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Giovanni Maria Paolucci
Giovanni Maria Paolucci
Email verificata su micron.com
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Anno
Characterization and modeling of temperature effects in 3-D NAND flash arrays—Part I: Polysilicon-induced variability
D Resnati, A Mannara, G Nicosia, GM Paolucci, P Tessariol, AS Spinelli, ...
IEEE Transactions on Electron Devices 65 (8), 3199-3206, 2018
612018
Cycling-induced charge trapping/detrapping in Flash memories—Part I: Experimental evidence
D Resnati, G Nicosia, GM Paolucci, A Visconti, CM Compagnoni
IEEE Transactions on Electron Devices 63 (12), 4753-4760, 2016
312016
Characterization and modeling of temperature effects in 3-D NAND Flash arrays—Part II: Random telegraph noise
G Nicosia, A Mannara, D Resnati, GM Paolucci, P Tessariol, AS Spinelli, ...
IEEE Transactions on Electron Devices 65 (8), 3207-3213, 2018
302018
A semi-analytical model for macaroni MOSFETs with application to vertical Flash memories
GM Paolucci, AS Spinelli, CM Compagnoni, P Tessariol
IEEE Transactions on Electron Devices 63 (5), 1871-1876, 2016
282016
Working principles of a DRAM cell based on gated-thyristor bistability
H Mulaosmanovic, GM Paolucci, CM Compagnoni, N Castellani, ...
IEEE Electron Device Letters 35 (9), 921-923, 2014
272014
Revisiting Charge Trapping/Detrapping in Flash Memories From a Discrete and Statistical Standpoint—Part I: Instabilities
GM Paolucci, CM Compagnoni, C Miccoli, AS Spinelli, AL Lacaita, ...
IEEE Transactions on Electron Devices 61 (8), 2802-2810, 2014
242014
Temperature activation of the string current and its variability in 3-D NAND Flash arrays
D Resnati, A Mannara, G Nicosia, GM Paolucci, P Tessariol, AL Lacaita, ...
2017 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2017
232017
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays
C Miccoli, GM Paolucci, CM Compagnoni, AS Spinelli, A Goda
2015 IEEE International Reliability Physics Symposium, MY. 9.1-MY. 9.6, 2015
222015
Resolving discrete emission events: A new perspective for detrapping investigation in NAND Flash memories
C Miccoli, J Barber, CM Compagnoni, GM Paolucci, J Kessenich, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3B. 1.1-3B. 1.6, 2013
222013
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint—Part II: On-field operation and distributed-cycling effects
GM Paolucci, CM Compagnoni, C Miccoli, AS Spinelli, AL Lacaita, ...
IEEE Transactions on Electron Devices 61 (8), 2811-2819, 2014
212014
Impact of temperature on the amplitude of RTN fluctuations in 3-D NAND Flash cells
G Nicosia, A Mannara, D Resnati, GM Paolucci, P Tessariol, AL Lacaita, ...
2017 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2017
182017
Fitting Cells Into a NarrowInterval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array
GM Paolucci, CM Compagnoni, AS Spinelli, AL Lacaita, A Goda
IEEE Transactions on Electron Devices 62 (5), 1491-1497, 2015
162015
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors
GM Paolucci, CM Compagnoni, N Castellani, G Carnevale, P Fantini, ...
IEEE electron device letters 34 (5), 629-631, 2013
152013
Cycling-induced charge trapping/detrapping in Flash memories—Part II: Modeling
D Resnati, G Nicosia, GM Paolucci, A Visconti, CM Compagnoni
IEEE Transactions on Electron Devices 63 (12), 4761-4768, 2016
142016
A single-electron analysis of NAND Flash memory programming
G Nicosia, GM Paolucci, CM Compagnoni, D Resnati, C Miccoli, ...
2015 IEEE International Electron Devices Meeting (IEDM), 14.8. 1-14.8. 4, 2015
122015
Investigation of the turn-ON of T-RAM cells under transient conditions
H Mulaosmanovic, CM Compagnoni, N Castellani, GM Paolucci, ...
IEEE Transactions on Electron Devices 62 (4), 1170-1176, 2015
112015
First detection of single-electron charging of the floating gate of NAND flash memory cells
CM Compagnoni, GM Paolucci, C Miccoli, AS Spinelli, AL Lacaita, ...
IEEE Electron Device Letters 36 (2), 132-134, 2014
102014
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories
GM Paolucci, CM Compagnoni, C Miccoli, M Bertuccio, S Beltrami, ...
2014 IEEE International Reliability Physics Symposium, 2E. 2.1-2E. 2.6, 2014
92014
String current in decananometer NAND Flash arrays: A compact-modeling investigation
GM Paolucci, C Miccoli, CM Compagnoni, AS Spinelli, AL Lacaita
IEEE transactions on electron devices 59 (9), 2331-2337, 2012
92012
A step ahead toward a new microscopic picture for charge trapping/detrapping in Flash memories
D Resnati, CM Compagnoni, GM Paolucci, C Miccoli, J Barber, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 6C-3-1-6C-3-7, 2016
72016
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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