Diego Sabbagh
Diego Sabbagh
QuTech - TUDelft
Verified email at tudelft.nl - Homepage
Cited by
Cited by
Gate-controlled quantum dots and superconductivity in planar germanium
NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ...
Nature communications 9 (1), 1-7, 2018
Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology
A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ...
Advanced Functional Materials 29 (14), 1807613, 2019
Qubit device integration using advanced semiconductor manufacturing process technology
R Pillarisetty, N Thomas, HC George, K Singh, J Roberts, L Lampert, ...
2018 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2018
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells
M Virgilio, D Sabbagh, M Ortolani, L Di Gaspare, G Capellini, M De Seta
Physical Review B 90 (15), 155420, 2014
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe quantum wells
M Virgilio, M Ortolani, M Teich, S Winnerl, M Helm, D Sabbagh, ...
Physical Review B 89 (4), 045311, 2014
Electron dynamics in silicon–germanium terahertz quantum fountain structures
D Sabbagh, J Schmidt, S Winnerl, M Helm, L Di Gaspare, M De Seta, ...
ACS Photonics 3 (3), 403-414, 2016
Light effective hole mass in undoped Ge/SiGe quantum wells
M Lodari, A Tosato, D Sabbagh, MA Schubert, G Capellini, A Sammak, ...
Physical Review B 100 (4), 041304, 2019
Quantum Transport Properties of Industrial
D Sabbagh, N Thomas, J Torres, R Pillarisetty, P Amin, HC George, ...
Physical Review Applied 12 (1), 014013, 2019
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy
E Calandrini, M Ortolani, A Nucara, G Scappucci, WM Klesse, ...
Journal of Optics 16 (9), 094010, 2014
Epi-cleaning of Ge/GeSn heterostructures
L Di Gaspare, D Sabbagh, M De Seta, A Sodo, S Wirths, D Buca, ...
Journal of applied physics 117 (4), 045306, 2015
Photoluminescence of phosphorus atomic layer doped Ge grown on Si
Y Yamamoto, LW Nien, G Capellini, M Virgilio, I Costina, MA Schubert, ...
Semiconductor Science and Technology 32 (10), 104005, 2017
Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures
BP Wuetz, PL Bavdaz, LA Yeoh, R Schouten, H van der Does, ...
npj Quantum Information 6 (1), 1-8, 2020
Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology
NE THOMAS, TF Watson, M Metz, JM Boter, JP Dehollain Lorenzana, ...
2018 IEEE International Electron Devices Meeting, IEDM 2018 2018, 2019
Full 300mm fin based QD device characterization
HC George, N Thomas, R Pillarisetty, L Lampert, T Watson, J Roberts, ...
APS 2019, P29. 001, 2019
Very high mobilities for holes in strained germanium quantum wells
N Hendrickx, A Sammak, LR Yeoh, D Sabbagh, M Veldhorst, G Scappucci
APS 2018, V40. 009, 2018
300mm process line for qubit fabrication
HC George, K Singh, R Pillarisetty, N Thomas, J Boter, D Brousse, ...
APS 2018, C28. 009, 2018
Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers
G Scappucci, L Yeoh, D Sabbagh, A Sammak, J Boter, G Droulers, ...
APS 2017, H26. 012, 2017
Undoped strained germanium quantum wells towards spin qubits
G Scappucci, A Sammak, LR Yeoh, D Sabbagh, S Conesa-Boj, S Kolling, ...
APS 2017, H26. 007, 2017
Germanium quantum fountain structures on silicon substrates
D Sabbagh, M De Seta, L Di Gaspare, J Schmidt, S Winnerl, M Helm, ...
2016 41st International Conference on Infrared, Millimeter, and Terahertzá…, 2016
Far-infrared optical properties of Ge/SiGe quantum well systems
D Sabbagh
UniversitÓ degli studi Roma Tre, 2016
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Articles 1–20