Daniele Garbin
Cited by
Cited by
HfO₂-Based OxRAM Devices as Synapses for Convolutional Neural Networks
D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ...
Electron Devices, IEEE Transactions on 62 (8), 2494-2501, 2015
Resistive Memories for Ultra-Low-Power embedded computing design
E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanović, D Garbin, ...
Electron Devices Meeting (IEDM), 2014 IEEE International, 6.3. 1-6.3. 4, 2014
Variability-tolerant Convolutional Neural Network for Pattern Recognition Applications based on OxRAM Synapses
D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ...
Electron Devices Meeting (IEDM), 2014 IEEE International, 28.4. 1-28.4. 4, 2014
Spiking neural networks based on OxRAM synapses for real-time unsupervised spike sorting
T Werner, E Vianello, O Bichler, D Garbin, D Cattaert, B Yvert, B De Salvo, ...
Frontiers in neuroscience 10, 474, 2016
A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTezphase change material
HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, ...
2012 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2012
Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles
S Clima, D Garbin, K Opsomer, NS Avasarala, W Devulder, I Shlyakhov, ...
physica status solidi (RRL)–Rapid Research Letters 14 (5), 1900672, 2020
Phase transitions in Ga–Sb phase change alloys
S Raoux, AK König, HY Cheng, D Garbin, RW Cheek, JL Jordan‐Sweet, ...
physica status solidi (b) 249 (10), 1999-2004, 2012
Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance
D Garbin, W Devulder, R Degraeve, GL Donadio, S Clima, K Opsomer, ...
2019 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2019
Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications
G Piccolboni, G Molas, JM Portal, R Coquand, M Bocquet, D Garbin, ...
2015 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2015
Design-technology co-optimization for OxRRAM-based synaptic processing unit
A Mallik, D Garbin, A Fantini, D Rodopoulos, R Degraeve, J Stuijt, AK Das, ...
2017 Symposium on VLSI Technology, T178-T179, 2017
Impact of PCM resistance-drift in neuromorphic systems and drift-mitigation strategy
M Suri, D Garbin, O Bichler, D Querlioz, D Vuillaume, C Gamrat, ...
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013
Resistive memory variability: A simplified trap-assisted tunneling model
D Garbin, E Vianello, Q Rafhay, M Azzaz, P Candelier, B DeSalvo, ...
Solid State Electronics 116, 126-132, 2016
Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors
Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ...
2019 Symposium on VLSI Technology, T238-T239, 2019
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme
F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ...
2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019
D Garbin, D Rodopoulos, P Debacker, P Raghavan
US Patent App. 15/820,239, 2018
Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors
Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ...
IEEE Electron Device Letters 40 (8), 1269-1272, 2019
Probabilistic neuromorphic system using binary phase-change memory (PCM) synapses: Detailed power consumption analysis
D Garbin, M Suri, O Bichler, D Querlioz, C Gamrat, B DeSalvo
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on, 91-94, 2013
On the impact of OxRAM-based synapses variability on convolutional neural networks performance
D Garbin, E Vianello, O Bichler, M Azzaz, Q Rafhay, P Candelier, ...
Nanoscale Architectures (NANOARCH), 2015 IEEE/ACM International Symposium on …, 2015
GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator
Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ...
IEEE Electron Device Letters 41 (2), 228-231, 2019
Improvement of performances HfO 2-based RRAM from elementary cell to 16kb demonstrator by introduction of thin layer of Al 2 O 3
M Azzaz, A Benoist, E Vianello, D Garbin, E Jalaguier, C Cagli, C Charpin, ...
Solid-State Electronics 125, 182-188, 2016
The system can't perform the operation now. Try again later.
Articles 1–20