P.M. Lenahan
P.M. Lenahan
Distinguished Professor of Engineering Science and Mecahnics and Co-Chair, Inter-College Graduate
Email verificata su engr.psu.edu
Titolo
Citata da
Citata da
Anno
Hole traps and trivalent silicon centers in metal/oxide/silicon devices
PM Lenahan, PV Dressendorfer
Journal of Applied Physics 55 (10), 3495-3499, 1984
7751984
What can electron paramagnetic resonance tell us about the system?
PM Lenahan, JF Conley Jr
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
3411998
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
DT Krick, PM Lenahan, J Kanicki
Journal of applied physics 64 (7), 3558-3563, 1988
2061988
The effect of interfacial layer properties on the performance of Hf-based gate stack devices
G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ...
Journal of Applied Physics 100 (9), 094108, 2006
1802006
Thermal-equilibrium defect processes in hydrogenated amorphous silicon
ZE Smith, S Aljishi, D Slobodin, V Chu, S Wagner, PM Lenahan, RR Arya, ...
Physical review letters 57 (19), 2450, 1986
1691986
An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface
PM Lenahan, PV Dressendorfer
Journal of Applied Physics 54 (3), 1457-1460, 1983
1691983
Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates
YY Kim, PM Lenahan
Journal of applied physics 64 (7), 3551-3557, 1988
1631988
First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride
WL Warren, PM Lenahan, SE Curry
Physical review letters 65 (2), 207, 1990
1561990
Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface
PM Lenahan, PV Dressendorfer
Applied Physics Letters 41 (6), 542-544, 1982
1481982
Defects in microelectronic materials and devices
DM Fleetwood, RD Schrimpf
CRC press, 2008
1262008
Nature of the E’ deep hole trap in metal‐oxide‐semiconductor oxides
HS Witham, PM Lenahan
Applied physics letters 51 (13), 1007-1009, 1987
1261987
Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si
AY Kang, PM Lenahan, JF Conley Jr
Applied physics letters 83 (16), 3407-3409, 2003
1222003
Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures
PM Lenahan, PV Dressendorfer
Applied physics letters 44 (1), 96-98, 1984
1211984
First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride
PM Lenahan, SE Curry
Applied physics letters 56 (2), 157-159, 1990
1201990
Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride
WL Warren, PM Lenahan
Physical Review B 42 (3), 1773, 1990
1081990
Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon
JF Conley, PM Lenahan
Applied physics letters 62 (1), 40-42, 1993
1001993
Defects and impurities in thermal oxides on silicon
KL Brower, PM Lenahan, PV Dressendorfer
Applied Physics Letters 41 (3), 251-253, 1982
1001982
Atomic-scale defects involved in the negative-bias temperature instability
JP Campbell, PM Lenahan, CJ Cochrane, AT Krishnan, S Krishnan
IEEE Transactions on Device and Materials Reliability 7 (4), 540-557, 2007
982007
Density of states of interface trap centers
JP Campbell, PM Lenahan
Applied physics letters 80 (11), 1945-1947, 2002
982002
Electron spin resonance evidence that E'/sub/spl gamma//centers can behave as switching oxide traps
JF Conley, PM Lenahan, AJ Lelis, TR Oldham
IEEE Transactions on Nuclear Science 42 (6), 1744-1749, 1995
971995
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