Segui
Feridun Ay
Feridun Ay
Eskisehir Technical University
Email verificata su eskisehir.edu.tr - Home page
Titolo
Citata da
Citata da
Anno
Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides
F Ay, A Aydinli
Optical materials 26 (1), 33-46, 2004
3142004
Vibrational and mechanical properties of single layer MXene structures: a first-principles investigation
U Yorulmaz, A Özden, NK Perkgöz, F Ay, C Sevik
Nanotechnology 27 (33), 335702, 2016
2522016
Reliable Low-Cost Fabrication of Low-Loss Waveguides With 5.4-dB Optical Gain
K Worhoff, JDB Bradley, F Ay, D Geskus, TP Blauwendraat, M Pollnau
IEEE Journal of Quantum Electronics 45 (5), 454-461, 2009
2082009
Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching
JDB Bradley, F Ay, K Wörhoff, M Pollnau
Applied Physics B 89, 311-318, 2007
1852007
Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al2O3:Er3+ optical amplifiers on silicon
JDB Bradley, L Agazzi, D Geskus, F Ay, K Wörhoff, M Pollnau
JOSA B 27 (2), 187-196, 2010
1782010
Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides
L Agazzi, JDB Bradley, M Dijkstra, F Ay, G Roelkens, R Baets, K Wörhoff, ...
Optics express 18 (26), 27703-27711, 2010
1222010
Focused ion beam scan routine, dwell time and dose optimizations for submicrometre period planar photonic crystal components and stamps in silicon
WCL Hopman, F Ay, W Hu, VJ Gadgil, L Kuipers, M Pollnau, ...
Nanotechnology 18 (19), 195305, 2007
1132007
Erbium-doped spiral amplifiers with 20 dB of net gain on silicon
SA Vázquez-Córdova, M Dijkstra, EH Bernhardi, F Ay, K Wörhoff, ...
Optics express 22 (21), 25993-26004, 2014
1102014
Integrated Al2O3:Er3+ ring lasers on silicon with wide wavelength selectivity
JD Bradley, R Stoffer, L Agazzi, F Ay, K Wörhoff, M Pollnau
Optics letters 35 (1), 73-75, 2010
1012010
Prism coupling technique investigation of elasto-optical properties of thin polymer films
F Ay, A Kocabas, C Kocabas, A Aydinli, S Agan
Journal of applied physics 96 (12), 7147-7153, 2004
812004
CVD growth of monolayer MoS2: Role of growth zone configuration and precursors ratio
A Özden, F Ay, C Sevik, NK Perkgöz
Japanese Journal of Applied Physics 56 (6S1), 06GG05, 2017
752017
High-gain Al2O3:Nd3+ channel waveguide amplifiers at 880 nm, 1060 nm, and 1330 nm
J Yang, K van Dalfsen, K Wörhoff, F Ay, M Pollnau
Applied Physics B 101, 119-127, 2010
612010
Influence of substrate temperature and bias voltage on the optical transmittance of TiN films
HZ Durusoy, Ö Duyar, A Aydınlı, F Ay
Vacuum 70 (1), 21-28, 2003
602003
CVD growth of monolayer WS2 through controlled seed formation and vapor density
B Yorulmaz, A Özden, H Şar, F Ay, C Sevik, NK Perkgöz
Materials Science in Semiconductor Processing 93, 158-163, 2019
412019
Low Loss Atomic Layer Deposited Al2O3Waveguides for Applications in On-Chip Optical Amplifiers
M Demirtaş, C Odacı, NK Perkgöz, C Sevik, F Ay
IEEE Journal of Selected Topics in Quantum Electronics 24 (4), 1-8, 2018
352018
Long‐Term Stability Control of CVD‐Grown Monolayer MoS2
H Şar, A Özden, İ Demiroğlu, C Sevik, NK Perkgoz, F Ay
physica status solidi (RRL)–Rapid Research Letters, 1800687, 2019
342019
A distinct correlation between the vibrational and thermal transport properties of group VA monolayer crystals
T Kocabaş, D Çakır, O Gülseren, F Ay, NK Perkgöz, C Sevik
Nanoscale 10 (16), 7803-7812, 2018
342018
Glass-assisted CVD growth of large-area MoS2, WS2 and MoSe2 monolayers on Si/SiO2 substrate
GU Özküçük, C Odacı, E Şahin, F Ay, NK Perkgöz
Materials Science in Semiconductor Processing 105, 104679, 2020
332020
Integrated AlO:Er Zero-Loss Optical Amplifier and Power Splitter With 40-nm Bandwidth
JDB Bradley, R Stoffer, A Bakker, L Agazzi, F Ay, K Worhoff, M Pollnau
IEEE Photonics Technology Letters 22 (5), 278-280, 2010
312010
Layer and size distribution control of CVD-grown 2D MoS2 using ALD-deposited MoO3 structures as the precursor
M Demirtaş, C Odacı, Y Shehu, NK Perkgöz, F Ay
Materials Science in Semiconductor Processing 108, 104880, 2020
302020
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20