Stephen J Sweeney
Stephen J Sweeney
Professor of Physics, University of Surrey
Email verificata su surrey.ac.uk - Home page
Titolo
Citata da
Citata da
Anno
The temperature dependence of 1.3-and 1.5-/spl mu/m compressively strained InGaAs (P) MQW semiconductor lasers
AF Phillips, SJ Sweeney, AR Adams, PJA Thijs
IEEE Journal of selected topics in quantum electronics 5 (3), 401-412, 1999
2291999
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
IEEE Journal of selected topics in quantum electronics 8 (4), 801-810, 2002
1902002
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje, SJ Sweeney
Journal of Applied Physics 111 (11), 113108, 2012
1822012
Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared
SJ Sweeney, SR Jin
Journal of applied physics 113 (4), 043110, 2013
1802013
Band engineering in dilute nitride and bismide semiconductor lasers
CA Broderick, M Usman, SJ Sweeney, EP O’Reilly
Semiconductor Science and Technology 27 (9), 094011, 2012
1632012
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003
1612003
Laser operation of Ga (NAsP) lattice-matched to (001) silicon substrate
S Liebich, M Zimprich, A Beyer, C Lange, DJ Franzbach, S Chatterjee, ...
Applied Physics Letters 99 (7), 071109, 2011
1562011
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser
P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ...
Applied Physics Letters 102 (24), 242115, 2013
1482013
The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs (P) MQW semiconductor diode lasers
SJ Sweeney, AF Phillips, AR Adams, EP O'reilly, PJA Thijs
IEEE Photonics Technology Letters 10 (8), 1076-1078, 1998
1231998
Carrier transport and recombination in -doped and intrinsic quantum-dot lasers
IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ...
Applied Physics Letters 87 (21), 211114, 2005
1002005
Impact of alloy disorder on the band structure of compressively strained GaBi x As 1− x
M Usman, CA Broderick, Z Batool, K Hild, TJC Hosea, SJ Sweeney, ...
Physical Review B 87 (11), 115104, 2013
832013
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
752014
The effect of Bi composition to the optical quality of GaAs1− xBix
AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 99 (4), 042107, 2011
722011
Experimental analysis of temperature dependence in 1.3-/spl mu/m AlGaInAs-InP strained MQW lasers
T Higashi, SJ Sweeney, AF Phillips, AR Adams, E O'Reilly, T Uchida, ...
IEEE Journal of selected topics in quantum electronics 5 (3), 413-419, 1999
671999
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ...
Applied Physics Letters 101 (1), 012106, 2012
662012
Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes
N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ...
Applied Physics Letters 100 (5), 051105, 2012
642012
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon
L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ...
Optics letters 36 (21), 4158-4160, 2011
632011
Optical gain in GaAsBi/GaAs quantum well diode lasers
SJS Igor P Marko, Christopher A Broderick, Shirong Jin, Peter Ludewig ...
Scientific Reports 6, 28863, 2016
62*2016
Dependence of threshold current on QW position and on pressure in 1.5 μm InGaAs (P) lasers
SJ Sweeney, AR Adams, M Silver, EP O'Reilly, JR Watling, AB Walker, ...
physica status solidi (b) 211 (1), 525-531, 1999
621999
Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
IP Marko, P Ludewig, ZL Bushell, SR Jin, K Hild, Z Batool, S Reinhard, ...
Journal of Physics D: Applied Physics 47 (34), 345103, 2014
612014
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
Articoli 1–20