| Spin-torque switching with the giant spin Hall effect of tantalum L Liu, CF Pai, Y Li, HW Tseng, DC Ralph, RA Buhrman Science 336 (6081), 555-558, 2012 | 4187 | 2012 |
| Spin transfer torque devices utilizing the giant spin Hall effect of tungsten CF Pai, L Liu, Y Li, HW Tseng, DC Ralph, RA Buhrman Applied Physics Letters 101 (12), 2012 | 1599 | 2012 |
| Spin transfer torque devices utilizing the giant spin Hall effect of tungsten CF Pai, L Liu, Y Li, HW Tseng, DC Ralph, RA Buhrman Applied Physics Letters 101 (12), 2012 | 1599 | 2012 |
| Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall effect OJ Lee, LQ Liu, CF Pai, Y Li, HW Tseng, PG Gowtham, JP Park, DC Ralph, ... Physical Review B 89 (2), 024418, 2014 | 309 | 2014 |
| Atomic-scale spectroscopic imaging of CoFeB/Mg–B–O/CoFeB magnetic tunnel junctions JJ Cha, JC Read, WF Egelhoff, PY Huang, HW Tseng, Y Li, RA Buhrman, ... Applied Physics Letters 95 (3), 2009 | 60 | 2009 |
| Bottom pinned SOT-MRAM bit structure and method of fabrication PM Braganca, H Tseng, L Wan US Patent 9,768,229, 2017 | 36 | 2017 |
| High magnetoresistance tunnel junctions with Mg–B–O barriers and Ni–Fe–B free electrodes JC Read, JJ Cha, WF Egelhoff, HW Tseng, PY Huang, Y Li, DA Muller, ... Applied Physics Letters 94 (11), 2009 | 30 | 2009 |
| Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation EA Montoya, JR Chen, R Ngelale, HK Lee, HW Tseng, L Wan, E Yang, ... Scientific reports 10 (1), 10220, 2020 | 25 | 2020 |
| Process optimization of perpendicular magnetic tunnel junction arrays for last-level cache beyond 7 nm node L Xue, C Ching, A Kontos, J Ahn, X Wang, R Whig, H Tseng, J Howarth, ... 2018 IEEE Symposium on VLSI Technology, 117-118, 2018 | 20 | 2018 |
| Improvement of the low-frequency sensitivity of MgO-based magnetic tunnel junctions by annealing H Duan, HW Tseng, Y Li, RB van Dover Journal of Applied Physics 109 (11), 2011 | 10 | 2011 |
| Bottom pinned SOT-MRAM bit structure and method of fabrication PM Braganca, H Tseng, L Wan US Patent 10,490,601, 2019 | 9 | 2019 |
| Spin orbit torque MRAM and manufacture thereof AHN Jaesoo, C Park, H Tseng, XUE Lin, M Pakala US Patent 10,756,259, 2020 | 7 | 2020 |
| Enhanced signal-to-noise ratio in current-perpendicular-to-plane giant-magnetoresistance sensors by suppression of spin-torque effects G Mihajlović, TM Nakatani, N Smith, JC Read, YS Choi, HW Tseng, ... IEEE Magnetics Letters 6, 1-4, 2015 | 7 | 2015 |
| Methods for forming structures for MRAM applications AHN Jaesoo, H Tseng, XUE Lin, M Pakala US Patent 10,497,858, 2019 | 4 | 2019 |
| Enabling STT-MRAM in high volume manufacturing for LLC applications R Whig, C Ching, X Wang, P Agrawal, D Kim, R Wang, J Lei, R Zheng, ... 2019 IEEE 11th International Memory Workshop (IMW), 1-3, 2019 | 4 | 2019 |
| Spin transfer torque devices utilizing the spin Hall effect of tungsten CF Pai, L Liu, Y Li, HW Tseng, DC Ralph, RA Buhrman Bulletin of the American Physical Society 58, 2013 | 3 | 2013 |
| Interface and oxide quality of CoFeB/MgO/Si tunnel junctions JT Shaw, HW Tseng, S Rajwade, LT Tung, RA Buhrman, EC Kan Journal of Applied Physics 111 (9), 2012 | 2 | 2012 |
| Methods to form top contact to a magnetic tunnel junction XUE Lin, AHN Jaesoo, H Tseng, M Pakala US Patent 11,374,170, 2022 | 1 | 2022 |
| Back end memory integration process H Tseng, M Pakala, XUE Lin, AHN Jaesoo, SA HASSAN US Patent 11,239,086, 2022 | 1 | 2022 |
| Methods for forming structures for MRAM applications H Tseng, C Park, AHN Jaesoo, XUE Lin, M Pakala US Patent 11,069,853, 2021 | 1 | 2021 |
