| O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate K Li, Z Liu, M Tang, M Liao, D Kim, H Deng, AM Sanchez, R Beanland, ... Journal of Crystal Growth 511, 56-60, 2019 | 37 | 2019 |
| Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001) K Li, J Yang, Y Lu, M Tang, P Jurczak, Z Liu, X Yu, JS Park, H Deng, H Jia, ... Advanced Optical Materials 8 (22), 2000970, 2020 | 27 | 2020 |
| The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers H Deng, L Jarvis, Z Li, Z Liu, M Tang, K Li, J Yang, B Maglio, S Shutts, ... Journal of Physics D: Applied Physics 55 (21), 215105, 2022 | 9 | 2022 |
| Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates J Yang, K Li, H Jia, H Deng, X Yu, P Jurczak, JS Park, S Pan, W Li, ... Nanoscale 14 (46), 17247-17253, 2022 | 9 | 2022 |
| Theoretical analysis and modelling of degradation for III–V lasers on Si J Liu, M Tang, H Deng, S Shutts, L Wang, PM Smowton, C Jin, S Chen, ... Journal of Physics D: Applied Physics 55 (40), 404006, 2022 | 8 | 2022 |
| Impact of ex-situ annealing on strain and composition of MBE grown GeSn H Jia, P Jurczak, J Yang, M Tang, K Li, H Deng, M Dang, S Chen, H Liu Journal of Physics D: Applied Physics 53 (48), 485104, 2020 | 8 | 2020 |
| The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix H Jia, J Yang, M Tang, W Li, P Jurczak, X Yu, T Zhou, JS Park, K Li, ... Journal of Physics D: Applied Physics 55 (49), 494002, 2022 | 4 | 2022 |
| III-V Quantum Dot Lasers Monolithically Grown on Silicon H Deng, K Li, M Tang, J Wu, M Liao, Y Lu, S Pan, S Chen, A Seeds, H Liu Optical Fiber Communication Conference, W4E. 1, 2019 | 4 | 2019 |
| Design and characterisation of multi-mode interference reflector lasers for integrated photonics FT Albeladi, S Gillgrass, J Nabialek, P Mishra, R Forrest, TR Albiladi, ... Journal of Physics D: Applied Physics 56 (38), 384001, 2023 | 2 | 2023 |
| Co-doped 1.3 µm InAs Quantum Dot Lasers with high gain and low threshold current B Maglio, L Jarvis, CP Allford, S Gillgrass, A Enderson, S Shutts, H Deng, ... 2022 IEEE Photonics Conference (IPC), 1-2, 2022 | 2 | 2022 |
| GaAs compounds heteroepitaxy on silicon for opto and nano electronic applications M Martin, T Baron, Y Bogumulowicz, H Deng, K Li, M Tang, H Liu Post-transition metals, 2020 | 2 | 2020 |
| High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy M Mtunzi, H Jia, Y Hou, X Yu, H Zeng, J Yang, X Yan, I Skandalos, ... Journal of Physics D: Applied Physics 57 (25), 255101, 2024 | 1 | 2024 |
| Optically enhanced single-and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications X Yu, H Jia, C Dear, J Yuan, H Deng, M Tang, H Liu Journal of Physics D: Applied Physics 56 (28), 285101, 2023 | 1 | 2023 |
| 1.3-μm InAs Quantum Dot Lasers with P-type modulation and direct N-type co-doping L Jarvis, B Maglio, CP Allford, S Gillgrass, A Enderson, S Shutts, H Deng, ... Conference Digest-IEEE International Semiconductor Laser Conference 2022, 2022 | 1 | 2022 |
| Si-Based 1.3 μm InAs/GaAs QD Lasers H Deng, J Yang, H Jia, M Tang, B Maglio, L Jarvis, S Shutts, PM Smowton, ... 2022 IEEE Photonics Conference (IPC), 1-2, 2022 | 1 | 2022 |
| Effects of phosphorous and antimony doping on thin Ge layers grown on Si X Yu, H Jia, J Yang, MG Masteghin, H Beere, M Mtunzi, H Deng, S Huo, ... Scientific Reports 14 (1), 7969, 2024 | | 2024 |
| From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics J Yang, H Deng, JS Park, S Chen, M Tang, H Liu IntechOpen, 2023 | | 2023 |
| Low-loss III-V photonics and high efficiency grating couplers incorporating low-index AlOx layers FT Albeladi, S Gillgrass, J Nabialek, C Hodges, M Tang, H Deng, HY Liu, ... 2023 IEEE Photonics Conference (IPC), 1-2, 2023 | | 2023 |
| The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates M Dang, H Deng, S Huo, RR Juluri, AM Sanchez, AJ Seeds, H Liu, ... Journal of Physics D: Applied Physics 56 (40), 405108, 2023 | | 2023 |
| Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration Y Hou, I Skandalos, M Tang, H Jia, H Deng, X Yu, Y Noori, ... Journal of Luminescence 258, 119799, 2023 | | 2023 |
