Stephen J Sweeney

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Citazioni	4859	2177
Indice H	36	25
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Alfred AdamsProfessor of Physics, University of SurreyEmail verificata su surrey.ac.uk
Eoin O'ReillyResearch Professor, Tyndall National InstituteEmail verificata su tyndall.ie
Dr Igor MarkoResearch Fellow, University of Surrey, GuildfordEmail verificata su surrey.ac.uk
Konstanze HildUniversity of SurreyEmail verificata su surrey.ac.uk
Kerstin VolzProfessor of PhysicsEmail verificata su staff.uni-marburg.de
Wolfgang StolzProfessor der Physik, Philipps-Universität MarburgEmail verificata su physik.uni-marburg.de
Nadir HossainResearch Fellow, University of Toronto, CanadaEmail verificata su utoronto.ca
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikEmail verificata su pdi-berlin.de
Stanko TomicFInstP, Chair in Photonics, University of Salford, STFC Daresbury Laboratories, University of SurreyEmail verificata su salford.ac.uk
Jo Shien NgProfessor of Semiconductor Devices, University of SheffieldEmail verificata su sheffield.ac.uk
JPR DavidUniversity of SheffieldEmail verificata su sheffield.ac.uk
Aleksey AndreevSenior Scientist, Hitachi Cambridge LaboratoryEmail verificata su phy.cam.ac.uk
Christopher A. BroderickNational University of Ireland Post-Doctoral Fellow in the Sciences - Tyndall National InstituteEmail verificata su ucc.ie
Ben MurdinUniversity of SurreyEmail verificata su surrey.ac.uk
Abdul Rahman MohmadInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan MalaysiaEmail verificata su ukm.edu.my
Yong-Hang ZhangProf., School of Electrical, Computer and Energy EngineeringEmail verificata su asu.edu
T E SaleUniversity of Surrey, University of Sheffield, Avago technologies, BroadcomEmail verificata su ieee.org
Shane R JohnsonArizona State UniversityEmail verificata su asu.edu
Shui-Qing (Fisher) YuUniversity of ArkansasEmail verificata su uark.edu
Shamsul ArafinAssistant Professor, Ohio State UEmail verificata su osu.edu

Stephen J Sweeney

Professor of Physics, University of Surrey

Email verificata su surrey.ac.uk - Home page

photonics semiconductors wireless power high pressure photonic thermometry


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
The temperature dependence of 1.3-and 1.5-/spl mu/m compressively strained InGaAs (P) MQW semiconductor lasers AF Phillips, SJ Sweeney, AR Adams, PJA Thijs IEEE Journal of selected topics in quantum electronics 5 (3), 401-412, 1999	229	1999
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ... IEEE Journal of selected topics in quantum electronics 8 (4), 801-810, 2002	190	2002
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje, SJ Sweeney Journal of Applied Physics 111 (11), 113108, 2012	182	2012
Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared SJ Sweeney, SR Jin Journal of applied physics 113 (4), 043110, 2013	180	2013
Band engineering in dilute nitride and bismide semiconductor lasers CA Broderick, M Usman, SJ Sweeney, EP O’Reilly Semiconductor Science and Technology 27 (9), 094011, 2012	163	2012
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ... IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003	161	2003
Laser operation of Ga (NAsP) lattice-matched to (001) silicon substrate S Liebich, M Zimprich, A Beyer, C Lange, DJ Franzbach, S Chatterjee, ... Applied Physics Letters 99 (7), 071109, 2011	156	2011
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ... Applied Physics Letters 102 (24), 242115, 2013	148	2013
The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs (P) MQW semiconductor diode lasers SJ Sweeney, AF Phillips, AR Adams, EP O'reilly, PJA Thijs IEEE Photonics Technology Letters 10 (8), 1076-1078, 1998	123	1998
Carrier transport and recombination in -doped and intrinsic quantum-dot lasers IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ... Applied Physics Letters 87 (21), 211114, 2005	100	2005
Impact of alloy disorder on the band structure of compressively strained GaBi x As 1− x M Usman, CA Broderick, Z Batool, K Hild, TJC Hosea, SJ Sweeney, ... Physical Review B 87 (11), 115104, 2013	83	2013
Localization effects and band gap of GaAsBi alloys AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ... physica status solidi (b) 251 (6), 1276-1281, 2014	75	2014
The effect of Bi composition to the optical quality of GaAs1− xBix AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David Applied Physics Letters 99 (4), 042107, 2011	72	2011
Experimental analysis of temperature dependence in 1.3-/spl mu/m AlGaInAs-InP strained MQW lasers T Higashi, SJ Sweeney, AF Phillips, AR Adams, E O'Reilly, T Uchida, ... IEEE Journal of selected topics in quantum electronics 5 (3), 413-419, 1999	67	1999
Effects of rapid thermal annealing on GaAs_1-xBi_x alloys AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ... Applied Physics Letters 101 (1), 012106, 2012	66	2012
Recombination mechanisms and band alignment of GaAs_1−xBi_x/GaAs light emitting diodes N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ... Applied Physics Letters 100 (5), 051105, 2012	64	2012
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ... Optics letters 36 (21), 4158-4160, 2011	63	2011
Optical gain in GaAsBi/GaAs quantum well diode lasers SJS Igor P Marko, Christopher A Broderick, Shirong Jin, Peter Ludewig ... Scientific Reports 6, 28863, 2016	62*	2016
Dependence of threshold current on QW position and on pressure in 1.5 μm InGaAs (P) lasers SJ Sweeney, AR Adams, M Silver, EP O'Reilly, JR Watling, AB Walker, ... physica status solidi (b) 211 (1), 525-531, 1999	62	1999
Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi IP Marko, P Ludewig, ZL Bushell, SR Jin, K Hild, Z Batool, S Reinhard, ... Journal of Physics D: Applied Physics 47 (34), 345103, 2014	61	2014

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