Segui
Emeliyanov Vladimir V.
Emeliyanov Vladimir V.
Reseach Institute of Scientific Instruments
Email verificata su niipribor.ru
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Citata da
Citata da
Anno
The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices
VS Pershenkov, VB Maslov, SV Cherepko, IN Shvetzov-Shilovsky, ...
IEEE Transactions on Nuclear Science 44 (6), 1840-1848, 1997
961997
Design of 65 nm CMOS SRAM for space applications: A comparative study
MS Gorbunov, PS Dolotov, AA Antonov, GI Zebrev, VV Emeliyanov, ...
IEEE Transactions on Nuclear Science 61 (4), 1575-1582, 2014
722014
Radiation response of bipolar transistors at various irradiation temperatures and electric biases: Modeling and experiment
GI Zebrev, DY Pavlov, VS Pershenkov, AY Nikiforov, AV Sogoyan, ...
IEEE transactions on Nuclear Science 53 (4), 1981-1987, 2006
522006
Analysis of SOI CMOS microprocessor's SEE sensitivity: Correlation of the results obtained by different test methods
MS Gorbunov, BV Vasilegin, AA Antonov, PN Osipenko, GI Zebrev, ...
IEEE Transactions on Nuclear Science 59 (4), 1130-1135, 2012
292012
Statistics and methodology of multiple cell upset characterization under heavy ion irradiation
GI Zebrev, MS Gorbunov, RG Useinov, VV Emeliyanov, AI Ozerov, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015
282015
Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices
VV Emelianov, AV Sogoyan, OV Meshurov, VN Ulimov, VS Pershenkov
IEEE Transactions on Nuclear Science 43 (6), 2572-2578, 1996
241996
Microdose induced drain leakage effects in power trench MOSFETs: Experiment and modeling
GI Zebrev, AS Vatuev, RG Useinov, VV Emeliyanov, VS Anashin, ...
IEEE Transactions on Nuclear Science 61 (4), 1531-1536, 2014
222014
Roscosmos facilities for SEE testing at U400M FLNR JINR cyclotron
VA Skuratov, VS Anashin, AM Chlenov, VV Emeliyanov, BN Gikal, ...
2011 12th European Conference on Radiation and Its Effects on Components and …, 2011
222011
Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses
VV Emelianov, GI Zebrev, VN Ulimov, RG Useinov, VV Belyakov, ...
IEEE Transactions on Nuclear Science 43 (3), 805-809, 1996
201996
Multiple cell upset cross-section uncertainty in nanoscale memories: Microdosimetric approach
GI Zebrev, KS Zemtsov, RG Useinov, MS Gorbunov, VV Emeliyanov, ...
2015 15th European Conference on Radiation and Its Effects on Components and …, 2015
172015
Thermal- and radiation-induced interface traps in MOS devices
AV Sogoyan, SV Cherepko, VS Pershenkov, VI Rogov, VN Ulimov, ...
RADECS 97. Fourth European Conference on Radiation and its Effects on …, 1997
151997
New Insight Into Heavy Ion Induced SEGR: Impact of Charge Yield
VV Emeliyanov, AS Vatuev, RG Useinov
IEEE TRANSACTIONS ON NUCLEAR SCIENCE 63 (4), 2176-2182, 2016
142016
Fault-tolerant soi microprocessor for space applications
PN Osipenko, AA Antonov, AV Klishin, BV Vasilegin, MS Gorbunov, ...
IEEE Transactions on Nuclear Science 60 (4), 2762-2767, 2013
142013
PRIVET-A heavy ion induced single event upset rate simulator in space environment
GI Zebrev, IA Ladanov, AY Nikiforov, DV Boychenko, VN Ulimov, ...
2005 8th European Conference on Radiation and Its Effects on Components and …, 2005
142005
Equipment and test results of the electronic components to SEE in the temperature range
VS Anashin, AE Kozyukov, VV Emeliyanov, AI Ozerov, AS Vatuev, ...
2012 IEEE Radiation Effects Data Workshop, 1-5, 2012
122012
Roscosmos ion beam line for see testing at u400m flnr jinr cyclotron
VA Skuratov, VS Anashin, AM Chlenov, VV Emeliyanov, BN Gikal, ...
Reported on Single Event Effects (SEE) Symposium-SEES, 2011
122011
Physical model of single heavy ion induced hard errors
R Useinov, G Zebrev, V Emeliyanov, V Pershenkov, V Ulimov
Radiation and its Effects on Components and Systems, RADECS 2003 …, 2004
112004
Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors
VS Pershenkov, AY Bashin, GI Zebrev, SV Avdeev, VV Belyakov, ...
IEEE Transactions on Nuclear Science 49 (6), 2998-3001, 2002
102002
Thermal and field dependencies of latent relaxation processes in irradiated MOS devices
VV Emelianov, AV Sogoyan, SV Cherepko, OV Meshurov, VN Ulimov, ...
RADECS 97. Fourth European Conference on Radiation and its Effects on …, 1997
101997
Impact of heavy ion energy on charge yield in silicon dioxide
VV Emeliyanov, AS Vatuev, RG Useinov
IEEE Transactions on Nuclear Science 65 (8), 1496-1502, 2018
92018
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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