On the feasibility of p-type Ga2O3 A Kyrtsos, M Matsubara, E Bellotti
Applied Physics Letters 112 (3), 2018
278 2018 Resonant Inelastic X-Ray Scattering in JP Hill, CC Kao, WAL Caliebe, M Matsubara, A Kotani, JL Peng, ...
Physical review letters 80 (22), 4967, 1998
211 1998 Migration mechanisms and diffusion barriers of vacancies in A Kyrtsos, M Matsubara, E Bellotti
Physical Review B 95 (24), 245202, 2017
134 2017 NiO as a test case for high resolution resonant inelastic soft x-ray scattering G Ghiringhelli, M Matsubara, C Dallera, F Fracassi, R Gusmeroli, ...
Journal of Physics: Condensed Matter 17 (35), 5397, 2005
97 2005 Polarization dependence of soft-x-ray Raman scattering at the L edge of Y Harada, T Kinugasa, R Eguchi, M Matsubara, A Kotani, M Watanabe, ...
Physical Review B 61 (19), 12854, 2000
97 2000 A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies M Matsubara, E Bellotti
Journal of Applied Physics 121 (19), 2017
96 2017 Resonant inelastic x-ray scattering of G Ghiringhelli, M Matsubara, C Dallera, F Fracassi, A Tagliaferri, ...
Physical Review B 73 (3), 035111, 2006
86 2006 Migration mechanisms and diffusion barriers of carbon and native point defects in GaN A Kyrtsos, M Matsubara, E Bellotti
Physical Review B 93 (24), 245201, 2016
73 2016 Polarization dependence of resonant X-ray emission spectra in early transition metal compounds M Matsubara, T Uozumi, A Kotani, Y Harada, S Shin
Journal of the Physical Society of Japan 69 (5), 1558-1565, 2000
65 2000 Stable Highly Doped C60 - m m 40 Si20 , C36 Si24 , and C30 Si30 M Matsubara, C Massobrio
The journal of physical chemistry A 109 (19), 4415-4418, 2005
56 2005 A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen M Matsubara, E Bellotti
Journal of Applied Physics 121 (19), 2017
55 2017 Polarization Dependence of Resonant X-Ray Emission Spectra in 3dn Transition Metal Compounds with n = 0, 1, 2, 3 M Matsubara, T Uozumi, A Kotani, Y Harada, S Shin
Journal of the Physical Society of Japan 71 (1), 347-356, 2002
54 2002 A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO R Saniz, Y Xu, M Matsubara, MN Amini, H Dixit, D Lamoen, B Partoens
Journal of Physics and Chemistry of Solids 74 (1), 45-50, 2013
46 2013 Dynamical identification of a threshold instability in Si-doped heterofullerenes M Matsubara, J Kortus, JC Parlebas, C Massobrio
Physical review letters 96 (15), 155502, 2006
44 2006 Electronic structure studies of T Schmitt, LC Duda, M Matsubara, M Mattesini, M Klemm, A Augustsson, ...
Physical Review B 69 (12), 125103, 2004
43 2004 Charge transfer excitation in resonant X-ray emission spectroscopy of NiO M Matsubara, T Uozumi, A Kotani, J Claude Parlebas
Journal of the Physical Society of Japan 74 (7), 2052-2060, 2005
42 2005 Bonding behavior and thermal stability of C54Si6: A first-principles molecular dynamics study M Matsubara, C Massobrio
The Journal of chemical physics 122 (8), 2005
40 2005 Theory of carriers transport in III-nitride materials: State of the art and future outlook E Bellotti, F Bertazzi, S Shishehchi, M Matsubara, M Goano
IEEE transactions on electron devices 60 (10), 3204-3215, 2013
38 2013 Combining SG Chiuzbăian, T Schmitt, M Matsubara, A Kotani, G Ghiringhelli, ...
Physical Review B 78 (24), 245102, 2008
38 2008 Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective F Bertazzi, M Goano, X Zhou, M Calciati, G Ghione, M Matsubara, ...
Applied Physics Letters 106 (6), 2015
33 2015 