, JW Cockburn, SY Zhang, K Kennedy, AB Krysa, ...
Conference on Lasers and Electro-Optics, CTuE1, 2010
2010 
Dmitry RevinThe University of SheffieldEmail verificata su sheffield.ac.uk
