John N. Randall
John N. Randall
Zyvex Labs
Email verificata su zyvexlabs.com
Titolo
Citata da
Citata da
Anno
Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure
MA Reed, JN Randall, RJ Aggarwal, RJ Matyi, TM Moore, AE Wetsel
Physical review letters 60 (6), 535, 1988
14041988
Characteristics of micromachined switches at microwave frequencies
C Goldsmith, J Randall, S Eshelman, TH Lin, D Denniston, S Chen, ...
1996 IEEE MTT-S International Microwave Symposium Digest 2, 1141-1144, 1996
3381996
Grated landing area to eliminate sticking of micro-mechanical devices
DJ Weaver, JN Randall
US Patent 5,665,997, 1997
3231997
A technique for the determination of stress in thin films
EI Bromley, JN Randall, DC Flanders, RW Mountain
Journal of Vacuum Science & Technology B: Microelectronics Processing andá…, 1983
2541983
Realization of a three‐terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor
MA Reed, WR Frensley, RJ Matyi, JN Randall, AC Seabaugh
Applied physics letters 54 (11), 1034-1036, 1989
1651989
Recessed etch RF micro-electro-mechanical switch
JN Randall, MY Kao
US Patent 6,100,477, 2000
1462000
Self‐developing resist with submicrometer resolution and processing stability
MW Geis, JN Randall, TF Deutsch, PD DeGraff, KE Krohn, LA Stern
Applied Physics Letters 43 (1), 74-76, 1983
911983
Optical proximity correction
JN Randall, TJ Aton, SR Palmer
US Patent 6,634,018, 2003
892003
Nanoelectronics: Fanciful physics or real devices?
JN Randall, MA Reed, GA Frazier
Journal of Vacuum Science & Technology B: Microelectronics Processing andá…, 1989
851989
Lateral resonant tunneling device having gate electrode aligned with tunneling barriers
D Jovanovic, JN Randall
US Patent 5,504,347, 1996
681996
Pseudomorphic bipolar quantum resonant-tunneling transistor
AC Seabaugh, WR Frensley, JN Randall, MA Reed, DL Farrington, ...
IEEE Transactions on Electron Devices 36 (10), 2328-2334, 1989
571989
Atomic precision lithography on Si
JN Randall, JW Lyding, S Schmucker, JR Von Ehr, J Ballard, R Saini, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 2009
562009
Dual-mask model-based proximity correction for high-performance 0.10-um CMOS process
SR Palmer, ME Mason, JN Randall, T Aton, K Kim, AV Tritchkov, J Burdorf, ...
20th Annual BACUS Symposium on Photomask Technology 4186, 921-932, 2001
562001
Variable-threshold resist models for lithography simulation
J Randall, KG Ronse, T Marschner, AM Goethals, M Ercken
Optical Microlithography XII 3679, 176-182, 1999
521999
Controlling the atomic layer deposition of titanium dioxide on silicon: dependence on surface termination
S McDonnell, RC Longo, O Seitz, JB Ballard, G Mordi, D Dick, JHG Owen, ...
The Journal of Physical Chemistry C 117 (39), 20250-20259, 2013
512013
Co-integrated resonant tunneling and heterojunction bipolar transistor full adder
AC Seabaugh, AH Taddiken, EA Beam, JN Randall, YC Kao, B Newell
Proceedings of IEEE International Electron Devices Meeting, 419-422, 1993
511993
Nitrocellulose as a self‐developing resist with submicrometer resolution and processing stability
MW Geis, JN Randall, TF Deutsch, NN Efremow, JP Donnelly, ...
Journal of Vacuum Science & Technology B: Microelectronics Processing andá…, 1983
511983
Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography
SW Schmucker, N Kumar, JR Abelson, SR Daly, GS Girolami, MR Bischof, ...
Nature communications 3 (1), 1-8, 2012
462012
Novel electrostatic column for ion projection lithography
A Chalupka, G Stengl, H Buschbeck, G Lammer, H Vonach, R Fischer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 1994
441994
High resolution ion beam lithography at large gaps using stencil masks
JN Randall, DC Flanders, NP Economou, JP Donnelly, EI Bromley
Applied Physics Letters 42 (5), 457-459, 1983
441983
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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