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Lida Ansari
Lida Ansari
Senior Research Scientist, Tyndall National Institute, University College Cork
Email verificata su tyndall.ie - Home page
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Citata da
Citata da
Anno
Simulation of junctionless Si nanowire transistors with 3 nm gate length
L Ansari, B Feldman, G Fagas, JP Colinge, JC Greer
Applied Physics Letters 97 (6), 2010
1262010
Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C
L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ...
npj 2D Materials and Applications 3 (1), 33, 2019
792019
A proposed confinement modulated gap nanowire transistor based on a metal (tin)
L Ansari, G Fagas, JP Colinge, JC Greer
Nano letters 12 (5), 2222-2227, 2012
632012
Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe2 Field‐Effect Transistors
A Grillo, E Faella, A Pelella, F Giubileo, L Ansari, F Gity, PK Hurley, ...
Advanced Functional Materials 31 (43), 2105722, 2021
612021
Insights into Multilevel Resistive Switching in Monolayer MoS2
S Bhattacharjee, E Caruso, N McEvoy, C Ó Coileáin, K O’Neill, L Ansari, ...
ACS applied materials & interfaces 12 (5), 6022-6029, 2020
602020
Rhenium-doped MoS2 films
T Hallam, S Monaghan, F Gity, L Ansari, M Schmidt, C Downing, ...
Applied Physics Letters 111 (20), 2017
512017
Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films
F Gity, L Ansari, M Lanius, P Schüffelgen, G Mussler, D Grützmacher, ...
Applied physics letters 110 (9), 2017
392017
Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering
D Dastan, K Shan, A Jafari, F Gity, XT Yin, Z Shi, ND Alharbi, BA Reshi, ...
Applied Physics A 128 (5), 400, 2022
352022
Imaging and identification of point defects in PtTe2 (https://doi.org/10.1038/s41699-020-00196-8)
K Zhussupbekov, L Ansari, JB McManus, A Zhussupbekova, IV Shvets, ...
npj 2D Materials and Applications 5 (14), 1-10, 2021
30*2021
Subthreshold behavior of junctionless silicon nanowire transistors from atomic scale simulations
L Ansari, B Feldman, G Fagas, JP Colinge, JC Greer
Solid-state electronics 71, 58-62, 2012
282012
Metal-semimetal Schottky diode relying on quantum confinement
F Gity, L Ansari, C König, GA Verni, JD Holmes, B Long, M Lanius, ...
Microelectronic Engineering 195, 21-25, 2018
202018
Gas sensing selectivity of SnO2-xNiO sensors for homogeneous gases and its selectivity mechanism: Experimental and theoretical studies
XT Yin, D Dastan, F Gity, J Li, Z Shi, ND Alharbi, Y Liu, XM Tan, XC Gao, ...
Sensors and Actuators A: Physical 354, 114273, 2023
172023
Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires
L Ansari, G Fagas, JC Greer
Applied Physics Letters 105 (12), 2014
162014
First principle-based analysis of single-walled carbon nanotube and silicon nanowire junctionless transistors
L Ansari, B Feldman, G Fagas, CM Lacambra, MG Haverty, KJ Kuhn, ...
IEEE transactions on nanotechnology 12 (6), 1075-1081, 2013
152013
A sub kBT/q semimetal nanowire field effect transistor
L Ansari, G Fagas, F Gity, JC Greer
Applied Physics Letters 109 (6), 2016
142016
An equivalent circuit model for analyzing separate confinement heterostructure quantum well laser diodes including chirp and carrier transport effects
A Zarifkar, L Ansari, MK Moravvej-Farshi
Fiber and Integrated Optics 28 (4), 249-267, 2009
142009
Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm
J MacHale, F Meaney, N Kennedy, L Eaton, G Mirabelli, M White, ...
Journal of Applied Physics 125 (22), 2019
132019
Transport properties and electrical device characteristics with the TiMeS computational platform: Application in silicon nanowires
D Sharma, L Ansari, B Feldman, M Iakovidis, JC Greer, G Fagas
Journal of Applied Physics 113 (20), 2013
122013
Ó.; Cullen, CP
L Ansari, S Monaghan, N McEvoy, C Coileáin
Lin, J, 1-8, 0
10
Structural and electrical characterisation of PtS from H2S-converted Pt
S Monaghan, EM Coleman, L Ansari, J Lin, A Buttimer, PA Coleman, ...
Applied Materials Today 25, 101163, 2021
92021
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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