A critical review of ohmic and rectifying contacts for silicon carbide LM Porter, RF Davis
Materials Science and Engineering: B 34 (2-3), 83-105, 1995
529 1995 The physics of ohmic contacts to SiC J Crofton, LM Porter, JR Williams
physica status solidi (b) 202 (1), 581-603, 1997
267 1997 High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy KC Chang, NT Nuhfer, LM Porter, Q Wahab
Applied Physics Letters 77 (14), 2186-2188, 2000
233 2000 Observation of a negative electron affinity for boron nitride MJ Powers, MC Benjamin, LM Porter, RJ Nemanich, RF Davis, JJ Cuomo, ...
Applied physics letters 67 (26), 3912-3914, 1995
190 1995 JS Bow, MJ Kim, RW Carpenter and RC Glass LM Porter, RF Davis
J. Mater. Res 10, 668, 1995
92 1995 Inhomogeneities in DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, S Tumakha, ...
Journal of applied physics 101 (11), 114514, 2007
91 2007 Growth and characterization of α -, β -, and ϵ -phases of Ga2 O3 using MOCVD and HVPE techniques Y Yao, S Okur, LAM Lyle, GS Tompa, T Salagaj, N Sbrockey, RF Davis, ...
Materials Research Letters 6 (5), 268-275, 2018
81 2018 Electrical behavior of β -Ga2 O3 Schottky diodes with different Schottky metals Y Yao, R Gangireddy, J Kim, KK Das, RF Davis, LM Porter
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
80 2017 Method of forming platinum ohmic contact to p-type silicon carbide RC Glass, JW Palmour, RF Davis, LS Porter
US Patent 5,409,859, 1995
72 1995 Thin Pt films on the polar SrTiO3 (1 1 1) surface: an experimental and theoretical study A Asthagiri, C Niederberger, AJ Francis, LM Porter, PA Salvador, DS Sholl
Surface science 537 (1-3), 134-152, 2003
68 2003 Chemical and structural analyses of the titanium nitride/alpha (6H)‐silicon carbide interface RC Glass, LM Spellman, S Tanaka, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992
65 1992 High-resolution elemental profiles of the silicon dioxide∕ 4H-silicon carbide interface KC Chang, Y Cao, LM Porter, J Bentley, S Dhar, LC Feldman, JR Williams
Journal of applied physics 97 (10), 104920, 2005
63 2005 Platinum ohmic contact to p-type silicon carbide RC Glass, JW Palmour, RF Davis, LS Porter
US Patent 5,323,022, 1994
62 1994 Investigation of different metals as ohmic contacts to β-Ga 2 O 3: comparison and analysis of electrical behavior, morphology, and other physical properties Y Yao, RF Davis, LM Porter
Journal of Electronic Materials 46 (4), 2053-2060, 2017
61 2017 Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors KC Chang, LM Porter, J Bentley, CY Lu, J Cooper Jr
Journal of applied physics 95 (12), 8252-8257, 2004
59 2004 Defect-driven inhomogeneities in S Tumakha, DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, ...
Applied Physics Letters 87 (24), 242106, 2005
58 2005 Si/SiO2 and SiC/SiO2 interfaces for MOSFETs–challenges and advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
55 2006 Si/SiO2 and SiC/SiO2 interfaces for MOSFETs–challenges and advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
55 2006 Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes Z Su, L Huang, F Liu, JP Freedman, LM Porter, RF Davis, JA Malen
Applied Physics Letters 100 (20), 201106, 2012
50 2012 Hydrogen passivation of donors and acceptors in SiC F Gendron, LM Porter, C Porte, E Bringuier
Applied physics letters 67 (9), 1253-1255, 1995
50 1995 