Enxia Zhang
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Process dependence of proton-induced degradation in GaN HEMTs
T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ...
IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010
792010
Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs
J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013
782013
Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs
F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ...
IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009
762009
Laser-and heavy ion-induced charge collection in bulk FinFETs
F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011
672011
Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices
EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ...
IEEE transactions on nuclear science 58 (6), 2961-2967, 2011
662011
Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors
YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011
632011
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
562015
Impact of proton irradiation on deep level states in n-GaN
Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 103 (4), 042102, 2013
522013
Effectiveness of SEL hardening strategies and the latchup domino effect
NA Dodds, NC Hooten, RA Reed, RD Schrimpf, JH Warner, NJH Roche, ...
IEEE Transactions on Nuclear Science 59 (6), 2642-2650, 2012
522012
Ozone-exposure and annealing effects on graphene-on-SiO2 transistors
EX Zhang, AKM Newaz, B Wang, CX Zhang, DM Fleetwood, KI Bolotin, ...
Applied physics letters 101 (12), 121601, 2012
522012
Effect of transistor density and charge sharing on single-event transients in 90-nm bulk CMOS
NM Atkinson, JR Ahlbin, AF Witulski, NJ Gaspard, WT Holman, BL Bhuva, ...
IEEE Transactions on Nuclear Science 58 (6), 2578-2584, 2011
522011
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017
502017
Heavy-ion-induced current transients in bulk and SOI FinFETs
F El-Mamouni, EX Zhang, DR Ball, B Sierawski, MP King, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 59 (6), 2674-2681, 2012
472012
The Impact of X-Ray and Proton Irradiation on -Based Bipolar Resistive Memories
JS Bi, ZS Han, EX Zhang, MW McCurdy, RA Reed, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4540-4546, 2013
442013
Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs
GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014
422014
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ...
Applied Physics Letters 99 (20), 203501, 2011
422011
Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applications
NE Ives, J Chen, AF Witulski, RD Schrimpf, DM Fleetwood, RW Bruce, ...
IEEE Transactions on Nuclear Science 62 (6), 2417-2422, 2015
412015
Total-ionizing-dose radiation effects in AlGaN/GaN HEMTs and MOS-HEMTs
X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4074-4079, 2013
412013
Single- and Multiple-Event Induced Upsets in 1T1R RRAM
WG Bennett, NC Hooten, RD Schrimpf, RA Reed, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 61 (4), 1717-1725, 2014
392014
Atomic-scale origins of bias-temperature instabilities in structures
X Shen, EX Zhang, CX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, ...
Applied Physics Letters 98 (6), 063507, 2011
392011
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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