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Mehmet KASAP
Mehmet KASAP
Steuerberater / CPA
Verified email at mehmetkasap.com.tr - Homepage
Title
Cited by
Cited by
Year
Electrical properties of TiO2 thin films
A Yildiz, SB Lisesivdin, M Kasap, D Mardare
Journal of Non-Crystalline Solids 354 (45-46), 4944-4947, 2008
1512008
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
R Tülek, A Ilgaz, S Gökden, A Teke, MK Öztürk, M Kasap, S Özçelik, ...
Journal of Applied Physics 105 (1), 2009
1162009
The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates
E Arslan, S Bütün, SB Lisesivdin, M Kasap, S Ozcelik, E Ozbay
Journal of Applied Physics 103 (10), 2008
842008
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
SB Lisesivdin, A Yildiz, N Balkan, M Kasap, S Ozcelik, E Ozbay
Journal of Applied Physics 108 (1), 2010
782010
Crossover from nearest-neighbor hopping conduction to Efros–Shklovskii variable-range hopping conduction in hydrogenated amorphous silicon films
A Yildiz, N Serin, T Serin, M Kasap
Japanese Journal of Applied Physics 48 (11R), 111203, 2009
782009
Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (1 0 0) Schottky barrier diodes
S Acar, S Karadeniz, N Tuǧluoǧlu, AB Selcuk, M Kasap
Applied surface science 233 (1-4), 373-381, 2004
782004
Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0. 25Ga0. 75N/GaN heterostructures
SB Lisesivdin, S Acar, M Kasap, S Ozcelik, S Gokden, E Ozbay
Semiconductor science and Technology 22 (5), 543, 2007
752007
Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film
A Yildiz, SB Lisesivdin, M Kasap, D Mardare
Physica B: Condensed Matter 404 (8-11), 1423-1426, 2009
672009
The thickness effect on the electrical conduction mechanism in titanium oxide thin films
A Yildiz, N Serin, M Kasap, T Serin, D Mardare
Journal of Alloys and Compounds 493 (1-2), 227-232, 2010
542010
Electron–Electron Interactions in Sb-Doped SnO2 Thin Films
T Serin, A Yildiz, N Serin, N Yildirim, F Özyurt, M Kasap
Journal of electronic materials 39, 1152-1158, 2010
482010
Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition
S Acar, SB Lisesivdin, M Kasap, S Oezcelik, E Özbay
Thin Solid Films 516 (8), 2041-2044, 2008
372008
High temperature variable-range hopping conductivity in undoped TiO2 thin film
A Yildiz, SB Lisesivdin, M Kasap, D Mardare
NATL INST OPTOELECTRONICS, 2007
362007
Electronic transport characterization of AlGaN∕ GaN heterostructures using quantitative mobility spectrum analysis
SB Lisesivdin, A Yildiz, S Acar, M Kasap, S Ozcelik, E Ozbay
Applied physics letters 91 (10), 2007
352007
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
SB Lisesivdin, N Balkan, O Makarovsky, A Patane, A Yildiz, MD Caliskan, ...
Journal of Applied Physics 105 (9), 2009
332009
Growth parameter investigation of Al0. 25Ga0. 75N/GaN/AlN heterostructures with Hall effect measurements
SB Lisesivdin, S Demirezen, MD Caliskan, A Yildiz, M Kasap, S Ozcelik, ...
Semiconductor science and Technology 23 (9), 095008, 2008
302008
Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors
SB Lisesivdin, A Yildiz, M Kasap
NATL INST OPTOELECTRONICS, 2007
282007
Stokes shift and band gap bowing in InxGa1-xN (0.060<= x<= 0.105) grown by metalorganic vapour phase epitaxy
A Yildiz, F Dagdelen, S Acar, SB Lisesivdin, M Kasap, Y Aydogdu, M Bosi
POLISH ACAD SCIENCES INST PHYSICS, 2008
242008
The relationship between the surface morphology and chemical composition of gunshot residue particles
I Kara, SB Lisesivdin, M Kasap, E Er, U Uzek
Journal of forensic sciences 60 (4), 1030-1033, 2015
222015
Study on growth and characterizations of GaxIn1−xP/GaAs solar cell structure
B Kınacı, Y Özen, T Asar, SŞ Çetin, T Memmedli, M Kasap, S Özçelik
Journal of Materials Science: Materials in Electronics 24, 3269-3274, 2013
222013
Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD
O Kelekci, P Tasli, SS Cetin, M Kasap, S Ozcelik, E Ozbay
Current Applied Physics 12 (6), 1600-1605, 2012
222012
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