| Intrinsic electron traps in atomic-layer deposited HfO2 insulators F Cerbu, O Madia, DV Andreev, S Fadida, M Eizenberg, L Breuil, ... Applied Physics Letters 108 (22), 2016 | 52 | 2016 |
| Hf-based high-k dielectrics for p-Ge MOS gate stacks S Fadida, F Palumbo, L Nyns, D Lin, S Van Elshocht, M Caymax, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 22 | 2014 |
| Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices O Zonensain, S Fadida, I Fisher, J Gao, K Chattopadhyay, G Harm, ... Applied Physics Letters 106 (8), 2015 | 13 | 2015 |
| Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks S Fadida, M Eizenberg, L Nyns, S Van Elshocht, M Caymax Microelectronic engineering 88 (7), 1557-1559, 2011 | 13 | 2011 |
| Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack S Fadida, P Shekhter, D Cvetko, L Floreano, A Verdini, L Nyns, ... Journal of Applied Physics 116 (16), 2014 | 11 | 2014 |
| Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks F Aguirre, S Pazos, FRM Palumbo, S Fadida, R Winter, M Eizenberg Journal of Applied Physics 123 (13), 2018 | 5 | 2018 |
| Effect of remote oxygen scavenging on electrical properties of Ge-based metal–oxide–semiconductor capacitors S Fadida, L Nyns, S Van Elshocht, M Eizenberg Journal of Electronic Materials 46, 386-392, 2017 | 5 | 2017 |
| Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices O Zonensain, S Fadida, I Fisher, J Gao, M Danek, M Eizenberg Journal of Applied Physics 123 (3), 2018 | 3 | 2018 |
| Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks FL Aguirre, SM Pazos, F Palumbo, S Fadida, R Winter, M Eizenberg 2018 IEEE International Reliability Physics Symposium (IRPS), P-GD. 3-1-P-GD …, 2018 | 1 | 2018 |
| Metal-and oxide-related hydrogen-induced dipoles at the Pt/HfO2 interface NM Kolomiiets, VV Afanas' ev, A Stesmans, S Fadida, M Eizenberg Microelectronic Engineering 178, 304-307, 2017 | 1 | 2017 |
| Ti as a reactive gate electrode on high-k/p-Ge MOS capacitors S Fadida, L Nyns, D Lin, S Van Elshocht, M Caymax, M Eizenberg | | 2014 |
| Correlation between current-voltage measurements and the barrier height determined by XPS in Ge p-MOS capacitors S Fadida, F Palumbo, L Nyns, D Lin, S Van Elshocht, M Caymax, ... | | 2013 |
