Matthew Stoker
Matthew Stoker
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Thermodynamic stability of high-K dielectric metal oxides and in contact with Si and
M Gutowski, JE Jaffe, CL Liu, M Stoker, RI Hegde, RS Rai, PJ Tobin
Applied Physics Letters 80 (11), 1897-1899, 2002
Silicon nanocrystal based memory devices for NVM and DRAM applications
RA Rao, RF Steimle, M Sadd, CT Swift, B Hradsky, S Straub, T Merchant, ...
Solid-State Electronics 48 (9), 1463-1473, 2004
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
Solid-State Electron
RA Rao, RF Steimle, M Sadd, CT Swift, B Hradsky, S Straub, T Merchant, ...
Semiconductor structure including two-dimensional and three-dimensional bonding materials
RTP Lee, BV Krishnan, H Zang, MW Stoker
US Patent App. 10/121,706, 2018
Structure and electronic properties of zirconium and hafnium nitrides and oxynitrides
DI Bazhanov, AA Knizhnik, AA Safonov, AA Bagatur’Yants, MW Stoker, ...
Journal of applied physics 97 (4), 044108, 2005
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
S Narasimha, P Chang, C Ortolland, D Fried, E Engbrecht, K Nummy, ...
2012 International Electron Devices Meeting, 3.3. 1-3.3. 4, 2012
Mechanism and kinetics of thin zirconium and hafnium oxide film growth in an ALD reactor
M Deminsky, A Knizhnik, I Belov, S Umanskii, E Rykova, A Bagatur’yants, ...
Surface science 549 (1), 67-86, 2004
Catalyst deactivation 1999
B Delmono, GF Froment, JW Gosselink, JAR van Veen, JW Beeckman, ...
Proceedings of the 8th International Symposium 10, 13, 1999
Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentration
MK Orlowski, VH Adams, CL Liu, MW Stoker
US Patent 7,238,580, 2007
The synthesis and characterization of iron colloid catalysts in inverse micelle solutions
A Martino, M Stoker, M Hicks, CH Bartholomew, AG Sault, JS Kawola
Applied Catalysis A: General 161 (1-2), 235-248, 1997
Silicon nitride chemical vapor deposition from dichlorosilane and ammonia: theoretical study of surface structures and reaction mechanism
AA Bagatur'yants, KP Novoselov, AA Safonov, JV Cole, M Stoker, ...
Surface science 486 (3), 213-225, 2001
Performance and variability comparisons between multi-gate FETs and planar SOI transistors
AVY Thean, ZH Shi, L Mathew, T Stephens, H Desjardin, C Parker, ...
2006 International Electron Devices Meeting, 1-4, 2006
Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2–TiO2 gate dielectrics
DH Triyoso, RI Hegde, XD Wang, MW Stoker, R Rai, ME Ramon, ...
Journal of The Electrochemical Society 153 (9), G834, 2006
Ab initio investigation of C incorporation mechanisms on Si (001)
CL Liu, LJ Borucki, T Merchant, M Stoker, A Korkin
Applied Physics Letters 76 (7), 885-887, 2000
Microstructure modified HfO/sub 2/using Zr addition with Ta/sub x/C/sub y/gate for improved device performance and reliability
RI Hegde, DH Triyoso, PJ Tobin, S Kalpat, ME Ramon, HH Tseng, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 35-38, 2005
Effects of pretreatment, reaction, and promoter on microphase structure and Fischer-Tropsch activity of precipitated iron catalysts
CH Bartholomew, MW Stoker, L Mansker, A Datye
Studies in Surface Science and Catalysis 126, 265-272, 1999
Oxidation of the Pt/HfO2 interface: The role of the oxygen chemical potential
AV Gavrikov, AA Knizhnik, AA Bagatur'yants, BV Potapkin, LRC Fonseca, ...
Journal of applied physics 101 (1), 014310, 2007
Stressed transistor with improved metastability
TN Adam, SW Bedell, A Dube, ECT Harley, JR Holt, A Reznicek, ...
US Patent 8,361,859, 2013
MOS device with nano-crystal gate structure
CL Liu, TP Merchant, MK Orlowski, MW Stoker
US Patent 7,700,438, 2010
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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