Henrique Leonel Gomes

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Fabio BiscariniIstituto Italiano di Tecnologia & Professor of Chemistry, Università di Modena e Reggio EmiliaEmail verificata su iit.it
Paulo R. F. RochaAssociate Professor, Department of Life Sciences, University of CoimbraEmail verificata su uc.pt
M.C.R. Medeiros; C.R. MedeirosUniversidade de Coimbra - Instituto de TelecomunicaçõesEmail verificata su deec.uc.pt
Eloi RamonBarcelona Microelectronics Institute IMB-CNM (CSIC)Email verificata su uab.cat
Asal KiazadehAssociate researcherEmail verificata su fct.unl.pt
Carme Martínez-Domingo, PhDInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC)Email verificata su icmab.es
Reinhard R. BaumannTU ChemnitzEmail verificata su mb.tu-chemnitz.de
Ana L G MestrePhD studentEmail verificata su ualg.pt
Pedro InácioCentro de Eletrónica, Opto-Eletrónica e Telecomunicações, Universidade do Algarve, Faro, Portugal.Email verificata su ualg.pt
mauro murgiaCNR-ISMNEmail verificata su cnr.it
Edsger SmitsTNOEmail verificata su tno.nl
Elvira Fortunatoi3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVAEmail verificata su fct.unl.pt
Rodrigo Ferrão Paiva MartinsFull Professor at FCT UNL, Caparica, PortugalEmail verificata su fct.unl.pt
Pedro BarquinhaAssociate Professor, FCT-NOVAEmail verificata su fct.unl.pt
Ines AraujoFaculty of Medicine and Biomedical Sciences, Algarve Biomedical Center Research Institute (ABC-RIEmail verificata su ualg.pt
RH FriendUniversity of CambridgeEmail verificata su cam.ac.uk
Sanaz AsgarifarPhD, Hardware designer, Bosch Car MultimediaEmail verificata su pt.bosch.com
Jordi CarrabinaUniversitat Autònoma de barcelonaEmail verificata su uab.cat
Veit WagnerProfessor of Physics, Jacobs University Bremen, Department of Physics & Earth SciencesEmail verificata su jacobs-university.de
Lluís TerésInvestigador CSICEmail verificata su imb-cnm.csic.es

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Henrique Leonel Gomes

Universidade de Coimbra /Instituto de Telecomunicações

Email verificata su uc.pt - Home page

Organic Electronics Bioelectronics Device Physics Electrical Characterization Resistive Switching Memories


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors SGJ Mathijssen, M Colle, H Gomes, ECP Smits, B de Boer, I McCulloch, ... Advanced materials 19 (19), 2785-+, 2007	288	2007
Gate-bias stress in amorphous oxide semiconductors thin-film transistors ME Lopes, HL Gomes, MCR Medeiros, P Barquinha, L Pereira, ... Applied Physics Letters 95 (6), 2009	264	2009
Bias-induced threshold voltages shifts in thin-film organic transistors HL Gomes, P Stallinga, F Dinelli, M Murgia, F Biscarini, DM De Leeuw, ... Applied Physics Letters 84 (16), 3184-3186, 2004	254	2004
Reproducible resistive switching in nonvolatile organic memories F Verbakel, SCJ Meskers, RAJ Janssen, HL Gomes, M Cölle, M Büchel, ... Applied Physics Letters 91 (19), 2007	146	2007
Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly (3-methylthiophene) DM Taylor, HL Gomes, AE Underhill, S Edge, PI Clemenson Journal of Physics D: Applied Physics 24 (11), 2032, 1991	144	1991
Electrical characterization of the rectifying contact between aluminium and electrodeposited poly (3-methylthiophene) DM Taylor, HL Gomes Journal of Physics D: Applied Physics 28 (12), 2554, 1995	114	1995
Electrical instabilities in organic semiconductors caused by trapped supercooled water HL Gomes, P Stallinga, M Cölle, DM De Leeuw, F Biscarini Applied Physics Letters 88 (8), 2006	107	2006
All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis E Sowade, E Ramon, KY Mitra, C Martínez-Domingo, M Pedró, J Pallarès, ... Scientific reports 6 (1), 33490, 2016	106	2016
Electronic transport in field-effect transistors of sexithiophene P Stallinga, HL Gomes, F Biscarini, M Murgia, DM De Leeuw Journal of applied physics 96 (9), 5277-5283, 2004	104	2004
Electrochemical noise and impedance of Au electrode/electrolyte interfaces enabling extracellular detection of glioma cell populations PRF Rocha, P Schlett, U Kintzel, V Mailänder, LKJ Vandamme, G Zeck, ... Scientific reports 6 (1), 34843, 2016	97	2016
Up-scaling of the manufacturing of all-inkjet-printed organic thin-film transistors: Device performance and manufacturing yield of transistor arrays E Sowade, KY Mitra, E Ramon, C Martinez-Domingo, F Villani, F Loffredo, ... Organic Electronics 30, 237-246, 2016	88	2016
Electrical characterization of organic based transistors: stability issues HL Gomes, P Stallinga, F Dinelli, M Murgia, F Biscarini, DM de Leeuw, ... Polymers for Advanced technologies 16 (2‐3), 227-231, 2005	72	2005
Interface state mapping in a Schottky barrier of the organic semiconductor terrylene P Stallinga, HL Gomes, M Murgia, K Müllen organic Electronics 3 (1), 43-51, 2002	72	2002
Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors A Kiazadeh, HL Gomes, P Barquinha, J Martins, A Rovisco, JV Pinto, ... Applied Physics Letters 109 (5), 2016	70	2016
Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods HL Gomes, P Stallinga, H Rost, AB Holmes, MG Harrison, RH Friend Applied physics letters 74 (8), 1144-1146, 1999	55	1999
Switching in polymeric resistance random-access memories (RRAMS) HL Gomes, ARV Benvenho, DM De Leeuw, M Cölle, P Stallinga, ... Organic Electronics 9 (1), 119-128, 2008	49	2008
Trap states as an explanation for the Meyer–Neldel rule in semiconductors P Stallinga, HL Gomes Organic Electronics 6 (3), 137-141, 2005	47	2005
Memristors using solution-based IGZO nanoparticles J Rosa, A Kiazadeh, L Santos, J Deuermeier, R Martins, HL Gomes, ... ACS omega 2 (11), 8366-8372, 2017	46	2017
Ultralow power microfuses for write-once read-many organic memory elements BC de Brito, ECP Smits, PA van Hal, TCT Geuns, B de Boer, ... Advanced materials 20 (19), 3750-+, 2008	43	2008
Thin-film field-effect transistors: The effects of traps on the bias and temperature dependence of field-effect mobility, including the Meyer–Neldel rule P Stallinga, HL Gomes Organic Electronics 7 (6), 592-599, 2006	42	2006

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