The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices VS Pershenkov, VB Maslov, SV Cherepko, IN Shvetzov-Shilovsky, ... IEEE Transactions on Nuclear Science 44 (6), 1840-1848, 1997 | 96 | 1997 |
Design of 65 nm CMOS SRAM for space applications: A comparative study MS Gorbunov, PS Dolotov, AA Antonov, GI Zebrev, VV Emeliyanov, ... IEEE Transactions on Nuclear Science 61 (4), 1575-1582, 2014 | 72 | 2014 |
Radiation response of bipolar transistors at various irradiation temperatures and electric biases: Modeling and experiment GI Zebrev, DY Pavlov, VS Pershenkov, AY Nikiforov, AV Sogoyan, ... IEEE transactions on Nuclear Science 53 (4), 1981-1987, 2006 | 52 | 2006 |
Analysis of SOI CMOS microprocessor's SEE sensitivity: Correlation of the results obtained by different test methods MS Gorbunov, BV Vasilegin, AA Antonov, PN Osipenko, GI Zebrev, ... IEEE Transactions on Nuclear Science 59 (4), 1130-1135, 2012 | 29 | 2012 |
Statistics and methodology of multiple cell upset characterization under heavy ion irradiation GI Zebrev, MS Gorbunov, RG Useinov, VV Emeliyanov, AI Ozerov, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015 | 28 | 2015 |
Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices VV Emelianov, AV Sogoyan, OV Meshurov, VN Ulimov, VS Pershenkov IEEE Transactions on Nuclear Science 43 (6), 2572-2578, 1996 | 24 | 1996 |
Microdose induced drain leakage effects in power trench MOSFETs: Experiment and modeling GI Zebrev, AS Vatuev, RG Useinov, VV Emeliyanov, VS Anashin, ... IEEE Transactions on Nuclear Science 61 (4), 1531-1536, 2014 | 22 | 2014 |
Roscosmos facilities for SEE testing at U400M FLNR JINR cyclotron VA Skuratov, VS Anashin, AM Chlenov, VV Emeliyanov, BN Gikal, ... 2011 12th European Conference on Radiation and Its Effects on Components and …, 2011 | 22 | 2011 |
Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses VV Emelianov, GI Zebrev, VN Ulimov, RG Useinov, VV Belyakov, ... IEEE Transactions on Nuclear Science 43 (3), 805-809, 1996 | 20 | 1996 |
Multiple cell upset cross-section uncertainty in nanoscale memories: Microdosimetric approach GI Zebrev, KS Zemtsov, RG Useinov, MS Gorbunov, VV Emeliyanov, ... 2015 15th European Conference on Radiation and Its Effects on Components and …, 2015 | 17 | 2015 |
Thermal- and radiation-induced interface traps in MOS devices AV Sogoyan, SV Cherepko, VS Pershenkov, VI Rogov, VN Ulimov, ... RADECS 97. Fourth European Conference on Radiation and its Effects on …, 1997 | 15 | 1997 |
New Insight Into Heavy Ion Induced SEGR: Impact of Charge Yield VV Emeliyanov, AS Vatuev, RG Useinov IEEE TRANSACTIONS ON NUCLEAR SCIENCE 63 (4), 2176-2182, 2016 | 14 | 2016 |
Fault-tolerant soi microprocessor for space applications PN Osipenko, AA Antonov, AV Klishin, BV Vasilegin, MS Gorbunov, ... IEEE Transactions on Nuclear Science 60 (4), 2762-2767, 2013 | 14 | 2013 |
PRIVET-A heavy ion induced single event upset rate simulator in space environment GI Zebrev, IA Ladanov, AY Nikiforov, DV Boychenko, VN Ulimov, ... 2005 8th European Conference on Radiation and Its Effects on Components and …, 2005 | 14 | 2005 |
Equipment and test results of the electronic components to SEE in the temperature range VS Anashin, AE Kozyukov, VV Emeliyanov, AI Ozerov, AS Vatuev, ... 2012 IEEE Radiation Effects Data Workshop, 1-5, 2012 | 12 | 2012 |
Roscosmos ion beam line for see testing at u400m flnr jinr cyclotron VA Skuratov, VS Anashin, AM Chlenov, VV Emeliyanov, BN Gikal, ... Reported on Single Event Effects (SEE) Symposium-SEES, 2011 | 12 | 2011 |
Physical model of single heavy ion induced hard errors R Useinov, G Zebrev, V Emeliyanov, V Pershenkov, V Ulimov Radiation and its Effects on Components and Systems, RADECS 2003 …, 2004 | 11 | 2004 |
Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors VS Pershenkov, AY Bashin, GI Zebrev, SV Avdeev, VV Belyakov, ... IEEE Transactions on Nuclear Science 49 (6), 2998-3001, 2002 | 10 | 2002 |
Thermal and field dependencies of latent relaxation processes in irradiated MOS devices VV Emelianov, AV Sogoyan, SV Cherepko, OV Meshurov, VN Ulimov, ... RADECS 97. Fourth European Conference on Radiation and its Effects on …, 1997 | 10 | 1997 |
Impact of heavy ion energy on charge yield in silicon dioxide VV Emeliyanov, AS Vatuev, RG Useinov IEEE Transactions on Nuclear Science 65 (8), 1496-1502, 2018 | 9 | 2018 |