| Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ... Acta Materialia 61 (3), 945-951, 2013 | 466 | 2013 |
| Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ... Applied Physics Letters 100 (20), 2012 | 216 | 2012 |
| Phosphorous diffuser diverged blue laser diode for indoor lighting and communication YC Chi, DH Hsieh, CY Lin, HY Chen, CY Huang, JH He, B Ooi, ... Scientific reports 5 (1), 1-9, 2015 | 160 | 2015 |
| AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ... Applied Physics Express 3 (1), 011002, 2009 | 120 | 2009 |
| High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ... Applied physics letters 99 (5), 2011 | 98 | 2011 |
| High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes YD Lin, S Yamamoto, CY Huang, CL Hsiung, F Wu, K Fujito, H Ohta, ... Applied Physics Express 3 (8), 082001, 2010 | 95 | 2010 |
| Optical waveguide simulations for the optimization of InGaN-based green laser diodes CY Huang, YD Lin, A Tyagi, A Chakraborty, H Ohta, JS Speck, ... Journal of Applied Physics 107 (2), 2010 | 83 | 2010 |
| Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ... Applied physics express 2 (8), 082102, 2009 | 78 | 2009 |
| Influence of polarity on carrier transport in semipolar (2021) and (202 1) multiple-quantum-well light-emitting diodes Y Kawaguchi, CY Huang, YR Wu, Q Yan, CC Pan, Y Zhao, S Tanaka, ... Applied Physics Letters 100 (23), 2012 | 67 | 2012 |
| Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ... Applied Physics Express 2 (7), 071003, 2009 | 60 | 2009 |
| Non-polar m-plane intersubband based InGaN/(Al) GaN quantum well infrared photodetectors A Pesach, E Gross, CY Huang, YD Lin, A Vardi, SE Schacham, ... Applied physics letters 103 (2), 2013 | 53 | 2013 |
| Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ... Applied Physics Letters 99 (24), 2011 | 53 | 2011 |
| High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes CY Huang, PY Wu, KS Chang, YH Lin, WC Peng, YY Chang, JP Li, ... Aip Advances 7 (5), 2017 | 51 | 2017 |
| Semipolar iii-nitride laser diodes with etched mirrors A Tyagi, RM Farrell, CY Huang, PS Hsu, DA Haeger, KM Kelchner, ... US Patent App. 12/908,478, 2011 | 42 | 2011 |
| Semipolar (2021) single-quantum-well red light-emitting diodes with a low forward voltage Y Kawaguchi, CY Huang, YR Wu, Y Zhao, SP DenBaars, S Nakamura Japanese Journal of Applied Physics 52 (8S), 08JC08, 2013 | 37 | 2013 |
| Suppressing void defects in long wavelength semipolar (202¯ 1¯) InGaN quantum wells by growth rate optimization Y Zhao, F Wu, CY Huang, Y Kawaguchi, S Tanaka, K Fujito, JS Speck, ... Applied Physics Letters 102 (9), 2013 | 30 | 2013 |
| Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes MT Hardy, F Wu, CY Huang, Y Zhao, DF Feezell, S Nakamura, JS Speck, ... IEEE Photonics Technology Letters 26 (1), 43-46, 2013 | 25 | 2013 |
| Influence of Mg-doped barriers on semipolar (202¯ 1) multiple-quantum-well green light-emitting diodes CY Huang, Q Yan, Y Zhao, K Fujito, D Feezell, CG Van de Walle, ... Applied Physics Letters 99 (14), 2011 | 24 | 2011 |
| m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers YD Lin, CY Huang, MT Hardy, PS Hsu, K Fujito, A Chakraborty, H Ohta, ... Applied Physics Letters 95 (8), 2009 | 24 | 2009 |
| Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates CY Huang, S Walde, CL Tsai, C Netzel, HH Liu, S Hagedorn, YR Wu, ... Japanese journal of applied physics 59 (7), 070904, 2020 | 17 | 2020 |
