Hannes Behmenburg
Hannes Behmenburg
Email verificata su gan.rwth-aachen.de
Titolo
Citata da
Citata da
Anno
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
E Sakalauskas, H Behmenburg, C Hums, P Schley, G Rossbach, ...
Journal of Physics D: Applied Physics 43 (36), 365102, 2010
622010
InAlN/GaN HEMTs on sapphire substrate with 2.9-W/mm output power density at 18 GHz
F Lecourt, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ...
IEEE electron device letters 32 (11), 1537-1539, 2011
332011
The structure of InAlN/GaN heterostructures for high electron mobility transistors
A Vilalta‐Clemente, MA Poisson, H Behmenburg, C Giesen, M Heuken, ...
physica status solidi (a) 207 (5), 1105-1108, 2010
292010
Dependence of InN properties on MOCVD growth parameters
Tuna, H Behmenburg, C Giesen, H Kalisch, RH Jansen, GP Yablonskii, ...
physica status solidi c 8 (7‐8), 2044-2046, 2011
232011
Dislocation density assessment via X‐ray GaN rocking curve scans
I Booker, L Rahimzadeh Khoshroo, JF Woitok, V Kaganer, C Mauder, ...
physica status solidi c 7 (7‐8), 1787-1789, 2010
222010
Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT
F Lecourt, A Agboton, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ...
IEEE electron device letters 34 (8), 978-980, 2013
202013
Multicharacterization approach for studying InAl (Ga) N/Al (Ga) N/GaN heterostructures for high electron mobility transistors
G Naresh-Kumar, A Vilalta-Clemente, S Pandey, D Skuridina, ...
AIP Advances 4 (12), 127101, 2014
182014
Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE
H Behmenburg, C Giesen, R Srnanek, J Kovac, H Kalisch, M Heuken, ...
Journal of Crystal Growth 316 (1), 42-45, 2011
172011
Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors
M Eickelkamp, M Weingarten, L Rahimzadeh Khoshroo, N Ketteniss, ...
Journal of Applied Physics 110 (8), 084501, 2011
162011
Gold catalyst initiated growth of GaN nanowires by MOCVD
JP Ahl, H Behmenburg, C Giesen, I Regolin, W Prost, FJ Tegude, ...
physica status solidi c 8 (7‐8), 2315-2317, 2011
162011
Graphoepitaxy of High‐Quality GaN Layers on Graphene/6H–SiC
A Kovcs, M Duchamp, RE Dunin‐Borkowski, R Yakimova, PL Neumann, ...
Advanced materials interfaces 2 (2), 1400230, 2015
152015
In situ SiN passivation of AlInN/GaN heterostructures by MOVPE
H Behmenburg, LR Khoshroo, C Mauder, N Ketteniss, KH Lee, ...
physica status solidi c 7 (7‐8), 2104-2106, 2010
152010
Quaternary nitride heterostructure field effect transistors
L Rahimzadeh Khoshroo, N Ketteniss, C Mauder, H Behmenburg, ...
physica status solidi c 7 (7‐8), 2001-2003, 2010
142010
Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation
A Alexewicz, M Alomari, D Maier, H Behmenburg, C Giesen, M Heuken, ...
Solid-state electronics 89, 207-211, 2013
122013
Quaternary Enhancement-Mode HFET With In Situ SiN Passivation
N Ketteniss, H Behmenburg, H Hahn, A Noculak, B Hollander, H Kalisch, ...
IEEE electron device letters 33 (4), 519-521, 2012
122012
Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties
H Behmenburg, LR Khoshroo, M Eickelkamp, C Mauder, M Fieger, ...
physica status solidi c 6 (S2 2), S1041-S1044, 2009
122009
Epitaxy and characterisation of AlInGaN heterostructures for HEMT application
LR Khoshroo, C Mauder, H Behmenburg, J Woitok, W Zander, J Gruis, ...
physica status solidi c 6 (S2 2), S470-S473, 2009
122009
Dielectric function of Al‐rich AlInN in the range 1–18 eV
E Sakalauskas, H Behmenburg, P Schley, G Gobsch, C Giesen, H Kalisch, ...
physica status solidi (a) 208 (7), 1517-1519, 2011
112011
The effect of gate length variation on InAlGaN/GaN HFET device characteristics
N Ketteniss, H Behmenburg, F Lecourt, N Defrance, V Hoel, JC De Jaeger, ...
Semiconductor Science and Technology 27 (3), 035009, 2012
92012
RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate
F Lecourt, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ...
Electronics letters 47 (3), 212-214, 2011
92011
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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