Segui
Takayuki Hasegawa
Takayuki Hasegawa
Osaka Institute of Technology
Email verificata su oit.ac.jp
Titolo
Citata da
Citata da
Anno
Enhancement of terahertz electromagnetic wave emission from an undoped GaAs∕ n-type GaAs epitaxial layer structure
H Takeuchi, J Yanagisawa, T Hasegawa, M Nakayama
Applied Physics Letters 93 (8), 2008
492008
Characteristics of photoluminescence due to exciton-exciton scattering in GaAs/AlAs multiple quantum wells
M Nakayama, T Hirao, T Hasegawa
Journal of Applied Physics 105 (12), 2009
142009
Photoluminescence properties of exciton–exciton scattering in a GaAs/AlAs multiple quantum well
M Nakayama, T Hirao, T Hasegawa
Physica E: Low-dimensional Systems and Nanostructures 42 (10), 2644-2647, 2010
112010
Transformation process from quantum beats of miniband excitons to Bloch oscillations in a superlattice under applied electric fields
T Hasegawa, K Mizoguchi, M Nakayama
Physical Review B 76 (11), 115323, 2007
92007
Electroreflectance Observation of Transformation Processes of the First and Second Minibands to Wannier–Stark Localization States in a GaAs/AlAs Superlattice
T Hasegawa, M Nakayama
Japanese journal of applied physics 44 (12R), 8340, 2005
82005
Ultrafast dynamics of coherent optical phonon correlated with the antiferromagnetic transition in a hexagonal YMnO3 epitaxial film
T Hasegawa, N Fujimura, M Nakayama
Applied Physics Letters 111 (19), 2017
72017
Characteristics of ultrafast optical responses originating from non-equilibrium carrier transport in undoped GaAs/n-type GaAs epitaxial structures
T Hasegawa, Y Takagi, H Takeuchi, H Yamada, M Hata, M Nakayama
Journal of Applied Physics 113 (20), 2013
72013
Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures
T Hasegawa, Y Takagi, H Takeuchi, H Yamada, M Hata, M Nakayama
Applied Physics Letters 100 (21), 2012
72012
Characteristics of terahertz wave emissions under the coexistence of different sub-picosecond transient phenomena in GaAs epitaxial films
T Hasegawa, Y Okushima, Y Tanaka
Applied Physics Express 14 (4), 041005, 2021
42021
Characteristics of Coherent Optical Phonons in a Hexagonal YMnO3 Thin Film
T Hasegawa
Applied Sciences 9 (4), 704, 2019
42019
High-sensitivity polarization modulation reflectance spectroscopy of cavity polaritons in a ZnO microcavity
T Hasegawa, R Kishimoto, Y Takagi, T Kawase, DG Kim, M Nakayama
Applied Physics Express 7 (3), 032003, 2014
42014
Electric field effects on excitonic quantum beats in a single quantum well embedded in a GaAs/AlAs superlattice
T Hasegawa, Y Takagi, M Nakayama
Physical Review B 83 (20), 205309, 2011
42011
Photoluminescence due to exciton–exciton scattering in a GaAs/AlAs multiple quantum well
T Hirao, T Hasegawa, M Nakayama
Journal of luminescence 128 (5-6), 960-962, 2008
42008
Excitonic quantum beat at the mini-Brillouin-zone boundary in a GaAs/AlAs superlattice
T Hasegawa, K Mizoguchi, M Nakayama
Journal of luminescence 128 (5-6), 1056-1058, 2008
42008
Upconversion of photoluminescence due to subband resonances in a GaAs/AlAs multiple quantum well structure
T Hasegawa, S Okamoto, M Nakayama
Physica E: Low-dimensional Systems and Nanostructures 42 (10), 2648-2651, 2010
32010
Unique characteristics of nonequilibrium carrier transport dynamics in an undoped GaAs/n-type GaAs epitaxial structure
T Hasegawa, M Nakayama
Applied Physics Express 9 (7), 071001, 2016
22016
Photocurrent bistability in a GaAs∕ AlxGa1− xAs superlattice under resonant-coupling conditions of Wannier-Stark localization states
T Hasegawa, M Nakayama
Journal of applied physics 101 (4), 2007
22007
Electric field dependence of terahertz wave emission in temperature-controlled GaAs epitaxial films
T Hasegawa, M Marui, Y Tanaka
Applied Physics Express 15 (5), 051001, 2022
12022
Effects of electric field screening induced by photogenerated carriers on terahertz wave measurement in a GaAs epitaxial structure
T Hasegawa, O Kojima
Applied Physics Express 17 (5), 051006, 2024
2024
Quantum beat of heavy-hole and light-hole excitons originating from interband Stark-ladder transitions in a biased GaAs/AlAs superlattice
T Hasegawa
Applied Physics Express 16 (2), 021007, 2023
2023
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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