Quazi  D. M. Khosru
Quazi D. M. Khosru
Verified email at eee.buet.ac.bd - Homepage
TitleCited byYear
-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability
A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama
Applied Physics Letters 80 (7), 1252-1254, 2002
1142002
Rapid, low cost prototyping of transdermal devices for personal healthcare monitoring
S Sharma, A Saeed, C Johnson, N Gadegaard, AEG Cass
Sensing and Bio-Sensing Research 13, 104-108, 2017
59*2017
Soft breakdown free atomic-layer-deposited silicon-nitride/SiO/sub 2/stack gate dielectrics
A Nakajima, QDM Khosru, T Yoshirnoto, T Kidera, S Yokoyama
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
372001
Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors
T Matsuoka, S Taguchi, QDM Khosru, K Taniguchi, C Hamaguchi
Journal of applied physics 78 (5), 3252-3257, 1995
301995
Soft Breakdown Free Atomic-Layer-Deposited Silicon-Nitride/SiO~ 2 Stack Gate Dielectrics
A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama
INTERNATIONAL ELECTRON DEVICES MEETING 1 (1), 133-136, 1998
291998
Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure
QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Journal of applied physics 77 (9), 4494-4503, 1995
271995
Spatial distribution of trapped holes in SiO2
QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Journal of applied physics 76 (8), 4738-4742, 1994
261994
Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology
A Nakajima, QDM Khosru, T Yoshimoto, S Yokoyama
Microelectronics Reliability 42 (12), 1823-1835, 2002
252002
Oxide thickness dependence of interface trap generation in a metal‐oxide‐semiconductor structure during substrate hot‐hole injection
QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Applied physics letters 63 (18), 2537-2539, 1993
211993
Parametrization of a silicon nanowire effective mass model from sp3d5s* orbital basis calculations
RN Sajjad, K Alam, QDM Khosru
Semiconductor Science and Technology 24 (4), 045023, 2009
202009
Structural, dielectric and magnetic properties of Ta-substituted Bi0. 8La0. 2FeO3 multiferroics
T Fakhrul, R Mahbub, N Chowdhury, QDM Khosru, A Sharif
Journal Of Alloys And Compounds 622, 471-476, 2015
152015
Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor
SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, ...
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015
142015
Spatial distribution of trapped holes in the oxide of metal oxide semiconductor field-effect transistors after uniform hot-hole injection
QDM Khosru, N Yasuda, A Maruyama, K Taniguchi, C Hamaguchi
Japanese journal of applied physics 30 (12S), 3652, 1991
131991
Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor …
A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
122002
Inversion layer effective mobility model for pocket implanted nano scale n-MOSFET
MH Bhuyan, QDM Khosru
International Journal of Electrical and Electronics Engineering 5 (1), 1-8, 2011
112011
Linear pocket profile based threshold voltage model for sub-100 nm n-MOSFET
MH Bhuyan, QDM Khosru
International Journal of Electrical and Computer Engineering 5 (5), 310-315, 2010
112010
Reliable extraction of the energy distribution of interface traps in ultrathin metal–oxide–semiconductor structures
QDM Khosru, A Nakajima, T Yoshimoto, S Yokoyama
Applied physics letters 80 (21), 3952-3954, 2002
112002
Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics
A Nakajima, QDM Khosru, T Kasai, S Yokoyama
IEEE Electron Device Letters 24 (7), 472-474, 2003
102003
High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps
A Nakajima, QDM Khosru, T Yoshimoto, T Kasai, S Yokoyama
Applied physics letters 83 (2), 335-337, 2003
102003
Effect of biomolecule position and fill in factor on sensitivity of a Dielectric Modulated Double Gate Junctionless MOSFET biosensor
E Rahman, A Shadman, QDM Khosru
Sensing and Bio-Sensing Research 13, 49-54, 2017
92017
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