Dr. Md. Tanvir Hasan
Dr. Md. Tanvir Hasan
Jashore University of Science and Technology (JUST)
Verified email at just.edu.bd
Cited by
Cited by
Current collapse suppression by gate field-plate in AlGaN/GaN HEMTs
MT Hasan, T Asano, H Tokuda, M Kuzuhara
IEEE Electron Device Letters 34 (11), 1379-1381, 2013
Detection of small variations of ECG features using Wavelet
AKMF Haque, MH Ali, MA Kiber, MT Hasan
ARPN Journal of Engineering and applied Sciences 4 (6), 27-30, 2009
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization
MT Hasan, AG Bhuiyan, A Yamamoto
Solid-State Electronics 52 (1), 134-139, 2008
High performance dual core D-shape PCF-SPR sensor modeling employing gold coat
MN Sakib, MB Hossain, KF Al-tabatabaie, IM Mehedi, MT Hasan, ...
Results in Physics 15, 102788, 2019
Numerical analysis and design of photonic crystal fiber based surface plasmon resonance biosensor
MB Hossain, MS Hossain, M Moznuzzaman, MA Hossain, ...
Journal of Sensor Technology 9 (2), 27-34, 2019
Phase separation of thick (∼ 1 m) InxGa1− xN (x∼ 0.3) grown on AlN/Si (111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN
A Yamamoto, MT Hasan, A Mihara, N Narita, N Shigekawa, M Kuzuhara
Applied Physics Express 7 (3), 035502, 2014
Design and performance of inxga1-xn-based mj solar cells
MR Islam, MT Hasan, AG Bhuiyan, MR Islam, A Yamamoto
IETECH Journal of Electrical Analysis 2 (4), 237-243, 2008
Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures
M Tanvir Hasan, H Tokuda, M Kuzuhara
Applied physics letters 99 (13), 132102, 2011
Performance evaluation of various vocoders in Mobile Ad hoc Network (MANET)
MS Islam, MN Islam, MS Alam, MA Riaz, MT Hasan
International Conference on Electrical & Computer Engineering (ICECE 2010…, 2010
Growth temperature dependent critical thickness for phase separation in thick (~ 1μm) In x Ga 1− x N (x= 0.2–0.4)
A Yamamoto, TM Hasan, K Kodama, N Shigekawa, M Kuzuhara
Journal of Crystal Growth 419, 64-68, 2015
Proposal of High Performance 1.55 m Quantum Dot Heterostructure Laser Using InN
MM Hossain, M Abdullah-Al Humayun, MT Hasan, AG Bhuiyan, ...
IEICE transactions on electronics 95 (2), 255-261, 2012
Mechanism and Suppression of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
MT Hasan
University of Fukui, 2013
Design and performance of 1.55 μm laser using InGaN
MT Hasan, MJ Islam, R Hasan, MS Islam, S Yeasmin, AG Bhuiyan, ...
physica status solidi c 7 (7‐8), 1825-1828, 2010
2DEG properties in InGaN/InN/InGaN‐based double channel HEMTs
MT Hasan, MR Kaysir, MS Islam, AG Bhuiyan, MR Islam, A Hashimoto, ...
physica status solidi c 7 (7‐8), 1997-2000, 2010
Effect of sputtered SiN passivation on current collapse of AlGaN/GaN HEMTs
MT Hasan, T Kojima, H Tokuda, M Kuzuhara
CS Mantech Conference, 131-134, 2013
Wideband Rectangular Patch Antenna for Wireless Applications
MN Islam, F Yasmine, SM Ismail, MT Hasan
National Conference on Communication and Information Security (NCCIS 2009…, 2009
GaN-based double gate MOSFETs: effect of gate length
S Ahmed, MIB Taher, MT Hasan, MS Islam
2016 IEEE Region 10 Conference (TENCON), 2334-2337, 2016
AlInN/InN metal oxide semiconductor heterostructure field effect transistor
MS Islam, SM Muhtadi, MT Hasan, AG Bhuiyan, MR Islam, A Hashimoto, ...
physica status solidi c 7 (7‐8), 1983-1987, 2010
GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function
IM Mehedi, AM Alshareef, MR Islam, MT Hasan
Journal of Computational Electronics 17 (2), 663-669, 2018
The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC
SA Amin, M Hasan, MS Islam
International Journal of Photoenergy 2017, 2017
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