Okhyun Nam
Okhyun Nam
Dept. of Nano-Semiconductor Engineering, Korea Polytechnic University
Email verificata su kpu.ac.kr
Titolo
Citata da
Citata da
Anno
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
8171997
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied Physics Letters 71 (17), 2472-2474, 1997
6121997
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
2872000
Growth of GaN and Al0. 2Ga0. 8N on patterened substrates via organometallic vapor phase epitaxy
OH Nam, MD Bremser, BL Ward, RJ Nemanich, RF Davis
Japanese journal of applied physics 36 (5A), L532, 1997
1361997
Gallium nitride semiconductor structure including laterally offset patterned layers
RF Davis, OH Nam
US Patent 6,608,327, 2003
1292003
Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates
MD Bremser, WG Perry, T Zheleva, NV Edwards, OH Nam, N Parikh, ...
Materials Research Society Internet Journal of Nitride Semiconductor Research 1, 1996
1271996
Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy
OH Nam, TS Zheleva, MD Bremser, RF Davis
Journal of electronic materials 27 (4), 233-237, 1998
1011998
Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics
HY Ryu, KH Ha, JH Chae, OH Nam, YJ Park
Applied physics letters 87 (9), 093506, 2005
992005
Crystal-polarity dependence of Ti/Al contacts to freestanding substrate
JS Kwak, KY Lee, JY Han, J Cho, S Chae, OH Nam, Y Park
Applied Physics Letters 79 (20), 3254-3256, 2001
982001
Characteristics of GaN‐based laser diodes for post‐DVD applications
OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ...
physica status solidi (a) 201 (12), 2717-2720, 2004
962004
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
TS Zheleva, OH Nam, WM Ashmawi, JD Griffin, RF Davis
Journal of Crystal Growth 222 (4), 706-718, 2001
902001
High-power -based blue-violet laser diodes with multiquantum barriers
SN Lee, SY Cho, HY Ryu, JK Son, HS Paek, T Sakong, T Jang, KK Choi, ...
Applied physics letters 88 (11), 111101, 2006
842006
Optical characterization of lateral epitaxial overgrown GaN layers
JA Freitas Jr, OH Nam, RF Davis, GV Saparin, SK Obyden
Applied physics letters 72 (23), 2990-2992, 1998
801998
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
BL Ward, OH Nam, JD Hartman, SL English, BL McCarson, R Schlesser, ...
Journal of applied physics 84 (9), 5238-5242, 1998
771998
Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes
JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong
Applied physics letters 83 (24), 4990-4992, 2003
752003
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,602,763, 2003
732003
Three-dimensional ZnO hybrid nanostructures for oxygen sensing application
MC Jeong, BY Oh, OH Nam, T Kim, JM Myoung
Nanotechnology 17 (2), 526, 2005
702005
Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes
JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong
IEEE Photonics Technology Letters 16 (6), 1450-1452, 2004
692004
Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to
JS Kwak, OH Nam, Y Park
Applied physics letters 80 (19), 3554-3556, 2002
682002
Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate
IH Kim, C Sone, OH Nam, YJ Park, T Kim
Applied Physics Letters 75 (26), 4109-4111, 1999
651999
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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