Type-I quantum well cascade diode lasers emitting near 3 μm L Shterengas, R Liang, G Kipshidze, T Hosoda, S Suchalkin, G Belenky
Applied Physics Letters 103 (12), 2013
57 2013 Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm L Shterengas, R Liang, G Kipshidze, T Hosoda, G Belenky, SS Bowman, ...
Applied Physics Letters 105 (16), 2014
55 2014 Cascade pumping of 1.9–3.3 μm type-i quantum well GaSb-based diode lasers L Shterengas, G Kipshidze, T Hosoda, R Liang, T Feng, M Wang, A Stein, ...
IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-8, 2017
52 2017 High-Power 2.2- m Diode Lasers With Heavily Strained Active Region R Liang, J Chen, G Kipshidze, D Westerfeld, L Shterengas, G Belenky
IEEE Photonics Technology Letters 23 (10), 603-605, 2011
46 2011 Cascade pumping of GaSb-based type-I quantum well diode lasers L Shterengas, R Liang, G Kipshidze, T Hosoda, S Suchalkin, G Belenky
Novel In-Plane Semiconductor Lasers XIII 9002, 92-101, 2014
23 2014 Distributed feedback 3.27 µm diode lasers with continuous‐wave output power above 15 mW at room temperature R Liang, T Hosoda, L Shterengas, A Stein, M Lu, G Kipshidze, G Belenky
Electronics Letters 50 (19), 1378-1380, 2014
21 2014 Narrow Ridge - Cascade Diode Lasers With Output Power Above 100 mW at Room Temperature R Liang, T Hosoda, L Shterengas, A Stein, M Lu, G Kipshidze, G Belenky
IEEE Photonics Technology Letters 27 (23), 2425-2428, 2015
16 2015 Room temperature operated diffraction limited λ≃ 3 µm diode lasers with 37 mW of continuous‐wave output power T Hosoda, R Liang, G Kipshidze, L Shterengas, G Belenky
Electronics letters 49 (10), 667-669, 2013
13 2013 Rapid fabrication of bulk graded Al2O3/YAG/YSZ eutectics by combustion synthesis under ultra-high-gravity field J Pei, JT Li, R Liang, KX Chen
Ceramics International 35 (8), 3269-3273, 2009
13 2009 GaSb-Based Diode Lasers With Asymmetric Separate Confinement Heterostructure R Liang, T Hosoda, G Kipshidze, L Shterengas, G Belenky
Photonics Technology Letters, IEEE 25 (10), 925-928, 2013
12 2013 Diffraction limited 3.15 μm cascade diode lasers R Liang, L Shterengas, T Hosoda, A Stein, M Lu, G Kipshidze, G Belenky
Semiconductor Science and Technology 29 (11), 115016, 2014
9 2014 3.3 – 3.4 µm Diode Lasers Based on Triple-layer GaInAsSb Quantum Wells R Liang, G Kipshidze, T Hosoda, L Shterengas, G Belenky
IEEE Photonics Technology Letters 26 (7), 664, 2014
8 2014 Single spatial mode 2–2.2 µm diode lasers fabricated by selective wet etching S Jung, R Liang, G Kipshidze, S Suchalkin, L Shterengas, G Belenky
Semiconductor Science and Technology 27 (8), 085004, 2012
8 2012 Fabrication of an Al2 O3 /YAG/ZrO2 Ternary Eutectic by Combustion Synthesis Melt Casting Under Ultra‐High Gravity R Liang, J Pei, J Li, H Jin, K Chen
Journal of the American Ceramic Society 92 (2), 549-552, 2009
8 2009 Gasb-based mid-infrared single lateral mode lasers fabricated by selective wet etching technique with an etch stop layer S Jung, G Kipshidze, R Liang, S Suchalkin, L Shterengas, G Belenky
Journal of electronic materials 41, 899-904, 2012
7 2012 Progress in development of room temperature cw gasb based diode lasers for 2-3.5 μm spectral region T HOSODA, J CHEN, G TSVID, D WESTERFELD, RUI LIANG, ...
International Journal of High Speed Electronics and Systems 20 (01), 43-49, 2011
7 2011 Surface anisotropy of CrxN1− x films prepared on an inner wall by magnetic sputtering F Zeng, R Liang, XW Li, SP Wen, Y Gao, YL Gu, F Pan
Applied surface science 253 (18), 7563-7568, 2007
6 2007 Preparation of ceramic foam filters via direct foaming H Lin, J Yang, L Tang, X Xi, R Liang, Y Huang
Xiyou Jinshu Cailiao yu Gongcheng(Rare Metal Materials and Engineering) 36 …, 2007
4 2007 Type-I QW cascade diode lasers with 830 mW of CW power at 3 µm L Shterengas, R Liang, T Hosoda, G Kipshidze, G Belenky, SS Bowman, ...
Novel In-Plane Semiconductor Lasers XIV 9382, 123-131, 2015
3 2015 Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 µm spectral region J Chen, T Hosoda, G Tsvid, R Liang, D Westerfeld, G Kipshidze, ...
Laser Technology for Defense and Security VI 7686, 164-168, 2010
3 2010