| Bipolar integrated circuits in SiC for extreme environment operation CM Zetterling, A Hallén, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ... Semiconductor Science and Technology 32 (3), 034002, 2017 | 39 | 2017 |
| Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS M Usman, M Arshad, SS Suvanam, A Hallén Journal of Physics D: Applied Physics 51 (10), 105111, 2018 | 29 | 2018 |
| High gamma ray tolerance for 4H-SiC bipolar circuits SS Suvanam, SI Kuroki, L Lanni, R Hadayati, T Ohshima, T Makino, ... IEEE Transactions on Nuclear Science 64 (2), 852-858, 2016 | 20 | 2016 |
| Passivation of SiC device surfaces by aluminum oxide A Hallén, M Usman, S Suvanam, C Henkel, D Martin, MK Linnarsson IOP Conference Series: Materials Science and Engineering 56 (1), 012007, 2014 | 18 | 2014 |
| Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC SS Suvanam, M Usman, D Martin, MG Yazdi, M Linnarsson, A Tempez, ... Applied Surface Science 433, 108-115, 2018 | 17 | 2018 |
| Improving the quality of Al2O3/4H-SiC interface for device applications M Usman, SS Suvanam, MK Linnarsson, A Hallén Materials Science in Semiconductor Processing 81, 118-121, 2018 | 16 | 2018 |
| Extreme radiation hard thin film CZTSSe solar cell SS Suvanam, J Larsen, N Ross, V Kosyak, A Hallén, CP Björkman Solar Energy Materials and Solar Cells 185, 16-20, 2018 | 15 | 2018 |
| Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrotron-based XPS M Usman, SS Suvanam, MG Yazdi, M Göthelid, M Sultan, A Hallén Journal of Physics D: Applied Physics 49 (25), 255308, 2016 | 14 | 2016 |
| 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption S Sethu Saveda, G Karolis, U Muhammed, L Margaritha, M David, L Jan, ... Journal of applied physics 117 (10), 105309, 2015 | 13 | 2015 |
| Si‐nanoparticle synthesis using ion implantation and MeV ion irradiation T Chulapakorn, I Sychugov, SS Suvanam, J Linnros, M Wolff, ... physica status solidi (c) 12 (12), 1301-1305, 2015 | 10 | 2015 |
| Effects of 3-MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gates SS Suvanam, L Lanni, BG Malm, CM Zetterling, A Hallén IEEE Transactions on Nuclear Science 61 (4), 1772-1776, 2014 | 10 | 2014 |
| Radiation hardness of 4H-SiC devices and circuits SS Suvanam KTH Royal Institute of Technology, 2017 | 8 | 2017 |
| Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2 T Chulapakorn, I Sychugov, SS Suvanam, J Linnros, D Primetzhofer, ... Nanotechnology 28 (37), 375603, 2017 | 6 | 2017 |
| Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering MK Linnarsson, A Hallén, S Khartsev, SS Suvanam, M Usman Journal of Physics D: Applied Physics 50 (49), 495111, 2017 | 5 | 2017 |
| Antimony‐Doped Tin Oxide as Transparent Back Contact in Cu2ZnSnS4 Thin‐Film Solar Cells S Englund, T Kubart, J Keller, MV Moro, D Primetzhofer, SS Suvanam, ... physica status solidi (a) 216 (22), 1900542, 2019 | 4 | 2019 |
| Interface analysis of p-type 4H-SiC/Al2O3 using synchrotron-based XPS SS Suvanam, MG Yazdi, M Usman, M Götelid, A Hallén Materials Science Forum 858, 693-696, 2016 | 4 | 2016 |
| Ion-beam based characterization of TiN back contact interlayers for CZTS (e) thin film solar cells V Paneta, S Englund, S Suvanam, J Scragg, C Platzer-Björkman, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2019 | 3 | 2019 |
| A comparison of free carrier absorption and capacitance voltage methods for interface trap measurements SS Suvanam, M Usman, K Gulbinas, V Grivickas, A Hallén Materials Science Forum 740, 465-468, 2013 | 3 | 2013 |
| Total dose effects on 4H-SiC bipolar junction transistors SS Suvanam, L Lanni, BG Malm, CM Zetterling, A Hallén Material science Forum 897, 579-582, 2017 | 2 | 2017 |
| Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor JH Xia, DM Martin, SS Suvanam, CM Zetterling, M Östling Materials Science Forum 778, 549-552, 2014 | 2 | 2014 |
Muhammad Usman, PhDNational Centre for Physics, IslamabadEmail verificata su ncp.edu.pk
