Jialing Yang
Jialing Yang
Email verificata su asu.edu
Titolo
Citata da
Citata da
Anno
Electronic surface and dielectric interface states on GaN and AlGaN
BS Eller, J Yang, RJ Nemanich
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (5…, 2013
1602013
Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride
J Yang, BS Eller, C Zhu, C England, RJ Nemanich
Journal of Applied Physics 112 (5), 053710, 2012
662012
Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga-and N-face gallium nitride
J Yang, BS Eller, RJ Nemanich
Journal of Applied Physics 116 (12), 123702, 2014
552014
Fixed-gap tunnel junction for reading DNA nucleotides
P Pang, BA Ashcroft, W Song, P Zhang, S Biswas, Q Qing, J Yang, ...
ACS nano 8 (12), 11994-12003, 2014
432014
Polarization effects of GaN and AlGaN: Polarization bound charge, band bending, and electronic surface states
BS Eller, J Yang, RJ Nemanich
Journal of electronic materials 43 (12), 4560-4568, 2014
342014
Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
J Yang, BS Eller, M Kaur, RJ Nemanich
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32 (2…, 2014
242014
Band alignment of a HfO2-VO2-HfO2 confined well structure on silicon
C Zhu, SL Caudle, J Yang, DJ Smith, RJ Nemanich
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2014
82014
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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