Aivars Lelis
Aivars Lelis
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Titolo
Citata da
Citata da
Anno
The nature of the trapped hole annealing process
AJ Lelis, TR Oldham, HE Boesch, FB McLean
IEEE Transactions on Nuclear Science 36 (6), 1808-1815, 1989
3021989
Spatial dependence of trapped holes determined from tunneling analysis and measured annealing
TR Oldham, AJ Lelis, FB McLean
IEEE Transactions on Nuclear Science 33 (6), 1203-1209, 1986
2841986
Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements
AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ...
IEEE Transactions on Electron Devices 55 (8), 1835-1840, 2008
2682008
Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs
AJ Lelis, R Green, DB Habersat, M El
IEEE Transactions on Electron Devices 62 (2), 316-323, 2014
2412014
Reversibility of trapped hole annealing
AJ Lelis, HE Boesch, TR Oldham, FB McLean
IEEE Transactions on Nuclear Science 35 (6), 1186-1191, 1988
1951988
Time dependence of switching oxide traps
AJ Lelis, TR Oldham
IEEE Transactions on Nuclear Science 41 (6), 1835-1843, 1994
1791994
Transition layers at the interface
T Zheleva, A Lelis, G Duscher, F Liu, I Levin, M Das
Applied Physics Letters 93 (2), 022108, 2008
1692008
A physical model of high temperature 4H-SiC MOSFETs
S Potbhare, N Goldsman, A Lelis, JM McGarrity, FB McLean, D Habersat
IEEE Transactions on Electron devices 55 (8), 2029-2040, 2008
1602008
Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using FastTechniques
M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ...
IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008
1302008
Numerical and experimental characterization of -silicon carbide lateral metal-oxide-semiconductor field-effect transistor
S Potbhare, N Goldsman, G Pennington, A Lelis, JM McGarrity
Journal of Applied Physics 100 (4), 044515, 2006
1182006
Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors
SK Powell, N Goldsman, JM McGarrity, J Bernstein, CJ Scozzie, A Lelis
Journal of Applied Physics 92 (7), 4053-4061, 2002
1012002
Post-irradiation effects in field-oxide isolation structures
TR Oldham, AJ Lelis, HE Boesch, JM Benedetto, FB McLean, ...
IEEE Transactions on Nuclear Science 34 (6), 1184-1189, 1987
1001987
Relationship between transition layer thickness and mobility
TL Biggerstaff, CL Reynolds Jr, T Zheleva, A Lelis, D Habersat, S Haney, ...
Applied Physics Letters 95 (3), 032108, 2009
982009
Electron spin resonance evidence that E'/sub/spl gamma//centers can behave as switching oxide traps
JF Conley, PM Lenahan, AJ Lelis, TR Oldham
IEEE Transactions on Nuclear Science 42 (6), 1744-1749, 1995
981995
An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors
CJ Cochrane, PM Lenahan, AJ Lelis
Journal of Applied Physics 109 (1), 014506, 2011
882011
Response of interface traps during high-temperature anneals (MOSFETs)
AJ Lelis, TR Oldham, WM DeLancey
IEEE Transactions on nuclear Science 38 (6), 1590-1597, 1991
781991
Application of reliability test standards to SiC Power MOSFETs
R Green, A Lelis, D Habersat
2011 International Reliability Physics Symposium, EX. 2.1-EX. 2.9, 2011
732011
Bias stress-induced threshold-voltage instability of SiC MOSFETs
AJ Lelis, DB Habersat, G Lopez, JM McGarrity, FB McLean, N Goldsman
Materials science forum 527, 1317-1320, 2006
632006
Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination
CJ Cochrane, PM Lenahan, AJ Lelis
Applied Physics Letters 100 (2), 023509, 2012
622012
Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2
JF Conley Jr, PM Lenahan, AJ Lelis, TR Oldham
Applied physics letters 67 (15), 2179-2181, 1995
601995
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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