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Simone Balatti
Simone Balatti
Email verificata su amat.com
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Resistive switching by voltage-driven ion migration in bipolar RRAM—Part II: Modeling
S Larentis, F Nardi, S Balatti, DC Gilmer, D Ielmini
IEEE Transactions on Electron Devices 59 (9), 2468-2475, 2012
4552012
Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
IEEE Transactions on electron devices 61 (8), 2912-2919, 2014
1932014
Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM
S Ambrogio, S Balatti, V Milo, R Carboni, ZQ Wang, A Calderoni, ...
IEEE Transactions on Electron Devices 63 (4), 1508-1515, 2016
1872016
Resistive switching by voltage-driven ion migration in bipolar RRAM—Part I: Experimental study
F Nardi, S Larentis, S Balatti, DC Gilmer, D Ielmini
IEEE Transactions on Electron Devices 59 (9), 2461-2467, 2012
1732012
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament
S Balatti, S Larentis, DC Gilmer, D Ielmini
Advanced materials 25 (10), 1474-1478, 2013
1552013
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches
S Ambrogio, S Balatti, DC Gilmer, D Ielmini
IEEE Transactions on Electron Devices 61 (7), 2378-2386, 2014
1382014
Evidence for voltage-driven set/reset processes in bipolar switching RRAM
D Ielmini, F Nardi, S Balatti
IEEE Transactions on Electron Devices 59 (8), 2049-2056, 2012
1302012
Complementary switching in oxide-based bipolar resistive-switching random memory
F Nardi, S Balatti, S Larentis, DC Gilmer, D Ielmini
IEEE transactions on electron devices 60 (1), 70-77, 2012
1202012
Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise
S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
IEEE Transactions on Electron Devices 61 (8), 2920-2927, 2014
1162014
Spike-timing dependent plasticity in a transistor-selected resistive switching memory
S Ambrogio, S Balatti, F Nardi, S Facchinetti, D Ielmini
Nanotechnology 24 (38), 384012, 2013
1152013
True random number generation by variability of resistive switching in oxide-based devices
S Balatti, S Ambrogio, Z Wang, D Ielmini
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2…, 2015
1022015
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
S Ambrogio, S Balatti, S Choi, D Ielmini
Advanced Materials 26 (23), 3885-3892, 2014
982014
Physical unbiased generation of random numbers with coupled resistive switching devices
S Balatti, S Ambrogio, R Carboni, V Milo, Z Wang, A Calderoni, ...
IEEE Transactions on Electron Devices 63 (5), 2029-2035, 2016
902016
Complementary switching in metal oxides: Toward diode-less crossbar RRAMs
F Nardi, S Balatti, S Larentis, D Ielmini
2011 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2011
892011
Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory
S Balatti, S Ambrogio, Z Wang, S Sills, A Calderoni, N Ramaswamy, ...
IEEE Transactions on Electron Devices 62 (10), 3365-3372, 2015
822015
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems
Z Wang, S Ambrogio, S Balatti, D Ielmini
Frontiers in neuroscience 8, 438, 2015
822015
Set variability and failure induced by complementary switching in bipolar RRAM
S Balatti, S Ambrogio, DC Gilmer, D Ielmini
IEEE electron device letters 34 (7), 861-863, 2013
742013
Normally-off logic based on resistive switches—Part I: Logic gates
S Balatti, S Ambrogio, D Ielmini
IEEE transactions on Electron Devices 62 (6), 1831-1838, 2015
712015
Understanding switching variability and random telegraph noise in resistive RAM
S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
2013 IEEE International Electron Devices Meeting, 31.5. 1-31.5. 4, 2013
662013
Noise-induced resistance broadening in resistive switching memory—Part II: Array statistics
S Ambrogio, S Balatti, V McCaffrey, DC Wang, D Ielmini
IEEE Transactions on Electron Devices 62 (11), 3812-3819, 2015
612015
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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