| Current collapse suppression by gate field-plate in AlGaN/GaN HEMTs MT Hasan, T Asano, H Tokuda, M Kuzuhara IEEE Electron Device Letters 34 (11), 1379-1381, 2013 | 69 | 2013 |
| Detection of small variations of ECG features using Wavelet AKMF Haque, MH Ali, MA Kiber, MT Hasan ARPN Journal of Engineering and applied Sciences 4 (6), 27-30, 2009 | 62 | 2009 |
| Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization MT Hasan, AG Bhuiyan, A Yamamoto Solid-State Electronics 52 (1), 134-139, 2008 | 29 | 2008 |
| High performance dual core D-shape PCF-SPR sensor modeling employing gold coat MN Sakib, MB Hossain, KF Al-tabatabaie, IM Mehedi, MT Hasan, ... Results in Physics 15, 102788, 2019 | 21 | 2019 |
| Numerical analysis and design of photonic crystal fiber based surface plasmon resonance biosensor MB Hossain, MS Hossain, M Moznuzzaman, MA Hossain, ... Journal of Sensor Technology 9 (2), 27-34, 2019 | 15 | 2019 |
| Phase separation of thick (∼ 1 µm) InxGa1− xN (x∼ 0.3) grown on AlN/Si (111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN A Yamamoto, MT Hasan, A Mihara, N Narita, N Shigekawa, M Kuzuhara Applied Physics Express 7 (3), 035502, 2014 | 13 | 2014 |
| Design and performance of inxga1-xn-based mj solar cells MR Islam, MT Hasan, AG Bhuiyan, MR Islam, A Yamamoto IETECH Journal of Electrical Analysis 2 (4), 237-243, 2008 | 13 | 2008 |
| Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures M Tanvir Hasan, H Tokuda, M Kuzuhara Applied physics letters 99 (13), 132102, 2011 | 11 | 2011 |
| Performance evaluation of various vocoders in Mobile Ad hoc Network (MANET) MS Islam, MN Islam, MS Alam, MA Riaz, MT Hasan International Conference on Electrical & Computer Engineering (ICECE 2010 …, 2010 | 11 | 2010 |
| Growth temperature dependent critical thickness for phase separation in thick (~ 1μm) In x Ga 1− x N (x= 0.2–0.4) A Yamamoto, TM Hasan, K Kodama, N Shigekawa, M Kuzuhara Journal of Crystal Growth 419, 64-68, 2015 | 10 | 2015 |
| Proposal of High Performance 1.55 µm Quantum Dot Heterostructure Laser Using InN MM Hossain, M Abdullah-Al Humayun, MT Hasan, AG Bhuiyan, ... IEICE transactions on electronics 95 (2), 255-261, 2012 | 10 | 2012 |
| Mechanism and Suppression of Current Collapse in AlGaN/GaN High Electron Mobility Transistors MT Hasan University of Fukui, 2013 | 9 | 2013 |
| Design and performance of 1.55 μm laser using InGaN MT Hasan, MJ Islam, R Hasan, MS Islam, S Yeasmin, AG Bhuiyan, ... physica status solidi c 7 (7‐8), 1825-1828, 2010 | 9 | 2010 |
| 2DEG properties in InGaN/InN/InGaN‐based double channel HEMTs MT Hasan, MR Kaysir, MS Islam, AG Bhuiyan, MR Islam, A Hashimoto, ... physica status solidi c 7 (7‐8), 1997-2000, 2010 | 8 | 2010 |
| Effect of sputtered SiN passivation on current collapse of AlGaN/GaN HEMTs MT Hasan, T Kojima, H Tokuda, M Kuzuhara CS Mantech Conference, 131-134, 2013 | 7 | 2013 |
| Wideband Rectangular Patch Antenna for Wireless Applications MN Islam, F Yasmine, SM Ismail, MT Hasan National Conference on Communication and Information Security (NCCIS 2009 …, 2009 | 7 | 2009 |
| GaN-based double gate MOSFETs: effect of gate length S Ahmed, MIB Taher, MT Hasan, MS Islam 2016 IEEE Region 10 Conference (TENCON), 2334-2337, 2016 | 5 | 2016 |
| AlInN/InN metal oxide semiconductor heterostructure field effect transistor MS Islam, SM Muhtadi, MT Hasan, AG Bhuiyan, MR Islam, A Hashimoto, ... physica status solidi c 7 (7‐8), 1983-1987, 2010 | 5 | 2010 |
| GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function IM Mehedi, AM Alshareef, MR Islam, MT Hasan Journal of Computational Electronics 17 (2), 663-669, 2018 | 4 | 2018 |
| The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC SA Amin, M Hasan, MS Islam International Journal of Photoenergy 2017, 2017 | 4 | 2017 |
Akio YamamotoUniversity of FukuiVerified email at u-fukui.ac.jp
