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Stewart Rauch
Stewart Rauch
GlobalFoundries (retired)
Email verificata su ieee.org
Titolo
Citata da
Citata da
Anno
300-mm monolithic silicon photonics foundry technology
K Giewont, K Nummy, FA Anderson, J Ayala, T Barwicz, Y Bian, ...
IEEE Journal of Selected Topics in Quantum Electronics 25 (5), 1-11, 2019
2912019
Extreme Environment Electronics
J Cressler, A Mantooth
291*2012
Reliability wearout mechanisms in advanced CMOS technologies
AW Strong, EY Wu, RP Vollertsen, J Sune, G La Rosa, TD Sullivan, ...
John Wiley & Sons, 2009
2672009
Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM
DF Heidel, PW Marshall, JA Pellish, KP Rodbell, KA LaBel, JR Schwank, ...
IEEE Transactions on Nuclear Science 56 (6), 3499-3504, 2009
1972009
Bias Temperature Instability for Devices and Circuits
T Grasser, S Rauch, et al.
1642013
Review and reexamination of reliability effects related to NBTI-induced variations
SE Rauch
IEEE Trans. Device Mater. Reliab. 7 (4), 524-530, 2007
1642007
The energy-driven paradigm of NMOSFET hot-carrier effects
SE Rauch, G LaRosa
IEEE Transactions on Device and Materials Reliability 5 (4), 701-705, 2005
1562005
The energy-driven paradigm of NMOSFET hot-carrier effects
SE Rauch, G LaRosa
2005 International Reliability Physics Symposium, 708-709, 2005
1562005
NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies
G La Rosa, F Guarin, S Rauch, A Acovic, J Lukaitis, E Crabbe
1997 IEEE International Reliability Physics Symposium Proceedings. 35th …, 1997
1251997
Role of ee scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high VGS conditions
SE Rauch, GL Rosa, FJ Guarin
IEEE Transactions of device and Material Reliability 1 (2), 113-119, 2001
1142001
Hot Carrier Degradation in Semiconductor Devices
T Grasser, S Rauch, et al
1132014
Ring oscillator design for MOSFET device reliability investigations and its use for in-line monitoring
G La Rosa, F Guarin, K Kolvenbach, S Rauch
US Patent 6,476,632, 2002
1102002
The statistics of NBTI-induced VT and β mismatch shifts in pMOSFETs
SE Rauch III
Device and Materials Reliability, IEEE Transactions on 2 (4), 89-93, 2002
109*2002
Impact of EE scattering to the hot carrier degradation of deep submicron NMOSFETs
SE Rauch, FJ Guarin, G LaRosa
IEEE Electron Device Letters 19 (12), 463-465, 1998
1071998
Impact of NBTI induced statistical variation to SRAM cell stability
G La Rosa, WL Ng, S Rauch, R Wong, J Sudijono
2006 IEEE International Reliability Physics Symposium Proceedings, 274-282, 2006
642006
A high-performance 0.08/spl mu/m CMOS
L Su, S Subbanna, E Crabbe, P Agnello, E Nowak, R Schulz, S Rauch, ...
1996 Symposium on VLSI Technology. Digest of Technical Papers, 12-13, 1996
641996
High performance 50 nm CMOS devices for microprocessor and embedded processor core applications
SF Huang, CY Lin, YS Huang, T Schafbauer, M Eller, YC Cheng, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
542001
CMOS hot carrier: From physics to end of life projections, and qualification
S Rauch, GL Rosa
International Reliability Physics Symposium (IRPS) Tutorial, 2010
372010
A high performance 0.13/spl mu/m SOI CMOS technology with Cu interconnects and low-k BEOL dielectric
P Smeys, V McGahay, I Yang, J Adkisson, K Beyer, O Bula, Z Chen, ...
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000
362000
Line monitoring of negative bias temperature instabilities by hole injection methods
G La Rosa, FJ Guarin, SE Rauch III
US Patent 6,521,469, 2003
332003
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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