Ivan G. Ivanov
Ivan G. Ivanov
Associate professor in physics, Linköping University
Email verificata su liu.se
Citata da
Citata da
Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering
M Tzolov, N Tzenov, D Dimova-Malinovska, M Kalitzova, C Pizzuto, ...
Thin solid films 379 (1-2), 28-36, 2000
Growth of SiC by “Hot‐Wall” CVD and HTCVD
O Kordina, C Hallin, A Henry, JP Bergman, I Ivanov, A Ellison, NT Son, ...
physica status solidi (b) 202 (1), 321-334, 1997
Annealing effects on optical properties of low temperature grown ZnO nanorod arrays
LL Yang, QX Zhao, M Willander, JH Yang, I Ivanov
Journal of Applied Physics 105 (5), 053503, 2009
High temperature chemical vapor deposition of SiC
O Kordina, C Hallin, A Ellison, AS Bakin, IG Ivanov, A Henry, R Yakimova, ...
Applied physics letters 69 (10), 1456-1458, 1996
Nitrogen doping concentration as determined by photoluminescence in 4H–and 6H–SiC
IG Ivanov, C Hallin, A Henry, O Kordina, E Janzén
Journal of applied physics 80 (6), 3504-3508, 1996
Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy
G Pozina, I Ivanov, B Monemar, JV Thordson, TG Andersson
Journal of applied physics 84 (7), 3830-3835, 1998
Properties of the bound exciton in
T Egilsson, JP Bergman, IG Ivanov, A Henry, E Janzén
Physical Review B 59 (3), 1956, 1999
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped
S Kamiyama, T Maeda, Y Nakamura, M Iwaya, H Amano, I Akasaki, ...
Journal of applied physics 99 (9), 093108, 2006
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1-8, 2019
Growth of thick GaN layers with hydride vapour phase epitaxy
B Monemar, H Larsson, C Hemmingsson, IG Ivanov, D Gogova
Journal of crystal growth 281 (1), 17-31, 2005
Correlation between the antisite pair and the center in SiC
A Gali, P Deák, E Rauls, NT Son, IG Ivanov, FHC Carlsson, E Janzén, ...
Physical Review B 67 (15), 155203, 2003
Photoluminescence of electron-irradiated
T Egilsson, A Henry, IG Ivanov, JL Lindström, E Janzén
Physical Review B 59 (12), 8008, 1999
Liquid phase epitaxial growth of SiC
M Syväjärvi, R Yakimova, HH Radamson, NT Son, Q Wahab, IG Ivanov, ...
Journal of Crystal Growth 197 (1-2), 147-154, 1999
Extensional rheology of polypropylene melts from the Rheotens test
S Muke, I Ivanov, N Kao, SN Bhattacharya
Journal of non-newtonian fluid mechanics 101 (1-3), 77-93, 2001
Quantum properties of dichroic silicon vacancies in silicon carbide
R Nagy, M Widmann, M Niethammer, DBR Dasari, I Gerhardt, ÖO Soykal, ...
Physical Review Applied 9 (3), 034022, 2018
The melt extensibility of polypropylene
S Muke, I Ivanov, N Kao, SN Bhattacharya
Polymer international 50 (5), 515-523, 2001
Layer-number determination in graphene on SiC by reflectance mapping
IG Ivanov, JU Hassan, T Iakimov, AA Zakharov, R Yakimova, E Janzén
Carbon 77, 492-500, 2014
Stability study of nanopigment dispersions
E Baez, N Quazi, I Ivanov, SN Bhattacharya
Advanced Powder Technology 20 (3), 267-272, 2009
Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in silicon carbide from the donor-acceptor pair emission
IG Ivanov, A Henry, E Janzén
Physical Review B 71 (24), 241201, 2005
Phonon replicas at the M point in A theoretical and experimental study
IG Ivanov, U Lindefelt, A Henry, O Kordina, C Hallin, M Aroyo, T Egilsson, ...
Physical Review B 58 (20), 13634, 1998
Il sistema al momento non puň eseguire l'operazione. Riprova piů tardi.
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