Thermodynamic stability of high-K dielectric metal oxides M Gutowski, JE Jaffe, CL Liu, M Stoker, RI Hegde, RS Rai, PJ Tobin
Applied Physics Letters 80 (11), 1897-1899, 2002
438 2002 Silicon nanocrystal based memory devices for NVM and DRAM applications RA Rao, RF Steimle, M Sadd, CT Swift, B Hradsky, S Straub, T Merchant, ...
Solid-State Electronics 48 (9), 1463-1473, 2004
126 2004 A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
109 2011 Solid-State Electron RA Rao, RF Steimle, M Sadd, CT Swift, B Hradsky, S Straub, T Merchant, ...
107 * 2004 Semiconductor structure including two-dimensional and three-dimensional bonding materials RTP Lee, BV Krishnan, H Zang, MW Stoker
US Patent App. 10/121,706, 2018
94 * 2018 Structure and electronic properties of zirconium and hafnium nitrides and oxynitrides DI Bazhanov, AA Knizhnik, AA Safonov, AA Bagatur’Yants, MW Stoker, ...
Journal of applied physics 97 (4), 044108, 2005
88 2005 22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL S Narasimha, P Chang, C Ortolland, D Fried, E Engbrecht, K Nummy, ...
2012 International Electron Devices Meeting, 3.3. 1-3.3. 4, 2012
83 2012 Mechanism and kinetics of thin zirconium and hafnium oxide film growth in an ALD reactor M Deminsky, A Knizhnik, I Belov, S Umanskii, E Rykova, A Bagatur’yants, ...
Surface science 549 (1), 67-86, 2004
71 2004 Catalyst deactivation 1999 B Delmono, GF Froment, JW Gosselink, JAR van Veen, JW Beeckman, ...
Proceedings of the 8th International Symposium 10, 13, 1999
66 * 1999 Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentration MK Orlowski, VH Adams, CL Liu, MW Stoker
US Patent 7,238,580, 2007
65 2007 The synthesis and characterization of iron colloid catalysts in inverse micelle solutions A Martino, M Stoker, M Hicks, CH Bartholomew, AG Sault, JS Kawola
Applied Catalysis A: General 161 (1-2), 235-248, 1997
63 1997 Silicon nitride chemical vapor deposition from dichlorosilane and ammonia: theoretical study of surface structures and reaction mechanism AA Bagatur'yants, KP Novoselov, AA Safonov, JV Cole, M Stoker, ...
Surface science 486 (3), 213-225, 2001
46 2001 Performance and variability comparisons between multi-gate FETs and planar SOI transistors AVY Thean, ZH Shi, L Mathew, T Stephens, H Desjardin, C Parker, ...
2006 International Electron Devices Meeting, 1-4, 2006
42 2006 Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2–TiO2 gate dielectrics DH Triyoso, RI Hegde, XD Wang, MW Stoker, R Rai, ME Ramon, ...
Journal of The Electrochemical Society 153 (9), G834, 2006
38 2006 Ab initio investigation of C incorporation mechanisms on Si (001) CL Liu, LJ Borucki, T Merchant, M Stoker, A Korkin
Applied Physics Letters 76 (7), 885-887, 2000
30 2000 Microstructure modified HfO/sub 2/using Zr addition with Ta/sub x/C/sub y/gate for improved device performance and reliability RI Hegde, DH Triyoso, PJ Tobin, S Kalpat, ME Ramon, HH Tseng, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 35-38, 2005
27 2005 Effects of pretreatment, reaction, and promoter on microphase structure and Fischer-Tropsch activity of precipitated iron catalysts CH Bartholomew, MW Stoker, L Mansker, A Datye
Studies in Surface Science and Catalysis 126, 265-272, 1999
24 1999 Oxidation of the Pt/HfO2 interface: The role of the oxygen chemical potential AV Gavrikov, AA Knizhnik, AA Bagatur'yants, BV Potapkin, LRC Fonseca, ...
Journal of applied physics 101 (1), 014310, 2007
22 2007 Stressed transistor with improved metastability TN Adam, SW Bedell, A Dube, ECT Harley, JR Holt, A Reznicek, ...
US Patent 8,361,859, 2013
21 2013 MOS device with nano-crystal gate structure CL Liu, TP Merchant, MK Orlowski, MW Stoker
US Patent 7,700,438, 2010
20 2010 
Judson HoltIBMEmail verificata su us.ibm.com
