Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
862 1997 Dislocation density reduction via lateral epitaxy in selectively grown GaN structures TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied Physics Letters 71 (17), 2472-2474, 1997
691 1997 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
295 2000 Growth, doping and characterization of AlxGa1− xN thin film alloys on 6H-SiC (0001) substrates MD Bremser, WG Perry, T Zheleva, NV Edwards, OH Nam, N Parikh, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1996
143 1996 Growth of GaN and Al0. 2Ga0. 8N on patterened substrates via organometallic vapor phase epitaxy OH Nam, MD Bremser, BL Ward, RJ Nemanich, RFDRF Davis
Japanese journal of applied physics 36 (5A), L532, 1997
136 1997 Gallium nitride semiconductor structure including laterally offset patterned layers RF Davis, OH Nam
US Patent 6,608,327, 2003
133 2003 Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy OH Nam, TS Zheleva, MD Bremser, RF Davis
Journal of electronic materials 27 (4), 233-237, 1998
116 1998 Characteristics of GaN‐based laser diodes for post‐DVD applications OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ...
physica status solidi (a) 201 (12), 2717-2720, 2004
113 2004 Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics HY Ryu, KH Ha, JH Chae, OH Nam, YJ Park
Applied physics letters 87 (9), 2005
110 2005 Crystal-polarity dependence of Ti/Al contacts to freestanding JS Kwak, KY Lee, JY Han, J Cho, S Chae, OH Nam, Y Park
Applied Physics Letters 79 (20), 3254-3256, 2001
105 2001 Lateral epitaxy and dislocation density reduction in selectively grown GaN structures TS Zheleva, OH Nam, WM Ashmawi, JD Griffin, RF Davis
Journal of Crystal Growth 222 (4), 706-718, 2001
100 2001 High-power GaN-based blue-violet laser diodes with AlGaN∕ GaN multiquantum barriers SN Lee, SY Cho, HY Ryu, JK Son, HS Paek, T Sakong, T Jang, KK Choi, ...
Applied physics letters 88 (11), 2006
97 2006 Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy BL Ward, OH Nam, JD Hartman, SL English, BL McCarson, R Schlesser, ...
Journal of applied physics 84 (9), 5238-5242, 1998
83 1998 Optical characterization of lateral epitaxial overgrown GaN layers JA Freitas Jr, OH Nam, RF Davis, GV Saparin, SK Obyden
Applied physics letters 72 (23), 2990-2992, 1998
82 1998 Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong
Applied physics letters 83 (24), 4990-4992, 2003
77 2003 Three-dimensional ZnO hybrid nanostructures for oxygen sensing application MC Jeong, BY Oh, OH Nam, T Kim, JM Myoung
Nanotechnology 17 (2), 526, 2005
76 2005 Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to JS Kwak, OH Nam, Y Park
Applied physics letters 80 (19), 3554-3556, 2002
76 2002 Temperature-dependent contact resistivity of the nonalloyed ohmic contacts to JS Kwak, OH Nam, Y Park
Journal of applied physics 95 (10), 5917-5919, 2004
74 2004 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,602,763, 2003
73 2003 Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong
IEEE Photonics Technology Letters 16 (6), 1450-1452, 2004
69 2004 
Robert F. DavisCarnegie Mellon UniversityEmail verificata su andrew.cmu.edu
