| Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs AJ Lelis, R Green, DB Habersat, M El IEEE Transactions on Electron Devices 62 (2), 316-323, 2014 | 431 | 2014 |
| Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ... IEEE transactions on Electron Devices 55 (8), 1835-1840, 2008 | 362 | 2008 |
| The nature of the trapped hole annealing process AJ Lelis, TR Oldham, HE Boesch, FB McLean IEEE Transactions on Nuclear Science 36 (6), 1808-1815, 1989 | 344 | 1989 |
| Spatial dependence of trapped holes determined from tunneling analysis and measured annealing TR Oldham, AJ Lelis, FB McLean IEEE Transactions on Nuclear Science 33 (6), 1203-1209, 1986 | 326 | 1986 |
| Reversibility of trapped hole annealing AJ Lelis, HE Boesch, TR Oldham, FB McLean IEEE Transactions on Nuclear Science 35 (6), 1186-1191, 1988 | 214 | 1988 |
| A physical model of high temperature 4H-SiC MOSFETs S Potbhare, N Goldsman, A Lelis, JM McGarrity, FB McLean, D Habersat IEEE Transactions on Electron devices 55 (8), 2029-2040, 2008 | 211 | 2008 |
| Time dependence of switching oxide traps AJ Lelis, TR Oldham IEEE Transactions on Nuclear Science 41 (6), 1835-1843, 1994 | 203 | 1994 |
| Transition layers at the SiO2∕ SiC interface T Zheleva, A Lelis, G Duscher, F Liu, I Levin, M Das Applied Physics Letters 93 (2), 2008 | 201 | 2008 |
| Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast–Techniques M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ... IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008 | 148 | 2008 |
| Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors SK Powell, N Goldsman, JM McGarrity, J Bernstein, CJ Scozzie, A Lelis Journal of Applied Physics 92 (7), 4053-4061, 2002 | 146 | 2002 |
| Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor S Potbhare, N Goldsman, G Pennington, A Lelis, JM McGarrity Journal of Applied Physics 100 (4), 2006 | 140 | 2006 |
| An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors CJ Cochrane, PM Lenahan, AJ Lelis Journal of Applied Physics 109 (1), 2011 | 125 | 2011 |
| Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobility TL Biggerstaff, CL Reynolds, T Zheleva, A Lelis, D Habersat, S Haney, ... Applied Physics Letters 95 (3), 2009 | 114 | 2009 |
| Electron spin resonance evidence that E'/sub/spl gamma//centers can behave as switching oxide traps JF Conley, PM Lenahan, AJ Lelis, TR Oldham IEEE Transactions on Nuclear Science 42 (6), 1744-1749, 1995 | 111 | 1995 |
| Post-irradiation effects in field-oxide isolation structures TR Oldham, AJ Lelis, HE Boesch, JM Benedetto, FB McLean, ... IEEE Transactions on Nuclear Science 34 (6), 1184-1189, 1987 | 108 | 1987 |
| Application of reliability test standards to SiC Power MOSFETs R Green, A Lelis, D Habersat 2011 International Reliability Physics Symposium, EX. 2.1-EX. 2.9, 2011 | 95 | 2011 |
| Response of interface traps during high-temperature anneals (MOSFETs) AJ Lelis, TR Oldham, WM DeLancey IEEE Transactions on nuclear Science 38 (6), 1590-1597, 1991 | 86 | 1991 |
| Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination CJ Cochrane, PM Lenahan, AJ Lelis Applied Physics Letters 100 (2), 2012 | 84 | 2012 |
| Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs R Green, A Lelis, D Habersat Japanese Journal of Applied Physics 55 (4S), 04EA03, 2016 | 78 | 2016 |
| Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2 JF Conley Jr, PM Lenahan, AJ Lelis, TR Oldham Applied physics letters 67 (15), 2179-2181, 1995 | 63 | 1995 |
