Herwig Hahn
Herwig Hahn
AIXTRON SE
Email verificata su aixtron.com
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Citata da
Citata da
Anno
Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance
H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan
Applied Physics Express 4 (11), 114102, 2011
682011
The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ...
Semiconductor Science and Technology 29 (11), 115012, 2014
512014
Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces
B Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ...
Journal of Physics D: Applied Physics 47 (17), 175103, 2014
422014
p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
H Hahn, B Reuters, A Pooth, B Hollaender, M Heuken, H Kalisch, ...
Electron Devices, IEEE Transactions on 60 (10), 3005-3011, 2013
382013
Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers
B Reuters, A Wille, N Ketteniss, H Hahn, B Holländer, M Heuken, ...
Journal of Electronic Materials 42 (5), 826-832, 2013
382013
First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET
H Hahn, B Reuters, A Wille, N Ketteniss, F Benkhelifa, O Ambacher, ...
Semiconductor Science and Technology 27 (5), 055004, 2012
372012
Gallium phosphide-on-silicon dioxide photonic devices
K Schneider, P Welter, Y Baumgartner, H Hahn, L Czornomaz, P Seidler
Journal of Lightwave Technology 36 (14), 2994-3002, 2018
232018
Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V
H Hahn, F Benkhelifa, O Ambacher, F Brunner, A Noculak, H Kalisch, ...
IEEE Transactions on Electron Devices 62 (2), 538-545, 2014
232014
First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors
H Hahn, B Reuters, S Kotzea, G Lukens, S Geipel, H Kalisch, A Vescan
Device Research Conference (DRC), 2014 72nd Annual, 259-260, 2014
222014
AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal
H Hahn, B Reuters, H Kalisch, A Vescan
Semiconductor Science and Technology 28 (7), 074017, 2013
212013
GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm
H Hahn, F Benkhelifa, O Ambacher, A Alam, M Heuken, H Yacoub, ...
Japanese Journal of Applied Physics 52 (9R), 090204, 2013
192013
Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect …
H Hahn, B Reuters, S Geipel, M Schauerte, F Benkhelifa, O Ambacher, ...
Journal of Applied Physics 117 (10), 104508, 2015
162015
Monolithically Integrated CMOS-Compatible III–V on Silicon Lasers
M Seifried, G Villares, Y Baumgartner, H Hahn, M Halter, F Horst, D Caimi, ...
IEEE Journal of Selected Topics in Quantum Electronics 24 (6), 1-9, 2018
142018
Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs
G Lükens, H Hahn, H Kalisch, A Vescan
IEEE Transactions on Electron Devices 65 (9), 3732-3738, 2018
142018
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
H Hahn, V Deshpande, E Caruso, S Sant, E O’Connor, Y Baumgartner, ...
Electron Devices Meeting (IEDM), 2017 IEEE International, 2017
142017
First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts
V Deshpande, H Hahn, E O'Connor, Y Baumgartner, M Sousa, D Caimi, ...
VLSI Technology, 2017 Symposium on, T74-T75, 2017
142017
Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates
B Reuters, J Strate, H Hahn, M Finken, A Wille, M Heuken, H Kalisch, ...
Journal of Crystal Growth 391, 33-40, 2014
142014
Investigation of plasma-oxidized aluminium as a gate dielectric for AlGaN/GaN MISHFETs
H Hahn, A Alam, M Heuken, H Kalisch, A Vescan
Semiconductor Science and Technology 27 (6), 062001, 2012
142012
Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics
H Hahn, J Achenbach, N Ketteniss, A Noculak, H Kalisch, A Vescan
Solid-State Electronics 67 (1), 90-93, 2011
132011
The III-Nitride Double Heterostructure Revisited: Benefits for Threshold Voltage Engineering of MIS Devices
H Hahn, C Funck, S Geipel, H Kalisch, A Vescan
Electron Devices, IEEE Transactions on 63 (2), 606-613, 2016
122016
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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