Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
123 2019 RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
50 2020 Pulsed Power Performance of β -Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
38 2020 Toward high voltage radio frequency devices in β-Ga2O3 N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ...
Applied Physics Letters 117 (24), 2020
30 2020 Self-Heating Characterization of -Ga2 O3 Thin-Channel MOSFETs by Pulsed – and Raman Nanothermography NA Blumenschein, NA Moser, ER Heller, NC Miller, AJ Green, A Popp, ...
IEEE Transactions on Electron Devices 67 (1), 204-211, 2019
29 2019 W -Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHzJS Moon, B Grabar, J Wong, C Dao, E Arkun, H Tai, D Fanning, NC Miller, ...
IEEE Microwave and Wireless Technology Letters 33 (2), 161-164, 2022
21 2022 A discontinuous Galerkin time domain framework for periodic structures subject to oblique excitation NC Miller, AD Baczewski, JD Albrecht, B Shanker
IEEE transactions on antennas and propagation 62 (8), 4386-4391, 2014
16 2014 Accurate nonlinear GaN HEMT simulations from X-to Ka-band using a single ASM-HEMT model NC Miller, NA Moser, RC Fitch, JK Gillespie, KJ Liddy, DE Walker, ...
2021 IEEE 21st Annual Wireless and Microwave Technology Conference (WAMICON …, 2021
14 2021 Deep learning-based ASM-HEMT IV parameter extraction F Chavez, DT Davis, NC Miller, S Khandelwal
IEEE Electron Device Letters 43 (10), 1633-1636, 2022
10 2022 Accurate non-linear harmonic simulations at X-band using the ASM-HEMT model validated with NVNA measurements NC Miller, DT Davis, S Khandelwal, F Sischka, R Gilbert, M Elliott, ...
2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and …, 2022
10 2022 Rapid analysis of scattering from periodic dielectric structures using accelerated Cartesian expansions AD Baczewski, NC Miller, B Shanker
JOSA A 29 (4), 531-540, 2012
10 2012 Computational study of Fermi kinetics transport applied to large-signal RF device simulations NC Miller, M Grupen, K Beckwith, D Smithe, JD Albrecht
Journal of Computational Electronics, 1-18, 2018
7 2018 Experimentally validated gate-lag simulations of AlGaN/GaN HEMTs using Fermi kinetics transport NC Miller, M Grupen, AE Islam, JD Albrecht, D Frey, R Young, M Lindquist, ...
IEEE Transactions on Electron Devices 70 (2), 435-442, 2022
6 2022 Delaunay–Voronoi surface integration: a full‐wave electromagnetics discretization for electronic device simulation NC Miller, JD Albrecht, M Grupen
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016
6 2016 A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs A Tunga, K Li, E White, NC Miller, M Grupen, JD Albrecht, S Rakheja
Journal of Applied Physics 132 (22), 2022
5 2022 Surmounting W-band scalar load-pull limitations using the ASM-HEMT model for millimeter-wave GaN HEMT technology large-signal assessment NC Miller, M Elliott, R Gilbert, E Arkun, DJ Denninghoff
2022 99th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2022
5 2022 ASM-HEMT Embedding Model for Accelerated Design of PAs M Lindquist, P Roblin, NC Miller
2021 XXXIVth General Assembly and Scientific Symposium of the International …, 2021
5 2021 Large-signal RF GaN HEMT simulation using Fermi kinetics transport NC Miller, JD Albrecht, M Grupen
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
5 2016 Statistical modeling of manufacturing variability in GaN HEMT IV characteristics with ASM-HEMT F Chavez, NC Miller, DT Davis, S Khandelwal
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 375-377, 2022
4 2022 Large-signal RF simulation and characterization of electronic devices using Fermi kinetics transport NC Miller
Michigan State University, 2017
4 2017