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Fiacre Rougieux
Fiacre Rougieux
Senior lecturer, The University of New South Wales
Verified email at unsw.edu.au - Homepage
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Cited by
Cited by
Year
Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon
D Macdonald, F Rougieux, A Cuevas, B Lim, J Schmidt, M Di Sabatino, ...
Journal of Applied Physics 105 (9), 093704-093704-7, 2009
1782009
Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence
HT Nguyen, FE Rougieux, B Mitchell, D Macdonald
Journal of Applied Physics 115 (4), 2014
1142014
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)-Rapid Research Letters 10 (6), 443-447, 2016
1072016
Generation and annihilation of boron-oxygen-related recombination centers in compensated p-and n-type silicon
B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt
Journal of Applied Physics 108 (10), 103722, 2010
962010
A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of Applied Physics 117 (4), 2015
932015
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
852016
Hydrogen-induced degradation: Explaining the mechanism behind light-and elevated temperature-induced degradation in n-and p-type silicon
D Chen, P Hamer, M Kim, C Chan, AC nee Wenham, F Rougieux, ...
Solar Energy Materials and Solar Cells 207, 110353, 2020
742020
Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
M Forster, E Fourmond, FE Rougieux, A Cuevas, R Gotoh, K Fujiwara, ...
Applied Physics Letters 100 (4), 2012
722012
Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon
FE Rougieux, D Macdonald, A Cuevas, S Ruffell, J Schmidt, B Lim, ...
Journal of Applied Physics 108 (1), 2010
702010
Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers
NE Grant, FE Rougieux, D Macdonald, J Bullock, Y Wan
Journal of Applied Physics 117 (5), 2015
692015
Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review
FE Rougieux, C Sun, D Macdonald
Solar Energy Materials and Solar Cells 187, 263-272, 2018
482018
Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
FE Rougieux, B Lim, J Schmidt, M Forster, D Macdonald, A Cuevas
Journal of Applied Physics 110 (6), 2011
482011
Reassessment of the recombination parameters of chromium in n-and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of applied physics 115 (21), 2014
432014
Accurate measurement of the formation rate of iron–boron pairs in silicon
J Tan, D Macdonald, F Rougieux, A Cuevas
Semiconductor Science and Technology 26 (5), 055019, 2011
432011
Micrometer-scale deep-level spectral photoluminescence from dislocations in multicrystalline silicon
HT Nguyen, FE Rougieux, F Wang, H Tan, D Macdonald
IEEE Journal of Photovoltaics 5 (3), 799-804, 2015
402015
Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon
FE Rougieux, NE Grant, C Barugkin, D Macdonald, JD Murphy
IEEE Journal of Photovoltaics 5 (2), 495-498, 2014
382014
Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
V Raj, TS dos Santos, F Rougieux, K Vora, M Lysevych, L Fu, S Mokkapati, ...
Journal of Physics D: Applied Physics 51 (39), 395301, 2018
362018
Compensation Engineering for Silicon Solar Cells
A Cuevas, M Forster, F Rougieux, D Macdonald
Energy Procedia 15, 67-77, 2012
352012
Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon
M Forster, A Cuevas, E Fourmond, FE Rougieux, M Lemiti
Journal of Applied Physics 111 (4), 2012
342012
Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers
R Basnet, FE Rougieux, C Sun, SP Phang, C Samundsett, R Einhaus, ...
IEEE Journal of Photovoltaics 8 (4), 990-996, 2018
322018
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